Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

APTM10AM02FG

Wahanga Tapeke: 400

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 495A, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM10DSKM09T3G

Wahanga Tapeke: 1457

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60BBM24T3G

Wahanga Tapeke: 1133

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTML602U12R020T3AG

Wahanga Tapeke: 485

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60HM70BT3G

Wahanga Tapeke: 1289

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTM20HM16FTG

Wahanga Tapeke: 748

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 104A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM20AM10FTG

Wahanga Tapeke: 856

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTMC120AM09CT3AG

Wahanga Tapeke: 162

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 295A (Tc), Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 40mA (Typ),

Ki te hiahia

Microsemi Corporation

APTC60DDAM70T1G

Wahanga Tapeke: 2258

Momo FET: 2 N Channel (Dual Buck Chopper), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTC60AM45BC1G

Wahanga Tapeke: 1478

Momo FET: 3 N Channel (Phase Leg + Boost Chopper), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTM10TAM09FPG

Wahanga Tapeke: 558

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100DSK35T3G

Wahanga Tapeke: 1267

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60AM45B1G

Wahanga Tapeke: 1093

Momo FET: 3 N Channel (Phase Leg + Boost Chopper), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTM100H46FT3G

Wahanga Tapeke: 1492

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, Rds Kei (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM50HM75FTG

Wahanga Tapeke: 809

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60HM24T3G

Wahanga Tapeke: 757

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM100AM90FG

Wahanga Tapeke: 379

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM20DUM05G

Wahanga Tapeke: 536

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM100H35FTG

Wahanga Tapeke: 731

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM50AM35FTG

Wahanga Tapeke: 766

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 99A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM50HM65FTG

Wahanga Tapeke: 767

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100TA35FPG

Wahanga Tapeke: 533

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60HM70T1G

Wahanga Tapeke: 1743

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTM50HM35FG

Wahanga Tapeke: 448

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 99A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM60A11FT1G

Wahanga Tapeke: 2026

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A, Rds Kei (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTC60DHM24T3G

Wahanga Tapeke: 1204

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTC60AM24SCTG

Wahanga Tapeke: 712

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTMC120HM17CT3AG

Wahanga Tapeke: 306

Momo FET: 4 N-Channel, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 147A (Tc), Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,

Ki te hiahia

Microsemi Corporation

APTM50DDA10T3G

Wahanga Tapeke: 1671

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM50HM38FG

Wahanga Tapeke: 461

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM120A15FG

Wahanga Tapeke: 396

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTC80TDU15PG

Wahanga Tapeke: 936

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Ki te hiahia

Microsemi Corporation

APTM50AM17FG

Wahanga Tapeke: 423

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM10DUM02G

Wahanga Tapeke: 488

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 495A, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTMC170AM60CT1AG

Wahanga Tapeke: 196

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1700V (1.7kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),

Ki te hiahia

Microsemi Corporation

APTC60VDAM45T1G

Wahanga Tapeke: 1797

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia