Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 18

SI9934BDY-T1-GE3

Wahanga Tapeke: 2797

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

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Vishay Siliconix

SI3951DV-T1-E3

Wahanga Tapeke: 2720

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

VQ1001P

Wahanga Tapeke: 2888

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 830mA, Rds Kei (Max) @ Id, Vgs: 1.75 Ohm @ 200mA, 5V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

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Vishay Siliconix

SI6955ADQ-T1-GE3

Wahanga Tapeke: 3376

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI7983DP-T1-E3

Wahanga Tapeke: 2716

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 600µA,

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Vishay Siliconix

SI8904EDB-T2-E1

Wahanga Tapeke: 2770

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

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Vishay Siliconix

SI4511DY-T1-GE3

Wahanga Tapeke: 2835

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A, 4.6A, Rds Kei (Max) @ Id, Vgs: 14.5 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

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Vishay Siliconix

SI4814BDY-T1-GE3

Wahanga Tapeke: 2891

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, 10.5A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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Vishay Siliconix

SIZ998DT-T1-GE3

Wahanga Tapeke: 24358

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), 60A (Tc), Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 15A, 10V, 2.8 mOhm @ 19A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

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Vishay Siliconix

SIA917DJ-T1-GE3

Wahanga Tapeke: 2760

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI5504DC-T1-E3

Wahanga Tapeke: 2750

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 2.1A, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

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Vishay Siliconix

SI4966DY-T1-GE3

Wahanga Tapeke: 70490

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

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Vishay Siliconix

SI1970DH-T1-E3

Wahanga Tapeke: 2698

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae

Vishay Siliconix

SI5943DU-T1-E3

Wahanga Tapeke: 2795

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI1035X-T1-GE3

Wahanga Tapeke: 103062

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180mA, 145mA, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 400mV @ 250µA (Min),

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Vishay Siliconix

SI9936BDY-T1-E3

Wahanga Tapeke: 2912

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI3911DV-T1-E3

Wahanga Tapeke: 2792

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

Momotae

Vishay Siliconix

SI4565ADY-T1-E3

Wahanga Tapeke: 2757

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, 5.6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Momotae

Vishay Siliconix

SI7945DP-T1-GE3

Wahanga Tapeke: 2809

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 10.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI6993DQ-T1-GE3

Wahanga Tapeke: 2801

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI5905BDC-T1-E3

Wahanga Tapeke: 2802

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI5943DU-T1-GE3

Wahanga Tapeke: 3377

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 64 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI5935DC-T1-GE3

Wahanga Tapeke: 2861

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 86 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI3586DV-T1-GE3

Wahanga Tapeke: 2865

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 2.1A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

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Vishay Siliconix

SIA511DJ-T1-GE3

Wahanga Tapeke: 2748

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SI1970DH-T1-GE3

Wahanga Tapeke: 3345

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Momotae

Vishay Siliconix

SI7911DN-T1-GE3

Wahanga Tapeke: 3351

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.2A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SIA914DJ-T1-E3

Wahanga Tapeke: 2809

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Momotae

Vishay Siliconix

SQJ940EP-T1_GE3

Wahanga Tapeke: 137151

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), 18A (Tc), Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae

Vishay Siliconix

SI4804BDY-T1-E3

Wahanga Tapeke: 2731

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI1025X-T1-E3

Wahanga Tapeke: 2759

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 190mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI1033X-T1-E3

Wahanga Tapeke: 2716

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 145mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Momotae

Vishay Siliconix

SI4544DY-T1-E3

Wahanga Tapeke: 2827

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Momotae

Vishay Siliconix

SIS902DN-T1-GE3

Wahanga Tapeke: 5353

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 186 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Momotae

Vishay Siliconix

SI4830ADY-T1-GE3

Wahanga Tapeke: 2864

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Momotae

Vishay Siliconix

SI5504DC-T1-GE3

Wahanga Tapeke: 2847

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, 2.1A, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Momotae