Transistors - FETs, MOSFETs - Kotahi

APT7F120B

Wahanga Tapeke: 9338

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.9 Ohm @ 3A, 10V,

APT10090BLLG

Wahanga Tapeke: 3787

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 950 mOhm @ 6A, 10V,

APT29F100B2

Wahanga Tapeke: 3359

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 440 mOhm @ 16A, 10V,

APT8020JLL

Wahanga Tapeke: 1917

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 16.5A, 10V,

APTM100UM65SAG

Wahanga Tapeke: 414

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 145A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V,

APT8M100B

Wahanga Tapeke: 10958

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V,

APT77N60JC3

Wahanga Tapeke: 2033

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 77A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 60A, 10V,

APT42F50B

Wahanga Tapeke: 5480

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 21A, 10V,

APT50M65JFLL

Wahanga Tapeke: 1737

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 29A, 10V,

APT5010JVRU2

Wahanga Tapeke: 2081

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V,

APT1204R7BFLLG

Wahanga Tapeke: 5881

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V,

APT60N60BCSG

Wahanga Tapeke: 3141

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 44A, 10V,

APT5SM170S

Wahanga Tapeke: 2313

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 20V,

APT5SM170B

Wahanga Tapeke: 2239

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 1.25 Ohm @ 2.5A, 20V,

APT35SM70S

Wahanga Tapeke: 2305

Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A,

APT130SM70J

Wahanga Tapeke: 2271

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 60A, 20V,

APT130SM70B

Wahanga Tapeke: 2237

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 60A, 20V,

APT60M75L2FLLG

Wahanga Tapeke: 1751

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 73A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V,

APT4016BVRG

Wahanga Tapeke: 6274

APT5014B2VRG

Wahanga Tapeke: 6218

APT4012BVR

Wahanga Tapeke: 2171

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V,

APT10M11JVR

Wahanga Tapeke: 2201

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 144A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V,

APT58MJ50J

Wahanga Tapeke: 2236

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V,

APT10M07JVR

Wahanga Tapeke: 2161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 225A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V,

APT8075BN

Wahanga Tapeke: 2223

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 6.5A, 10V,

APT6040BNG

Wahanga Tapeke: 2165

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V,

APT6040BN

Wahanga Tapeke: 2226

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 9A, 10V,

APT5025BN

Wahanga Tapeke: 6264

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 11.5A, 10V,

APT6030BN

Wahanga Tapeke: 2196

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 11.5A, 10V,

APT5022BNG

Wahanga Tapeke: 2234

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 13.5A, 10V,

APT5020BNFR

Wahanga Tapeke: 2155

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V,

APT5012JN

Wahanga Tapeke: 2168

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 21.5A, 10V,

APT5020BN

Wahanga Tapeke: 2225

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 14A, 10V,

APT40M42JN

Wahanga Tapeke: 2165

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 86A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 43A, 10V,

APT40M75JN

Wahanga Tapeke: 2167

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V,

APT4065BNG

Wahanga Tapeke: 2197

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V,