Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 17

JANTX2N6766

Wahanga Tapeke: 1602

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V,

Momotae

Microsemi Corporation

JANTXV2N7224

Wahanga Tapeke: 1603

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

Momotae

Microsemi Corporation

JAN2N6796U

Wahanga Tapeke: 1617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6849U

Wahanga Tapeke: 1623

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V,

Momotae

Microsemi Corporation

JANTXV2N7227

Wahanga Tapeke: 1613

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 415 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

JANTX2N7225

Wahanga Tapeke: 1641

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V,

Momotae

Microsemi Corporation

JAN2N7224

Wahanga Tapeke: 1610

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

Momotae

Microsemi Corporation

JANTX2N6796

Wahanga Tapeke: 6240

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V,

Momotae

Microsemi Corporation

JANTX2N6790U

Wahanga Tapeke: 1674

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V,

Momotae

Microsemi Corporation

JANTX2N6784

Wahanga Tapeke: 1606

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V,

Momotae

Microsemi Corporation

JANTX2N7224U

Wahanga Tapeke: 1661

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

Momotae

Microsemi Corporation

JANTX2N6766T1

Wahanga Tapeke: 1612

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V,

Momotae

Microsemi Corporation

JANTX2N6760

Wahanga Tapeke: 1677

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.22 Ohm @ 5.5A, 10V,

Momotae

Microsemi Corporation

JAN2N7225

Wahanga Tapeke: 1615

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V,

Momotae

Microsemi Corporation

JAN2N7228U

Wahanga Tapeke: 1604

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V,

Momotae

Microsemi Corporation

JAN2N6758

Wahanga Tapeke: 1598

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V,

Momotae

Microsemi Corporation

JAN2N7236U

Wahanga Tapeke: 1602

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 18A, 10V,

Momotae

Microsemi Corporation

JAN2N6798

Wahanga Tapeke: 1671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 5.5A, 10V,

Momotae

Microsemi Corporation

JANTX2N6768T1

Wahanga Tapeke: 1633

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6758

Wahanga Tapeke: 1637

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 9A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6768T1

Wahanga Tapeke: 1655

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6782U

Wahanga Tapeke: 1603

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 610 mOhm @ 3.5A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6790

Wahanga Tapeke: 1634

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V,

Momotae

Microsemi Corporation

JANTX2N6788U

Wahanga Tapeke: 5617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V,

Momotae

Microsemi Corporation

JANTX2N6788

Wahanga Tapeke: 1672

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6796U

Wahanga Tapeke: 1627

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V,

Momotae

Microsemi Corporation

JANTX2N6901

Wahanga Tapeke: 1611

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.69A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 1.07A, 5V,

Momotae

Microsemi Corporation

JANTXV2N6756

Wahanga Tapeke: 1607

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6849

Wahanga Tapeke: 1633

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V,

Momotae

Microsemi Corporation

JANTXV2N7225U

Wahanga Tapeke: 1619

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 27.4A, 10V,

Momotae

Microsemi Corporation

JANTX2N7224

Wahanga Tapeke: 1658

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 81 mOhm @ 34A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6784

Wahanga Tapeke: 1642

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V,

Momotae

Microsemi Corporation

JANTX2N6770T1

Wahanga Tapeke: 6243

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 12A, 10V,

Momotae

Microsemi Corporation

JANTXV2N6796

Wahanga Tapeke: 1683

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V,

Momotae

Microsemi Corporation

JANTX2N7228U

Wahanga Tapeke: 1670

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V,

Momotae

Microsemi Corporation

JAN2N7228

Wahanga Tapeke: 1592

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 515 mOhm @ 12A, 10V,

Momotae