Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

APTM120H29FG

Wahanga Tapeke: 261

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A, Rds Kei (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM10HM05FG

Wahanga Tapeke: 446

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 278A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM50H15FT1G

Wahanga Tapeke: 2107

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTMC170AM30CT1AG

Wahanga Tapeke: 139

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1700V (1.7kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 5mA (Typ),

Ki te hiahia

Microsemi Corporation

APTM08TAM04PG

Wahanga Tapeke: 1065

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM20HM08FG

Wahanga Tapeke: 381

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 208A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM20AM05FG

Wahanga Tapeke: 433

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM10HM09FT3G

Wahanga Tapeke: 940

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM10HM19FT3G

Wahanga Tapeke: 1470

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC60HM83FT2G

Wahanga Tapeke: 1719

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A, Rds Kei (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTC80H15T1G

Wahanga Tapeke: 1728

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Ki te hiahia

Microsemi Corporation

APTM50AM38SCTG

Wahanga Tapeke: 599

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM20HM10FG

Wahanga Tapeke: 489

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTC60HM45SCTG

Wahanga Tapeke: 743

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTC80H15T3G

Wahanga Tapeke: 1759

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Ki te hiahia

Microsemi Corporation

APTC60HM35T3G

Wahanga Tapeke: 248

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Ki te hiahia

Microsemi Corporation

APTM50TAM65FPG

Wahanga Tapeke: 545

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60TDUM35PG

Wahanga Tapeke: 688

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Ki te hiahia

Microsemi Corporation

APTM10AM05FTG

Wahanga Tapeke: 820

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 278A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTC60HM70RT3G

Wahanga Tapeke: 1479

Momo FET: 4 N-Channel (H-Bridge) + Bridge Rectifier, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTC60HM45T1G

Wahanga Tapeke: 1300

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTC80TA15PG

Wahanga Tapeke: 1022

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Ki te hiahia

Microsemi Corporation

APTC80H29T3G

Wahanga Tapeke: 2362

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM50HM75SCTG

Wahanga Tapeke: 667

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTMC120AM20CT1AG

Wahanga Tapeke: 173

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 143A (Tc), Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2mA (Typ),

Ki te hiahia

Microsemi Corporation

APTM120A20DG

Wahanga Tapeke: 538

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Ki te hiahia

Microsemi Corporation

APTC60AM45T1G

Wahanga Tapeke: 293

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTMC120TAM34CT3AG

Wahanga Tapeke: 251

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 74A (Tc), Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 4V @ 15mA,

Ki te hiahia

Microsemi Corporation

APTM50DDAM65T3G

Wahanga Tapeke: 1269

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60DDAM24T3G

Wahanga Tapeke: 1114

Momo FET: 2 N Channel (Dual Buck Chopper), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM10DSKM19T3G

Wahanga Tapeke: 1965

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM20AM06SG

Wahanga Tapeke: 553

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300A, Rds Kei (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Ki te hiahia

Microsemi Corporation

APTC60DDAM45T1G

Wahanga Tapeke: 1722

Momo FET: 2 N Channel (Dual Buck Chopper), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTM100H18FG

Wahanga Tapeke: 404

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM100H35FT3G

Wahanga Tapeke: 784

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM20TAM16FPG

Wahanga Tapeke: 537

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 104A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia