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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
BSC0904NSIATMA1
Infineon Technologies

BSC0904NSIATMA1

Wahanga Tapeke: 7480

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Ta), 78A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 30A, 10V,

Momotae
BSZ050N03LSGATMA1
Infineon Technologies

BSZ050N03LSGATMA1

Wahanga Tapeke: 147799

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V,

Momotae
BSZ0994NSATMA1
Infineon Technologies

BSZ0994NSATMA1

Wahanga Tapeke: 149303

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 5A, 10V,

Momotae
BSC440N10NS3GATMA1
Infineon Technologies

BSC440N10NS3GATMA1

Wahanga Tapeke: 119139

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Ta), 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 12A, 10V,

Momotae
BSZ065N03LSATMA1
Infineon Technologies

BSZ065N03LSATMA1

Wahanga Tapeke: 7461

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 20A, 10V,

Momotae
BSS159NH6906XTSA1
Infineon Technologies

BSS159NH6906XTSA1

Wahanga Tapeke: 190333

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

Momotae
BSP320SH6433XTMA1
Infineon Technologies

BSP320SH6433XTMA1

Wahanga Tapeke: 138092

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Tj), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Momotae
BSL373SNH6327XTSA1
Infineon Technologies

BSL373SNH6327XTSA1

Wahanga Tapeke: 190490

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 2A, 10V,

Momotae
BSL296SNH6327XTSA1
Infineon Technologies

BSL296SNH6327XTSA1

Wahanga Tapeke: 106246

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 460 mOhm @ 1.26A, 10V,

Momotae
BSS126H6906XTSA1
Infineon Technologies

BSS126H6906XTSA1

Wahanga Tapeke: 153215

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae
BSZ100N03LSGATMA1
Infineon Technologies

BSZ100N03LSGATMA1

Wahanga Tapeke: 89341

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 20A, 10V,

Momotae
BSC100N03MSGATMA1
Infineon Technologies

BSC100N03MSGATMA1

Wahanga Tapeke: 196508

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V,

Momotae
BSS169H6906XTSA1
Infineon Technologies

BSS169H6906XTSA1

Wahanga Tapeke: 152457

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae
BSC090N03MSGATMA1
Infineon Technologies

BSC090N03MSGATMA1

Wahanga Tapeke: 195504

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Momotae
BSC080N03LSGATMA1
Infineon Technologies

BSC080N03LSGATMA1

Wahanga Tapeke: 140304

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

Momotae
BSZ120P03NS3EGATMA1
Infineon Technologies

BSZ120P03NS3EGATMA1

Wahanga Tapeke: 146859

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V,

Momotae
BSZ120P03NS3GATMA1
Infineon Technologies

BSZ120P03NS3GATMA1

Wahanga Tapeke: 154285

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V,

Momotae
BSS138WH6327XTSA1
Infineon Technologies

BSS138WH6327XTSA1

Wahanga Tapeke: 171697

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V,

Momotae
BSP88H6327XTSA1
Infineon Technologies

BSP88H6327XTSA1

Wahanga Tapeke: 183070

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Momotae
BSZ180P03NS3EGATMA1
Infineon Technologies

BSZ180P03NS3EGATMA1

Wahanga Tapeke: 186097

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 39.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

Momotae
BSZ180P03NS3GATMA1
Infineon Technologies

BSZ180P03NS3GATMA1

Wahanga Tapeke: 124428

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 39.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

Momotae
BSC886N03LSGATMA1
Infineon Technologies

BSC886N03LSGATMA1

Wahanga Tapeke: 123249

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V,

Momotae
BSZ130N03MSGATMA1
Infineon Technologies

BSZ130N03MSGATMA1

Wahanga Tapeke: 7438

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 20A, 10V,

Momotae
BSS139H6906XTSA1
Infineon Technologies

BSS139H6906XTSA1

Wahanga Tapeke: 186343

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V,

Momotae
BSC0996NSATMA1
Infineon Technologies

BSC0996NSATMA1

Wahanga Tapeke: 103955

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 34V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 8A, 10V,

Momotae
BSC079N03LSCGATMA1
Infineon Technologies

BSC079N03LSCGATMA1

Wahanga Tapeke: 187012

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.9 mOhm @ 30A, 10V,

Momotae
BSL372SNH6327XTSA1
Infineon Technologies

BSL372SNH6327XTSA1

Wahanga Tapeke: 143818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V,

Momotae
BSL207SPH6327XTSA1
Infineon Technologies

BSL207SPH6327XTSA1

Wahanga Tapeke: 128196

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V,

Momotae
BSL606SNH6327XTSA1
Infineon Technologies

BSL606SNH6327XTSA1

Wahanga Tapeke: 124505

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.5A, 10V,

Momotae
BSZ340N08NS3GATMA1
Infineon Technologies

BSZ340N08NS3GATMA1

Wahanga Tapeke: 7427

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 12A, 10V,

Momotae
BSL202SNH6327XTSA1
Infineon Technologies

BSL202SNH6327XTSA1

Wahanga Tapeke: 109229

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 4.5V,

Momotae
BSC0909NSATMA1
Infineon Technologies

BSC0909NSATMA1

Wahanga Tapeke: 174435

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 34V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.2 mOhm @ 20A, 10V,

Momotae
BSL303SPEH6327XTSA1
Infineon Technologies

BSL303SPEH6327XTSA1

Wahanga Tapeke: 185383

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 6.3A, 10V,

Momotae
BSC120N03MSGATMA1
Infineon Technologies

BSC120N03MSGATMA1

Wahanga Tapeke: 174610

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V,

Momotae
BSL802SNH6327XTSA1
Infineon Technologies

BSL802SNH6327XTSA1

Wahanga Tapeke: 143319

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.8V, 2.5V, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 7.5A, 2.5V,

Momotae
BSL302SNH6327XTSA1
Infineon Technologies

BSL302SNH6327XTSA1

Wahanga Tapeke: 181075

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V,

Momotae