Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 18

SI7964DP-T1-GE3

Wahanga Tapeke: 2820

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

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Vishay Siliconix

SIA778DJ-T1-GE3

Wahanga Tapeke: 103692

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, 1.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIF902EDZ-T1-E3

Wahanga Tapeke: 2784

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI5905BDC-T1-GE3

Wahanga Tapeke: 3293

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI7911DN-T1-E3

Wahanga Tapeke: 2776

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI8901EDB-T2-E1

Wahanga Tapeke: 2810

Momo FET: 2 P-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Vgs (th) (Max) @ Id: 1V @ 350µA,

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Vishay Siliconix

SI7948DP-T1-GE3

Wahanga Tapeke: 3297

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 4.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIA911DJ-T1-E3

Wahanga Tapeke: 2797

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SI6928DQ-T1-E3

Wahanga Tapeke: 2806

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

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Vishay Siliconix

SIA914ADJ-T1-GE3

Wahanga Tapeke: 101260

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

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Vishay Siliconix

SI3529DV-T1-E3

Wahanga Tapeke: 2823

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 1.95A, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4834BDY-T1-GE3

Wahanga Tapeke: 2808

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SI4569DY-T1-E3

Wahanga Tapeke: 2765

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, 7.9A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Momotae

Vishay Siliconix

SI5915DC-T1-GE3

Wahanga Tapeke: 2892

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

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Vishay Siliconix

SI7925DN-T1-GE3

Wahanga Tapeke: 2863

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SIZ700DT-T1-GE3

Wahanga Tapeke: 110609

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A, Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae

Vishay Siliconix

SI3588DV-T1-GE3

Wahanga Tapeke: 2780

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 570mA, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Momotae

Vishay Siliconix

SI7540DP-T1-E3

Wahanga Tapeke: 2781

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, 5.7A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae

Vishay Siliconix

SI4562DY-T1-GE3

Wahanga Tapeke: 2828

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae

Vishay Siliconix

SQJ962EP-T1-GE3

Wahanga Tapeke: 3339

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae

Vishay Siliconix

SI4562DY-T1-E3

Wahanga Tapeke: 2860

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae

Vishay Siliconix

SI3983DV-T1-E3

Wahanga Tapeke: 2699

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Momotae

Vishay Siliconix

SIA913DJ-T1-GE3

Wahanga Tapeke: 2844

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI3983DV-T1-GE3

Wahanga Tapeke: 2859

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Momotae

Vishay Siliconix

SI5515DC-T1-E3

Wahanga Tapeke: 153398

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, 3A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI1557DH-T1-E3

Wahanga Tapeke: 2849

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.2A, 770mA, Rds Kei (Max) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae

Vishay Siliconix

VQ1006P

Wahanga Tapeke: 2955

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 90V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA, Rds Kei (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Vishay Siliconix

SIA513DJ-T1-GE3

Wahanga Tapeke: 2783

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae

Vishay Siliconix

VQ3001P-E3

Wahanga Tapeke: 2909

Momo FET: 2 N and 2 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 850mA, 600mA, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Vishay Siliconix

SI7946DP-T1-E3

Wahanga Tapeke: 2803

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.1A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Vishay Siliconix

SI4952DY-T1-E3

Wahanga Tapeke: 3283

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae

Vishay Siliconix

SIF912EDZ-T1-E3

Wahanga Tapeke: 3336

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae

Vishay Siliconix

SI4501ADY-T1-GE3

Wahanga Tapeke: 2879

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, 4.1A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

Momotae

Vishay Siliconix

SI1958DH-T1-E3

Wahanga Tapeke: 2701

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 205 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae

Vishay Siliconix

SI4908DY-T1-E3

Wahanga Tapeke: 2706

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.1A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae

Vishay Siliconix

SI4947ADY-T1-E3

Wahanga Tapeke: 2709

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Momotae