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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
FDP51N25
ON Semiconductor

FDP51N25

Wahanga Tapeke: 23411

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V,

Momotae
NTB60N06LT4G
ON Semiconductor

NTB60N06LT4G

Wahanga Tapeke: 855

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V,

Momotae
FDU8780_F071
ON Semiconductor

FDU8780_F071

Wahanga Tapeke: 691

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V,

Momotae
FDB039N06
ON Semiconductor

FDB039N06

Wahanga Tapeke: 6119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.9 mOhm @ 75A, 10V,

Momotae
IRLM220ATF
ON Semiconductor

IRLM220ATF

Wahanga Tapeke: 174026

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 570mA, 5V,

Momotae
FQD16N25CTM_F080
ON Semiconductor

FQD16N25CTM_F080

Wahanga Tapeke: 645

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 8A, 10V,

Momotae
FDC3512_F095
ON Semiconductor

FDC3512_F095

Wahanga Tapeke: 6093

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 77 mOhm @ 3A, 10V,

Momotae
MTD6N15T4G
ON Semiconductor

MTD6N15T4G

Wahanga Tapeke: 602

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 3A, 10V,

Momotae
NDS7002A_D87Z
ON Semiconductor

NDS7002A_D87Z

Wahanga Tapeke: 579

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae
FDS7764A
ON Semiconductor

FDS7764A

Wahanga Tapeke: 704

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 4.5V,

Momotae
FQT13N06LTF
ON Semiconductor

FQT13N06LTF

Wahanga Tapeke: 168040

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V,

Momotae
NTMFS4837NT1G
ON Semiconductor

NTMFS4837NT1G

Wahanga Tapeke: 847

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), 74A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V,

Momotae
NTMS4705NR2G
ON Semiconductor

NTMS4705NR2G

Wahanga Tapeke: 825

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V,

Momotae
FQT13N06TF
ON Semiconductor

FQT13N06TF

Wahanga Tapeke: 169448

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.4A, 10V,

Momotae
FDB12N50UTM_WS
ON Semiconductor

FDB12N50UTM_WS

Wahanga Tapeke: 659

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 5A, 10V,

Momotae
NTMFS4108NT1G
ON Semiconductor

NTMFS4108NT1G

Wahanga Tapeke: 904

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.2 mOhm @ 21A, 10V,

Momotae
CPH6341-TL-E
ON Semiconductor

CPH6341-TL-E

Wahanga Tapeke: 876

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 59 mOhm @ 3A, 10V,

Momotae
NTD78N03T4G
ON Semiconductor

NTD78N03T4G

Wahanga Tapeke: 813

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Ta), 78A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V,

Momotae
IRFW540ATM
ON Semiconductor

IRFW540ATM

Wahanga Tapeke: 750

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 14A, 10V,

Momotae
FDPF20N50T
ON Semiconductor

FDPF20N50T

Wahanga Tapeke: 23375

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 10A, 10V,

Momotae
FQD7P06TM_F080
ON Semiconductor

FQD7P06TM_F080

Wahanga Tapeke: 692

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 451 mOhm @ 2.7A, 10V,

Momotae
NTJS4160NT1G
ON Semiconductor

NTJS4160NT1G

Wahanga Tapeke: 841

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 2.6A, 10V,

Momotae
NTMFS4847NAT1G
ON Semiconductor

NTMFS4847NAT1G

Wahanga Tapeke: 701

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Ta), 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V,

Momotae
FDA62N28
ON Semiconductor

FDA62N28

Wahanga Tapeke: 570

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 280V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 62A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 31A, 10V,

Momotae
FDMB506P
ON Semiconductor

FDMB506P

Wahanga Tapeke: 657

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6.8A, 4.5V,

Momotae
FDC3612_F095
ON Semiconductor

FDC3612_F095

Wahanga Tapeke: 608

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V,

Momotae
FDB047N10
ON Semiconductor

FDB047N10

Wahanga Tapeke: 29699

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 75A, 10V,

Momotae
FDP6670AL
ON Semiconductor

FDP6670AL

Wahanga Tapeke: 603

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V,

Momotae
FDI040N06
ON Semiconductor

FDI040N06

Wahanga Tapeke: 876

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 75A, 10V,

Momotae
IRLR120ATF
ON Semiconductor

IRLR120ATF

Wahanga Tapeke: 793

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 4.2A, 5V,

Momotae
NTMFS4121NT1G
ON Semiconductor

NTMFS4121NT1G

Wahanga Tapeke: 816

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.25 mOhm @ 24A, 10V,

Momotae
NTD4858NAT4G
ON Semiconductor

NTD4858NAT4G

Wahanga Tapeke: 707

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.2A (Ta), 73A (Tc), Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 30A, 10V,

Momotae
SFW9Z34TM
ON Semiconductor

SFW9Z34TM

Wahanga Tapeke: 706

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 9A, 10V,

Momotae
NDT454P
ON Semiconductor

NDT454P

Wahanga Tapeke: 101089

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5.9A, 10V,

Momotae
FDC655AN
ON Semiconductor

FDC655AN

Wahanga Tapeke: 569

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6.3A, 10V,

Momotae
FQPF47P06
ON Semiconductor

FQPF47P06

Wahanga Tapeke: 22005

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 15A, 10V,

Momotae