Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 17

APT33N90JCU3

Wahanga Tapeke: 2314

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Momotae

Microsemi Corporation

APT33N90JCU2

Wahanga Tapeke: 2258

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Momotae

Microsemi Corporation

APT28F60S

Wahanga Tapeke: 6168

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

APT24F50S

Wahanga Tapeke: 1566

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 11A, 10V,

Momotae

Microsemi Corporation

APT23F60S

Wahanga Tapeke: 1574

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 11A, 10V,

Momotae

Microsemi Corporation

APT20F50S

Wahanga Tapeke: 1644

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 10A, 10V,

Momotae

Microsemi Corporation

APT15F60S

Wahanga Tapeke: 1645

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 430 mOhm @ 7A, 10V,

Momotae

Microsemi Corporation

APTC90DAM60T1G

Wahanga Tapeke: 1612

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V,

Momotae

Microsemi Corporation

APT14F100S

Wahanga Tapeke: 7712

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 980 mOhm @ 7A, 10V,

Momotae

Microsemi Corporation

APTC90SKM60T1G

Wahanga Tapeke: 1629

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V,

Momotae

Microsemi Corporation

APT50N60JCU2

Wahanga Tapeke: 1545

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 52A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V,

Momotae

Microsemi Corporation

APT26M100JCU2

Wahanga Tapeke: 2341

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V,

Momotae

Microsemi Corporation

APT84F50L

Wahanga Tapeke: 3725

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 84A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V,

Momotae

Microsemi Corporation

APT58F50J

Wahanga Tapeke: 2191

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V,

Momotae

Microsemi Corporation

APT56F60B2

Wahanga Tapeke: 4368

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V,

Momotae

Microsemi Corporation

APT30N60KC6

Wahanga Tapeke: 1263

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

Momotae

Microsemi Corporation

APT43F60B2

Wahanga Tapeke: 5715

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 21A, 10V,

Momotae

Microsemi Corporation

APTM50UM25SG

Wahanga Tapeke: 542

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 149A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 74.5A, 10V,

Momotae

Microsemi Corporation

APTM50SKM38TG

Wahanga Tapeke: 622

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V,

Momotae

Microsemi Corporation

APTM50DAM38TG

Wahanga Tapeke: 524

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V,

Momotae

Microsemi Corporation

APTM50DAM35TG

Wahanga Tapeke: 550

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 99A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V,

Momotae

Microsemi Corporation

APTM20UM05SG

Wahanga Tapeke: 570

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V,

Momotae

Microsemi Corporation

APTM20UM09SG

Wahanga Tapeke: 590

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 74.5A, 10V,

Momotae

Microsemi Corporation

APTM20SKM10TG

Wahanga Tapeke: 553

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V,

Momotae

Microsemi Corporation

APTM20SKM05G

Wahanga Tapeke: 621

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V,

Momotae

Microsemi Corporation

APTM120UM95FAG

Wahanga Tapeke: 554

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 103A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 114 mOhm @ 51.5A, 10V,

Momotae

Microsemi Corporation

APTM20DAM10TG

Wahanga Tapeke: 543

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V,

Momotae

Microsemi Corporation

APTM120U10DAG

Wahanga Tapeke: 6131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V,

Momotae

Microsemi Corporation

APTM120SK68T1G

Wahanga Tapeke: 555

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V,

Momotae

Microsemi Corporation

APTM120SK56T1G

Wahanga Tapeke: 612

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

APTM120SK15G

Wahanga Tapeke: 600

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V,

Momotae

Microsemi Corporation

APTM120SK29TG

Wahanga Tapeke: 565

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V,

Momotae

Microsemi Corporation

APTM120DA56T1G

Wahanga Tapeke: 597

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

APTM120DA68T1G

Wahanga Tapeke: 609

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V,

Momotae

Microsemi Corporation

APTM120DA15G

Wahanga Tapeke: 523

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V,

Momotae

Microsemi Corporation

APTM120DA29TG

Wahanga Tapeke: 540

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V,

Momotae