Transistors - FETs, MOSFETs - Huinga

ALD114835PCL

Wahanga Tapeke: 21080

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Depletion Mode, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12mA, 3mA, Rds Kei (Max) @ Id, Vgs: 540 Ohm @ 0V, Vgs (th) (Max) @ Id: 3.45V @ 1µA,

ALD114804PCL

Wahanga Tapeke: 23866

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Depletion Mode, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12mA, 3mA, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Max) @ Id: 360mV @ 1µA,

ALD1110EPAL

Wahanga Tapeke: 20563

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 5V, Vgs (th) (Max) @ Id: 1.01V @ 1µA,

ALD210800PCL

Wahanga Tapeke: 22423

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80mA, Rds Kei (Max) @ Id, Vgs: 25 Ohm, Vgs (th) (Max) @ Id: 20mV @ 10µA,

ALD212900SAL

Wahanga Tapeke: 29389

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80mA, Rds Kei (Max) @ Id, Vgs: 14 Ohm, Vgs (th) (Max) @ Id: 20mV @ 20µA,

ALD1102SAL

Wahanga Tapeke: 18848

Momo FET: 2 P-Channel (Dual) Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, Rds Kei (Max) @ Id, Vgs: 270 Ohm @ 5V, Vgs (th) (Max) @ Id: 1.2V @ 10µA,

ALD310704APCL

Wahanga Tapeke: 13531

Momo FET: 4 P-Channel, Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 8V, Vgs (th) (Max) @ Id: 380mV @ 1µA,

ALD110904PAL

Wahanga Tapeke: 22024

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12mA, 3mA, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs (th) (Max) @ Id: 420mV @ 1µA,

ALD110904SAL

Wahanga Tapeke: 21998

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12mA, 3mA, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4.4V, Vgs (th) (Max) @ Id: 420mV @ 1µA,

ALD110808APCL

Wahanga Tapeke: 15203

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12mA, 3mA, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4.8V, Vgs (th) (Max) @ Id: 810mV @ 1µA,

ALD110900PAL

Wahanga Tapeke: 21972

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Max) @ Id: 20mV @ 1µA,

APTMC120TAM33CTPAG

Wahanga Tapeke: 107

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A (Tc), Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 3mA (Typ),

APTM50H14FT3G

Wahanga Tapeke: 1149

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A, Rds Kei (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

APTMC120AM25CT3AG

Wahanga Tapeke: 283

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 113A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 4mA (Typ),

APTSM120AM08CT6AG

Wahanga Tapeke: 144

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 370A (Tc), Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 3V @ 10mA,

APTSM120TAM33CTPAG

Wahanga Tapeke: 177

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 112A (Tc), Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 3V @ 3mA,

APTSM120AM09CD3AG

Wahanga Tapeke: 195

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 337A (Tc), Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

APTSM120AM14CD3AG

Wahanga Tapeke: 248

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 337A (Tc), Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

APTSM120AM55CT1AG

Wahanga Tapeke: 589

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 74A (Tc), Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 3V @ 2mA,

APTSM120AM25CT3AG

Wahanga Tapeke: 290

Momo FET: 2 N-Channel (Dual), Schottky, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 148A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 3V @ 4mA,

APTMC120AM08CD3AG

Wahanga Tapeke: 68

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250A (Tc), Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 10mA (Typ),

APTM50HM65FT3G

Wahanga Tapeke: 692

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM50AM38STG

Wahanga Tapeke: 559

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

AO4828

Wahanga Tapeke: 197

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, Rds Kei (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOE6936

Wahanga Tapeke: 241

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), 85A (Tc), Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V, 2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 2.1V @ 250µA,

AO4862

Wahanga Tapeke: 168294

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AON4803

Wahanga Tapeke: 144807

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AO8810

Wahanga Tapeke: 162690

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

AON6996

Wahanga Tapeke: 180862

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A, 60A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

AON6850

Wahanga Tapeke: 99071

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

AO4614A

Wahanga Tapeke: 181100

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 5A, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO6602L

Wahanga Tapeke: 108988

Momo FET: N and P-Channel Complementary, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOC3868

Wahanga Tapeke: 244

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

AOE6922

Wahanga Tapeke: 231

AO8822

Wahanga Tapeke: 186647

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

AO6800

Wahanga Tapeke: 191185

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,