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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
FDD6782A
ON Semiconductor

FDD6782A

Wahanga Tapeke: 712

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 14.9A, 10V,

Momotae
FDC633N_F095
ON Semiconductor

FDC633N_F095

Wahanga Tapeke: 582

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5.2A, 4.5V,

Momotae
FQD12N20TM_F080
ON Semiconductor

FQD12N20TM_F080

Wahanga Tapeke: 724

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V,

Momotae
PN3685
ON Semiconductor

PN3685

Wahanga Tapeke: 774

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide),

Momotae
FQD7N10TM
ON Semiconductor

FQD7N10TM

Wahanga Tapeke: 611

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V,

Momotae
FDD6780A
ON Semiconductor

FDD6780A

Wahanga Tapeke: 703

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.4A (Ta), 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 16.4A, 10V,

Momotae
NDS7002A_NB9GGTXA
ON Semiconductor

NDS7002A_NB9GGTXA

Wahanga Tapeke: 607

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae
NTGS1135PT1G
ON Semiconductor

NTGS1135PT1G

Wahanga Tapeke: 678

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.2V, 4.5V, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 4.5V,

Momotae
FQU17P06TU
ON Semiconductor

FQU17P06TU

Wahanga Tapeke: 67251

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 135 mOhm @ 6A, 10V,

Momotae
FQD8P10TM_F080
ON Semiconductor

FQD8P10TM_F080

Wahanga Tapeke: 651

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V,

Momotae
SSR1N60BTM_F080
ON Semiconductor

SSR1N60BTM_F080

Wahanga Tapeke: 6095

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V,

Momotae
NTB5411NT4G
ON Semiconductor

NTB5411NT4G

Wahanga Tapeke: 622

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 40A, 10V,

Momotae
FDJ128N_F077
ON Semiconductor

FDJ128N_F077

Wahanga Tapeke: 619

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V,

Momotae
NTMFS4119NT1G
ON Semiconductor

NTMFS4119NT1G

Wahanga Tapeke: 884

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 29A, 10V,

Momotae
FDH5500
ON Semiconductor

FDH5500

Wahanga Tapeke: 580

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V,

Momotae
NTMFS4823NT3G
ON Semiconductor

NTMFS4823NT3G

Wahanga Tapeke: 661

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A (Ta), 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 10.6 mOhm @ 30A, 10V,

Momotae
FDP8442-F085
ON Semiconductor

FDP8442-F085

Wahanga Tapeke: 609

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 80A, 10V,

Momotae
NTD4809NHT4G
ON Semiconductor

NTD4809NHT4G

Wahanga Tapeke: 842

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.6A (Ta), 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Momotae
FDD6680A
ON Semiconductor

FDD6680A

Wahanga Tapeke: 6086

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 10V,

Momotae
NTD23N03RT4G
ON Semiconductor

NTD23N03RT4G

Wahanga Tapeke: 818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A (Ta), 17.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 6A, 10V,

Momotae
NTMFS4847NT3G
ON Semiconductor

NTMFS4847NT3G

Wahanga Tapeke: 671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Ta), 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 4.1 mOhm @ 30A, 10V,

Momotae
FDC602P_F095
ON Semiconductor

FDC602P_F095

Wahanga Tapeke: 573

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V,

Momotae
IRFP450B
ON Semiconductor

IRFP450B

Wahanga Tapeke: 724

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V,

Momotae
FQP6N60C_F080
ON Semiconductor

FQP6N60C_F080

Wahanga Tapeke: 682

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 2.75A, 10V,

Momotae
FQA36P15_F109
ON Semiconductor

FQA36P15_F109

Wahanga Tapeke: 614

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 18A, 10V,

Momotae
FDP75N08
ON Semiconductor

FDP75N08

Wahanga Tapeke: 575

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 37.5A, 10V,

Momotae
FQT2P25TF
ON Semiconductor

FQT2P25TF

Wahanga Tapeke: 106749

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 550mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 275mA, 10V,

Momotae
FQD6N50CTM_F080
ON Semiconductor

FQD6N50CTM_F080

Wahanga Tapeke: 743

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V,

Momotae
FDD6680
ON Semiconductor

FDD6680

Wahanga Tapeke: 617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 12A, 10V,

Momotae
FDD6682
ON Semiconductor

FDD6682

Wahanga Tapeke: 568

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.2 mOhm @ 17A, 10V,

Momotae
NTMFS4821NT3G
ON Semiconductor

NTMFS4821NT3G

Wahanga Tapeke: 592

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.8A (Ta), 58.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.95 mOhm @ 30A, 10V,

Momotae
IRFR420BTM
ON Semiconductor

IRFR420BTM

Wahanga Tapeke: 694

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.6 Ohm @ 1.15A, 10V,

Momotae
FDP3205
ON Semiconductor

FDP3205

Wahanga Tapeke: 646

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 59A, 10V,

Momotae
FDB8876
ON Semiconductor

FDB8876

Wahanga Tapeke: 555

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 71A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 10V,

Momotae
NTB90N02T4G
ON Semiconductor

NTB90N02T4G

Wahanga Tapeke: 842

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V,

Momotae
NTR3162PT3G
ON Semiconductor

NTR3162PT3G

Wahanga Tapeke: 623

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V,

Momotae