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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
IRFU7440PBF
Infineon Technologies

IRFU7440PBF

Wahanga Tapeke: 42650

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 90A, 10V,

Momotae
IRLB8314PBF
Infineon Technologies

IRLB8314PBF

Wahanga Tapeke: 68466

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 68A, 10V,

Momotae
IPP034NE7N3GXKSA1
Infineon Technologies

IPP034NE7N3GXKSA1

Wahanga Tapeke: 23187

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 100A, 10V,

Momotae
IRL8113PBF
Infineon Technologies

IRL8113PBF

Wahanga Tapeke: 41003

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 105A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V,

Momotae
IPSA70R1K2P7SAKMA1
Infineon Technologies

IPSA70R1K2P7SAKMA1

Wahanga Tapeke: 2796

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 900mA, 10V,

Momotae
IRL60S216
Infineon Technologies

IRL60S216

Wahanga Tapeke: 18402

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.95 mOhm @ 100A, 10V,

Momotae
IPAW60R190CEXKSA1
Infineon Technologies

IPAW60R190CEXKSA1

Wahanga Tapeke: 56438

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V,

Momotae
IPA80R750P7XKSA1
Infineon Technologies

IPA80R750P7XKSA1

Wahanga Tapeke: 39823

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V,

Momotae
IPA057N06N3GXKSA1
Infineon Technologies

IPA057N06N3GXKSA1

Wahanga Tapeke: 2064

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.7 mOhm @ 60A, 10V,

Momotae
IPP530N15N3GXKSA1
Infineon Technologies

IPP530N15N3GXKSA1

Wahanga Tapeke: 2849

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 18A, 10V,

Momotae
IRF3315PBF
Infineon Technologies

IRF3315PBF

Wahanga Tapeke: 38844

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 12A, 10V,

Momotae
IPA075N15N3GXKSA1
Infineon Technologies

IPA075N15N3GXKSA1

Wahanga Tapeke: 3045

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 43A, 10V,

Momotae
IPP100N08S2L07AKSA1
Infineon Technologies

IPP100N08S2L07AKSA1

Wahanga Tapeke: 52683

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V,

Momotae
IRF530NSTRLPBF
Infineon Technologies

IRF530NSTRLPBF

Wahanga Tapeke: 128633

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 9A, 10V,

Momotae
IPP60R170CFD7XKSA1
Infineon Technologies

IPP60R170CFD7XKSA1

Wahanga Tapeke: 3037

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 6A, 10V,

Momotae
IRLB3036PBF
Infineon Technologies

IRLB3036PBF

Wahanga Tapeke: 17506

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 165A, 10V,

Momotae
IPP086N10N3GXKSA1
Infineon Technologies

IPP086N10N3GXKSA1

Wahanga Tapeke: 38790

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V,

Momotae
SPW11N80C3FKSA1
Infineon Technologies

SPW11N80C3FKSA1

Wahanga Tapeke: 1610

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V,

Momotae
IPW65R065C7XKSA1
Infineon Technologies

IPW65R065C7XKSA1

Wahanga Tapeke: 10290

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 17.1A, 10V,

Momotae
IRF300P227
Infineon Technologies

IRF300P227

Wahanga Tapeke: 10886

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 30A, 10V,

Momotae
IRF135B203
Infineon Technologies

IRF135B203

Wahanga Tapeke: 23939

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 135V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 129A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V,

Momotae
IPI60R125CPXKSA1
Infineon Technologies

IPI60R125CPXKSA1

Wahanga Tapeke: 11826

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 16A, 10V,

Momotae
IPP90R340C3XKSA1
Infineon Technologies

IPP90R340C3XKSA1

Wahanga Tapeke: 11890

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V,

Momotae
IPW65R080CFDAFKSA1
Infineon Technologies

IPW65R080CFDAFKSA1

Wahanga Tapeke: 6140

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 17.6A, 10V,

Momotae
IPP076N12N3GXKSA1
Infineon Technologies

IPP076N12N3GXKSA1

Wahanga Tapeke: 2056

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 120V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.6 mOhm @ 100A, 10V,

Momotae
IRFP250MPBF
Infineon Technologies

IRFP250MPBF

Wahanga Tapeke: 36997

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 18A, 10V,

Momotae
IRFI4510GPBF
Infineon Technologies

IRFI4510GPBF

Wahanga Tapeke: 35793

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 21A, 10V,

Momotae
IRF1010EZSTRLP
Infineon Technologies

IRF1010EZSTRLP

Wahanga Tapeke: 88038

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 51A, 10V,

Momotae
IPAW60R360P7SXKSA1
Infineon Technologies

IPAW60R360P7SXKSA1

Wahanga Tapeke: 55490

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 360 mOhm @ 2.7A, 10V,

Momotae
IRF1407PBF
Infineon Technologies

IRF1407PBF

Wahanga Tapeke: 31387

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V,

Momotae
IPA60R280P7XKSA1
Infineon Technologies

IPA60R280P7XKSA1

Wahanga Tapeke: 31589

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 3.8A, 10V,

Momotae
IPP60R090CFD7XKSA1
Infineon Technologies

IPP60R090CFD7XKSA1

Wahanga Tapeke: 2131

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 11.4A, 10V,

Momotae
IPP126N10N3GXKSA1
Infineon Technologies

IPP126N10N3GXKSA1

Wahanga Tapeke: 49483

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 12.3 mOhm @ 46A, 10V,

Momotae
IPW60R125C6FKSA1
Infineon Technologies

IPW60R125C6FKSA1

Wahanga Tapeke: 3548

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V,

Momotae
IRFB23N15DPBF
Infineon Technologies

IRFB23N15DPBF

Wahanga Tapeke: 39026

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 14A, 10V,

Momotae
IRF200P223
Infineon Technologies

IRF200P223

Wahanga Tapeke: 10451

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 60A, 10V,

Momotae