Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 17

APT1002RBNG

Wahanga Tapeke: 6299

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V,

Momotae

Microsemi Corporation

APT1001RBN

Wahanga Tapeke: 2149

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 5.5A, 10V,

Momotae

Microsemi Corporation

APT80SM120S

Wahanga Tapeke: 2172

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Momotae

Microsemi Corporation

APT80SM120J

Wahanga Tapeke: 2121

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Momotae

Microsemi Corporation

APT80SM120B

Wahanga Tapeke: 2112

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V,

Momotae

Microsemi Corporation

APT70SM70J

Wahanga Tapeke: 6264

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Momotae

Microsemi Corporation

APT70SM70S

Wahanga Tapeke: 2124

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Momotae

Microsemi Corporation

APT25SM120S

Wahanga Tapeke: 2166

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V,

Momotae

Microsemi Corporation

APT70SM70B

Wahanga Tapeke: 2170

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V,

Momotae

Microsemi Corporation

APT25SM120B

Wahanga Tapeke: 2084

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 10A, 20V,

Momotae

Microsemi Corporation

APT7M120B

Wahanga Tapeke: 9685

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V,

Momotae

Microsemi Corporation

APT50MC120JCU2

Wahanga Tapeke: 704

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 71A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V,

Momotae

Microsemi Corporation

APT40SM120S

Wahanga Tapeke: 2514

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 41A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Momotae

Microsemi Corporation

APT40SM120B

Wahanga Tapeke: 1859

Momo FET: N-Channel, Hangarau: SiCFET (Silicon Carbide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 41A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 20V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V,

Momotae

Microsemi Corporation

APTML50UM90R020T1AG

Wahanga Tapeke: 1625

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 52A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V,

Momotae

Microsemi Corporation

APTM120DA30CT1G

Wahanga Tapeke: 1333

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 25A, 10V,

Momotae

Microsemi Corporation

APTML20UM18R010T1AG

Wahanga Tapeke: 1604

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 109A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V,

Momotae

Microsemi Corporation

APT14M100S

Wahanga Tapeke: 8207

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 880 mOhm @ 7A, 10V,

Momotae

Microsemi Corporation

APT18M80S

Wahanga Tapeke: 1606

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 530 mOhm @ 9A, 10V,

Momotae

Microsemi Corporation

APT12057JLL

Wahanga Tapeke: 1638

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V,

Momotae

Microsemi Corporation

APT53N60SC6

Wahanga Tapeke: 1604

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 25.8A, 10V,

Momotae

Microsemi Corporation

APT12067JLL

Wahanga Tapeke: 1582

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V,

Momotae

Microsemi Corporation

APTM100DA18CT1G

Wahanga Tapeke: 6180

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 216 mOhm @ 33A, 10V,

Momotae

Microsemi Corporation

APTC60DAM24CT1G

Wahanga Tapeke: 1620

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V,

Momotae

Microsemi Corporation

APTC90DAM60CT1G

Wahanga Tapeke: 1078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V,

Momotae

Microsemi Corporation

APT33N90JCCU3

Wahanga Tapeke: 1668

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Momotae

Microsemi Corporation

APT33N90JCCU2

Wahanga Tapeke: 2047

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V,

Momotae

Microsemi Corporation

APT20M120JCU3

Wahanga Tapeke: 2243

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

APT20M120JCU2

Wahanga Tapeke: 2294

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 672 mOhm @ 14A, 10V,

Momotae

Microsemi Corporation

APT5014SLLG/TR

Wahanga Tapeke: 6205

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 17.5A, 10V,

Momotae

Microsemi Corporation

APT38N60SC6

Wahanga Tapeke: 1657

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V,

Momotae

Microsemi Corporation

APTML60U12R020T1AG

Wahanga Tapeke: 1584

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V,

Momotae

Microsemi Corporation

APT30N60SC6

Wahanga Tapeke: 6234

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

Momotae

Microsemi Corporation

APT17F100S

Wahanga Tapeke: 6915

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 780 mOhm @ 9A, 10V,

Momotae

Microsemi Corporation

APT9F100S

Wahanga Tapeke: 1569

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1000V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 5A, 10V,

Momotae

Microsemi Corporation

APT11F80S

Wahanga Tapeke: 1633

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V,

Momotae