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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IPA50R280CEXKSA2
Infineon Technologies

IPA50R280CEXKSA2

Wahanga Tapeke: 52764

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 13V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 4.2A, 13V,

Momotae
IPI80N04S403AKSA1
Infineon Technologies

IPI80N04S403AKSA1

Wahanga Tapeke: 45247

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

Momotae
SPP21N50C3XKSA1
Infineon Technologies

SPP21N50C3XKSA1

Wahanga Tapeke: 18656

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V,

Momotae
IPA60R650CEXKSA1
Infineon Technologies

IPA60R650CEXKSA1

Wahanga Tapeke: 67856

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 2.4A, 10V,

Momotae
IPZA60R120P7XKSA1
Infineon Technologies

IPZA60R120P7XKSA1

Wahanga Tapeke: 1626

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 8.2A, 10V,

Momotae
IRFS7734TRL7PP
Infineon Technologies

IRFS7734TRL7PP

Wahanga Tapeke: 46835

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 197A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 3.05 mOhm @ 100A, 10V,

Momotae
IPP60R040C7XKSA1
Infineon Technologies

IPP60R040C7XKSA1

Wahanga Tapeke: 5430

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V,

Momotae
IPA60R280P6XKSA1
Infineon Technologies

IPA60R280P6XKSA1

Wahanga Tapeke: 30698

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 5.2A, 10V,

Momotae
IPW80R360P7XKSA1
Infineon Technologies

IPW80R360P7XKSA1

Wahanga Tapeke: 22478

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V,

Momotae
IPU039N03LGXK
Infineon Technologies

IPU039N03LGXK

Wahanga Tapeke: 53156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.9 mOhm @ 30A, 10V,

Momotae
IRF200S234
Infineon Technologies

IRF200S234

Wahanga Tapeke: 33708

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16.9 mOhm @ 51A, 10V,

Momotae
IPP80R750P7XKSA1
Infineon Technologies

IPP80R750P7XKSA1

Wahanga Tapeke: 39881

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V,

Momotae
IPA60R099C6XKSA1
Infineon Technologies

IPA60R099C6XKSA1

Wahanga Tapeke: 3123

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 18.1A, 10V,

Momotae
IRFB23N20DPBF
Infineon Technologies

IRFB23N20DPBF

Wahanga Tapeke: 36487

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V,

Momotae
IRLZ24NSTRLPBF
Infineon Technologies

IRLZ24NSTRLPBF

Wahanga Tapeke: 104455

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 11A, 10V,

Momotae
IRFB52N15DPBF
Infineon Technologies

IRFB52N15DPBF

Wahanga Tapeke: 24908

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 36A, 10V,

Momotae
IRF100P218XKMA1
Infineon Technologies

IRF100P218XKMA1

Wahanga Tapeke: 2451

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.28 mOhm @ 100A, 10V,

Momotae
IRFP4332PBF
Infineon Technologies

IRFP4332PBF

Wahanga Tapeke: 15631

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 57A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 35A, 10V,

Momotae
IPA60R080P7XKSA1
Infineon Technologies

IPA60R080P7XKSA1

Wahanga Tapeke: 11575

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 11.8A, 10V,

Momotae
IRFB59N10DPBF
Infineon Technologies

IRFB59N10DPBF

Wahanga Tapeke: 30711

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V,

Momotae
IPA60R950C6XKSA1
Infineon Technologies

IPA60R950C6XKSA1

Wahanga Tapeke: 3156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V,

Momotae
IRFB4127PBF
Infineon Technologies

IRFB4127PBF

Wahanga Tapeke: 18027

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 44A, 10V,

Momotae
SPP07N60C3XKSA1
Infineon Technologies

SPP07N60C3XKSA1

Wahanga Tapeke: 32208

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V,

Momotae
IRF1010ESTRLPBF
Infineon Technologies

IRF1010ESTRLPBF

Wahanga Tapeke: 84472

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 84A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V,

Momotae
IRFP4229PBF
Infineon Technologies

IRFP4229PBF

Wahanga Tapeke: 16952

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 26A, 10V,

Momotae
IRFS3206TRRPBF
Infineon Technologies

IRFS3206TRRPBF

Wahanga Tapeke: 43544

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 75A, 10V,

Momotae
IRFB7440PBF
Infineon Technologies

IRFB7440PBF

Wahanga Tapeke: 41633

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 100A, 10V,

Momotae
IPP052N08N5AKSA1
Infineon Technologies

IPP052N08N5AKSA1

Wahanga Tapeke: 29696

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V,

Momotae
IRF3805STRLPBF
Infineon Technologies

IRF3805STRLPBF

Wahanga Tapeke: 35359

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 75A, 10V,

Momotae
IPA60R230P6XKSA1
Infineon Technologies

IPA60R230P6XKSA1

Wahanga Tapeke: 27820

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V,

Momotae
IPW60R170CFD7XKSA1
Infineon Technologies

IPW60R170CFD7XKSA1

Wahanga Tapeke: 2788

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 6A, 10V,

Momotae
IPP80R450P7XKSA1
Infineon Technologies

IPP80R450P7XKSA1

Wahanga Tapeke: 29152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V,

Momotae
IRL3803PBF
Infineon Technologies

IRL3803PBF

Wahanga Tapeke: 28169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V,

Momotae
IRF3805S-7PPBF
Infineon Technologies

IRF3805S-7PPBF

Wahanga Tapeke: 13813

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 140A, 10V,

Momotae
IPA093N06N3GXKSA1
Infineon Technologies

IPA093N06N3GXKSA1

Wahanga Tapeke: 62635

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 40A, 10V,

Momotae
IRFZ44VPBF
Infineon Technologies

IRFZ44VPBF

Wahanga Tapeke: 61122

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16.5 mOhm @ 31A, 10V,

Momotae