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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
NTMFS4834NT3G
ON Semiconductor

NTMFS4834NT3G

Wahanga Tapeke: 6124

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V,

Momotae
FDMS8662
ON Semiconductor

FDMS8662

Wahanga Tapeke: 497

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), 49A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 28A, 10V,

Momotae
HUFA76609D3ST
ON Semiconductor

HUFA76609D3ST

Wahanga Tapeke: 6066

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 10A, 10V,

Momotae
FDFMA2P857
ON Semiconductor

FDFMA2P857

Wahanga Tapeke: 395

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 4.5V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V,

Momotae
NTD4813NH-1G
ON Semiconductor

NTD4813NH-1G

Wahanga Tapeke: 502

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V,

Momotae
NTMFS4701NT1G
ON Semiconductor

NTMFS4701NT1G

Wahanga Tapeke: 298

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V,

Momotae
NTD80N02
ON Semiconductor

NTD80N02

Wahanga Tapeke: 380

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 80A, 10V,

Momotae
NTD4813N-1G
ON Semiconductor

NTD4813N-1G

Wahanga Tapeke: 467

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V,

Momotae
NTR1P02T3G
ON Semiconductor

NTR1P02T3G

Wahanga Tapeke: 389

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V,

Momotae
IRLS640A
ON Semiconductor

IRLS640A

Wahanga Tapeke: 39202

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 4.9A, 5V,

Momotae
NTD4810N-35G
ON Semiconductor

NTD4810N-35G

Wahanga Tapeke: 363

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 54A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V,

Momotae
FDI8442
ON Semiconductor

FDI8442

Wahanga Tapeke: 485

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V,

Momotae
NTD4302G
ON Semiconductor

NTD4302G

Wahanga Tapeke: 317

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A (Ta), 68A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V,

Momotae
NTD4804NA-1G
ON Semiconductor

NTD4804NA-1G

Wahanga Tapeke: 489

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14.5A (Ta), 124A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 30A, 10V,

Momotae
NTD60N02R
ON Semiconductor

NTD60N02R

Wahanga Tapeke: 337

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Ta), 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 20A, 10V,

Momotae
FDMS8670AS
ON Semiconductor

FDMS8670AS

Wahanga Tapeke: 484

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 23A, 10V,

Momotae
FDZ4670S
ON Semiconductor

FDZ4670S

Wahanga Tapeke: 492

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V,

Momotae
NTD3808N-1G
ON Semiconductor

NTD3808N-1G

Wahanga Tapeke: 577

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 16V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V,

Momotae
NTP75N03-6G
ON Semiconductor

NTP75N03-6G

Wahanga Tapeke: 369

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 37.5A, 10V,

Momotae
NTMFS4744NT3G
ON Semiconductor

NTMFS4744NT3G

Wahanga Tapeke: 505

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 7.6 mOhm @ 30A, 10V,

Momotae
NTD50N03RT4G
ON Semiconductor

NTD50N03RT4G

Wahanga Tapeke: 358

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.8A (Ta), 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V,

Momotae
FDZ7296
ON Semiconductor

FDZ7296

Wahanga Tapeke: 385

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 11A, 10V,

Momotae
NTD32N06LG
ON Semiconductor

NTD32N06LG

Wahanga Tapeke: 291

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 16A, 5V,

Momotae
NTD5406NT4G
ON Semiconductor

NTD5406NT4G

Wahanga Tapeke: 357

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.2A (Ta), 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V,

Momotae
NTLGF3402PT1G
ON Semiconductor

NTLGF3402PT1G

Wahanga Tapeke: 389

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 2.7A, 4.5V,

Momotae
FDD6N20TF
ON Semiconductor

FDD6N20TF

Wahanga Tapeke: 340

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V,

Momotae
FDFC2P100
ON Semiconductor

FDFC2P100

Wahanga Tapeke: 330

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 3A, 4.5V,

Momotae
NTB5404NT4G
ON Semiconductor

NTB5404NT4G

Wahanga Tapeke: 482

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 167A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V,

Momotae
NTD6600N-001
ON Semiconductor

NTD6600N-001

Wahanga Tapeke: 300

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V,

Momotae
NTR4503NT3
ON Semiconductor

NTR4503NT3

Wahanga Tapeke: 333

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 2.5A, 10V,

Momotae
NTD3813N-1G
ON Semiconductor

NTD3813N-1G

Wahanga Tapeke: 541

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 16V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.6A (Ta), 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.75 mOhm @ 15A, 10V,

Momotae
NTD78N03T4
ON Semiconductor

NTD78N03T4

Wahanga Tapeke: 351

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Ta), 78A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 78A, 10V,

Momotae
NTD6600NT4G
ON Semiconductor

NTD6600NT4G

Wahanga Tapeke: 6049

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 146 mOhm @ 6A, 5V,

Momotae
FQB9N50CFTM
ON Semiconductor

FQB9N50CFTM

Wahanga Tapeke: 338

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 4.5A, 10V,

Momotae
NTD65N03RG
ON Semiconductor

NTD65N03RG

Wahanga Tapeke: 355

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Ta), 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V,

Momotae
FDP8878
ON Semiconductor

FDP8878

Wahanga Tapeke: 572

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 40A, 10V,

Momotae