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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SFP9640
ON Semiconductor

SFP9640

Wahanga Tapeke: 791

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 5.5A, 10V,

Momotae
FDD45AN06LA0
ON Semiconductor

FDD45AN06LA0

Wahanga Tapeke: 656

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V,

Momotae
FQB8N60CFTM
ON Semiconductor

FQB8N60CFTM

Wahanga Tapeke: 611

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 3.13A, 10V,

Momotae
NTLJS3180PZTBG
ON Semiconductor

NTLJS3180PZTBG

Wahanga Tapeke: 696

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 3A, 4.5V,

Momotae
FDU8796_F071
ON Semiconductor

FDU8796_F071

Wahanga Tapeke: 680

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V,

Momotae
NIF9N05CLT1G
ON Semiconductor

NIF9N05CLT1G

Wahanga Tapeke: 6129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 59V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 3V, 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V,

Momotae
FDD6776A
ON Semiconductor

FDD6776A

Wahanga Tapeke: 641

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.7A (Ta), 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 17.7A, 10V,

Momotae
PCP1302-TD-H
ON Semiconductor

PCP1302-TD-H

Wahanga Tapeke: 148092

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 266 mOhm @ 1.5A, 10V,

Momotae
IRFM220BTF_FP001
ON Semiconductor

IRFM220BTF_FP001

Wahanga Tapeke: 737

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 570mA, 10V,

Momotae
NTMS4503NR2G
ON Semiconductor

NTMS4503NR2G

Wahanga Tapeke: 839

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 28V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V,

Momotae
FQB4N20TM
ON Semiconductor

FQB4N20TM

Wahanga Tapeke: 588

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 1.8A, 10V,

Momotae
NTR3162PT1G
ON Semiconductor

NTR3162PT1G

Wahanga Tapeke: 677

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V,

Momotae
NTD5803NT4G
ON Semiconductor

NTD5803NT4G

Wahanga Tapeke: 698

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 10V,

Momotae
FQA28N15_F109
ON Semiconductor

FQA28N15_F109

Wahanga Tapeke: 595

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V,

Momotae
SFM9014TF
ON Semiconductor

SFM9014TF

Wahanga Tapeke: 711

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 900mA, 10V,

Momotae
NDS8435A
ON Semiconductor

NDS8435A

Wahanga Tapeke: 6066

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 10V,

Momotae
NTMFS4120NT1G
ON Semiconductor

NTMFS4120NT1G

Wahanga Tapeke: 850

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 26A, 10V,

Momotae
FDA79N15
ON Semiconductor

FDA79N15

Wahanga Tapeke: 626

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 79A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 39.5A, 10V,

Momotae
FQD8P10TF_NB82052
ON Semiconductor

FQD8P10TF_NB82052

Wahanga Tapeke: 679

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V,

Momotae
NDT451AN_J23Z
ON Semiconductor

NDT451AN_J23Z

Wahanga Tapeke: 648

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 7.2A, 10V,

Momotae
FDS3670
ON Semiconductor

FDS3670

Wahanga Tapeke: 604

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6.3A, 10V,

Momotae
FDD5N50TF_WS
ON Semiconductor

FDD5N50TF_WS

Wahanga Tapeke: 562

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V,

Momotae
NTD4865N-1G
ON Semiconductor

NTD4865N-1G

Wahanga Tapeke: 696

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Ta), 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V,

Momotae
IRFS644B_FP001
ON Semiconductor

IRFS644B_FP001

Wahanga Tapeke: 713

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 7A, 10V,

Momotae
IRF620B_FP001
ON Semiconductor

IRF620B_FP001

Wahanga Tapeke: 784

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V,

Momotae
FDP5680
ON Semiconductor

FDP5680

Wahanga Tapeke: 579

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V,

Momotae
FQB55N10TM
ON Semiconductor

FQB55N10TM

Wahanga Tapeke: 62318

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 27.5A, 10V,

Momotae
NTMFS4851NT1G
ON Semiconductor

NTMFS4851NT1G

Wahanga Tapeke: 620

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Ta), 66A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V,

Momotae
FDV304P_NB8U003
ON Semiconductor

FDV304P_NB8U003

Wahanga Tapeke: 597

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 460mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.7V, 4.5V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V,

Momotae
FDC796N_F077
ON Semiconductor

FDC796N_F077

Wahanga Tapeke: 6123

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V,

Momotae
FQPF12P20YDTU
ON Semiconductor

FQPF12P20YDTU

Wahanga Tapeke: 646

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 470 mOhm @ 3.65A, 10V,

Momotae
FQI34P10TU
ON Semiconductor

FQI34P10TU

Wahanga Tapeke: 5648

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 16.75A, 10V,

Momotae
FQB22P10TM
ON Semiconductor

FQB22P10TM

Wahanga Tapeke: 83405

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 11A, 10V,

Momotae
NTK3142PT1G
ON Semiconductor

NTK3142PT1G

Wahanga Tapeke: 882

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 215mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 260mA, 4.5V,

Momotae
NTMFS4836NT1G
ON Semiconductor

NTMFS4836NT1G

Wahanga Tapeke: 867

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Momotae
FDC699P_F077
ON Semiconductor

FDC699P_F077

Wahanga Tapeke: 656

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V,

Momotae