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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IPP80R900P7XKSA1
Infineon Technologies

IPP80R900P7XKSA1

Wahanga Tapeke: 40478

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V,

Momotae
IPP50R380CEXKSA1
Infineon Technologies

IPP50R380CEXKSA1

Wahanga Tapeke: 2653

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 13V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 13V,

Momotae
IPW60R099CPFKSA1
Infineon Technologies

IPW60R099CPFKSA1

Wahanga Tapeke: 2342

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 18A, 10V,

Momotae
IRFBA1405PPBF
Infineon Technologies

IRFBA1405PPBF

Wahanga Tapeke: 23431

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 174A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V,

Momotae
IRLR3705ZPBF
Infineon Technologies

IRLR3705ZPBF

Wahanga Tapeke: 42598

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 42A, 10V,

Momotae
SPP20N60C3XKSA1
Infineon Technologies

SPP20N60C3XKSA1

Wahanga Tapeke: 15072

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V,

Momotae
IPA041N04NGXKSA1
Infineon Technologies

IPA041N04NGXKSA1

Wahanga Tapeke: 60098

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.1 mOhm @ 70A, 10V,

Momotae
IPA60R385CPXKSA1
Infineon Technologies

IPA60R385CPXKSA1

Wahanga Tapeke: 29565

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V,

Momotae
IRFZ44VZSPBF
Infineon Technologies

IRFZ44VZSPBF

Wahanga Tapeke: 31735

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 57A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V,

Momotae
IRF5210LPBF
Infineon Technologies

IRF5210LPBF

Wahanga Tapeke: 26047

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 38A, 10V,

Momotae
IPP120N04S302AKSA1
Infineon Technologies

IPP120N04S302AKSA1

Wahanga Tapeke: 19704

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V,

Momotae
IRFZ44ESTRLPBF
Infineon Technologies

IRFZ44ESTRLPBF

Wahanga Tapeke: 107278

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V,

Momotae
IPU95R450P7AKMA1
Infineon Technologies

IPU95R450P7AKMA1

Wahanga Tapeke: 2929

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 950V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 7.2A, 10V,

Momotae
IPA80R280P7XKSA1
Infineon Technologies

IPA80R280P7XKSA1

Wahanga Tapeke: 22078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V,

Momotae
IPP60R125C6XKSA1
Infineon Technologies

IPP60R125C6XKSA1

Wahanga Tapeke: 2766

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

Momotae
IPP029N06NAKSA1
Infineon Technologies

IPP029N06NAKSA1

Wahanga Tapeke: 29786

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2.9 mOhm @ 100A, 10V,

Momotae
IRF3808STRLPBF
Infineon Technologies

IRF3808STRLPBF

Wahanga Tapeke: 46803

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 106A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 82A, 10V,

Momotae
IRF1310NPBF
Infineon Technologies

IRF1310NPBF

Wahanga Tapeke: 42828

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 22A, 10V,

Momotae
IRLIZ44NPBF
Infineon Technologies

IRLIZ44NPBF

Wahanga Tapeke: 46079

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 17A, 10V,

Momotae
IPW60R190E6FKSA1
Infineon Technologies

IPW60R190E6FKSA1

Wahanga Tapeke: 3332

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V,

Momotae
IPP015N04NGXKSA1
Infineon Technologies

IPP015N04NGXKSA1

Wahanga Tapeke: 17642

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V,

Momotae
IRF200P222
Infineon Technologies

IRF200P222

Wahanga Tapeke: 6749

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 182A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 82A, 10V,

Momotae
IRFS4310ZTRLPBF
Infineon Technologies

IRFS4310ZTRLPBF

Wahanga Tapeke: 43733

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V,

Momotae
IPP65R110CFDAAKSA1
Infineon Technologies

IPP65R110CFDAAKSA1

Wahanga Tapeke: 9871

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 12.7A, 10V,

Momotae
IPP65R225C7XKSA1
Infineon Technologies

IPP65R225C7XKSA1

Wahanga Tapeke: 24190

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 225 mOhm @ 4.8A, 10V,

Momotae
IPA50R250CPXKSA1
Infineon Technologies

IPA50R250CPXKSA1

Wahanga Tapeke: 3175

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V,

Momotae
IPSA70R2K0P7SAKMA1
Infineon Technologies

IPSA70R2K0P7SAKMA1

Wahanga Tapeke: 2932

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V,

Momotae
IPAW60R280CEXKSA1
Infineon Technologies

IPAW60R280CEXKSA1

Wahanga Tapeke: 69618

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V,

Momotae
IRF4905LPBF
Infineon Technologies

IRF4905LPBF

Wahanga Tapeke: 29799

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V,

Momotae
IPP052N06L3GXKSA1
Infineon Technologies

IPP052N06L3GXKSA1

Wahanga Tapeke: 49565

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V,

Momotae
IRFP4227PBF
Infineon Technologies

IRFP4227PBF

Wahanga Tapeke: 16503

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 46A, 10V,

Momotae
IPP80P03P4L04AKSA1
Infineon Technologies

IPP80P03P4L04AKSA1

Wahanga Tapeke: 33447

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 80A, 10V,

Momotae
IPAN80R450P7XKSA1
Infineon Technologies

IPAN80R450P7XKSA1

Wahanga Tapeke: 2765

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V,

Momotae
IPP100N10S305AKSA1
Infineon Technologies

IPP100N10S305AKSA1

Wahanga Tapeke: 20646

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 100A, 10V,

Momotae
IPP040N06N3GXKSA1
Infineon Technologies

IPP040N06N3GXKSA1

Wahanga Tapeke: 39840

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 90A, 10V,

Momotae
IRF100P219XKMA1
Infineon Technologies

IRF100P219XKMA1

Wahanga Tapeke: 2602

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V,

Momotae