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Transistors - FETs, MOSFETs - Huinga

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  • Transistors - FETs, MOSFETs - Huinga
SI5513CDC-T1-E3
Vishay Siliconix

SI5513CDC-T1-E3

Wahanga Tapeke: 128739

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, 3.7A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SI4286DY-T1-GE3
Vishay Siliconix

SI4286DY-T1-GE3

Wahanga Tapeke: 153479

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 32.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SQ4946AEY-T1_GE3
Vishay Siliconix

SQ4946AEY-T1_GE3

Wahanga Tapeke: 121475

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SIB900EDK-T1-GE3
Vishay Siliconix

SIB900EDK-T1-GE3

Wahanga Tapeke: 148740

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI5515CDC-T1-E3
Vishay Siliconix

SI5515CDC-T1-E3

Wahanga Tapeke: 195955

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

Momotae
SQ3585EV-T1_GE3
Vishay Siliconix

SQ3585EV-T1_GE3

Wahanga Tapeke: 2632

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.57A (Tc), 2.5A (Tc), Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 1A, 4.5V, 166 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SI1922EDH-T1-GE3
Vishay Siliconix

SI1922EDH-T1-GE3

Wahanga Tapeke: 148911

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 198 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI7212DN-T1-GE3
Vishay Siliconix

SI7212DN-T1-GE3

Wahanga Tapeke: 141942

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae
SQS966ENW-T1_GE3
Vishay Siliconix

SQS966ENW-T1_GE3

Wahanga Tapeke: 2544

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 1.25A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI1016CX-T1-GE3
Vishay Siliconix

SI1016CX-T1-GE3

Wahanga Tapeke: 151464

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 396 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI1965DH-T1-GE3
Vishay Siliconix

SI1965DH-T1-GE3

Wahanga Tapeke: 150223

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI1016X-T1-GE3
Vishay Siliconix

SI1016X-T1-GE3

Wahanga Tapeke: 135127

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 485mA, 370mA, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI6926ADQ-T1-E3
Vishay Siliconix

SI6926ADQ-T1-E3

Wahanga Tapeke: 129467

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI1023CX-T1-GE3
Vishay Siliconix

SI1023CX-T1-GE3

Wahanga Tapeke: 136072

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 756 mOhm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SQ3989EV-T1_GE3
Vishay Siliconix

SQ3989EV-T1_GE3

Wahanga Tapeke: 124228

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Rds Kei (Max) @ Id, Vgs: 155 mOhm @ 400mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SI4670DY-T1-GE3
Vishay Siliconix

SI4670DY-T1-GE3

Wahanga Tapeke: 139899

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae
SIZ300DT-T1-GE3
Vishay Siliconix

SIZ300DT-T1-GE3

Wahanga Tapeke: 146800

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, 28A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 9.8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Momotae
SI7540ADP-T1-GE3
Vishay Siliconix

SI7540ADP-T1-GE3

Wahanga Tapeke: 87195

Momo FET: N and P-Channel, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 9A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SI4943CDY-T1-E3
Vishay Siliconix

SI4943CDY-T1-E3

Wahanga Tapeke: 89694

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae
SQJ992EP-T1_GE3
Vishay Siliconix

SQJ992EP-T1_GE3

Wahanga Tapeke: 130455

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 56.2 mOhm @ 3.7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SQJ570EP-T1_GE3
Vishay Siliconix

SQJ570EP-T1_GE3

Wahanga Tapeke: 165202

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), 9.5A (Tc), Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V, 146 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI5902BDC-T1-GE3
Vishay Siliconix

SI5902BDC-T1-GE3

Wahanga Tapeke: 125173

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae
SQ1539EH-T1_GE3
Vishay Siliconix

SQ1539EH-T1_GE3

Wahanga Tapeke: 2491

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 850mA (Tc), Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 1A, 10V, 940 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

Momotae
SIA929DJ-T1-GE3
Vishay Siliconix

SIA929DJ-T1-GE3

Wahanga Tapeke: 141982

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Momotae
SQJB60EP-T1_GE3
Vishay Siliconix

SQJB60EP-T1_GE3

Wahanga Tapeke: 152496

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI4501BDY-T1-GE3
Vishay Siliconix

SI4501BDY-T1-GE3

Wahanga Tapeke: 198146

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 8A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Momotae
SIA910EDJ-T1-GE3
Vishay Siliconix

SIA910EDJ-T1-GE3

Wahanga Tapeke: 151991

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 5.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SIA923EDJ-T1-GE3
Vishay Siliconix

SIA923EDJ-T1-GE3

Wahanga Tapeke: 115135

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Momotae
SI5935CDC-T1-E3
Vishay Siliconix

SI5935CDC-T1-E3

Wahanga Tapeke: 110303

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae
SI3900DV-T1-E3
Vishay Siliconix

SI3900DV-T1-E3

Wahanga Tapeke: 118197

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SQ4961EY-T1_GE3
Vishay Siliconix

SQ4961EY-T1_GE3

Wahanga Tapeke: 110087

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Tc), Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SQJ204EP-T1_GE3
Vishay Siliconix

SQJ204EP-T1_GE3

Wahanga Tapeke: 2534

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds Kei (Max) @ Id, Vgs: 8.3 mOhm @ 4A, 10V, 3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae
SI4948BEY-T1-E3
Vishay Siliconix

SI4948BEY-T1-E3

Wahanga Tapeke: 125210

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.4A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae
SQJ952EP-T1_GE3
Vishay Siliconix

SQJ952EP-T1_GE3

Wahanga Tapeke: 158569

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 10.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae
SI4599DY-T1-GE3
Vishay Siliconix

SI4599DY-T1-GE3

Wahanga Tapeke: 199648

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A, 5.8A, Rds Kei (Max) @ Id, Vgs: 35.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae
SI7236DP-T1-GE3
Vishay Siliconix

SI7236DP-T1-GE3

Wahanga Tapeke: 45582

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Momotae