Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

AO6808

Wahanga Tapeke: 128425

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6810

Wahanga Tapeke: 195

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOC2870

Wahanga Tapeke: 192

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOE6932

Wahanga Tapeke: 253

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 55A (Tc), 85A (Tc), Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V, 1.4 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA, 1.9V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6906A

Wahanga Tapeke: 141209

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.1A, 10A, Rds Kei (Max) @ Id, Vgs: 14.4 mOhm @ 9.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6992

Wahanga Tapeke: 167444

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, 31A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO7800

Wahanga Tapeke: 101225

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6934A

Wahanga Tapeke: 192175

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, 30A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON5816

Wahanga Tapeke: 242

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 12A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON3820

Wahanga Tapeke: 237

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Ta), Rds Kei (Max) @ Id, Vgs: 8.9 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6926

Wahanga Tapeke: 176157

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, 12A, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4616

Wahanga Tapeke: 137081

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 7A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOSD62666E

Wahanga Tapeke: 234

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A (Ta), Rds Kei (Max) @ Id, Vgs: 14.5 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4892

Wahanga Tapeke: 184805

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 68 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4832

Wahanga Tapeke: 146127

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOD607A

Wahanga Tapeke: 189762

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), 12A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8A, 10V, 27 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO9926C

Wahanga Tapeke: 121665

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4854

Wahanga Tapeke: 178118

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOE6930

Wahanga Tapeke: 215

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), 85A (Tc), Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V, 0.83 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA, 1.9V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO6608

Wahanga Tapeke: 153844

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A (Ta), 3.3A (Ta), Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA, 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6994

Wahanga Tapeke: 185070

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, 26A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6912A

Wahanga Tapeke: 191296

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, 13.8A, Rds Kei (Max) @ Id, Vgs: 13.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO8808A

Wahanga Tapeke: 192801

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON2810

Wahanga Tapeke: 115713

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 44 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO6802

Wahanga Tapeke: 113666

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON5820

Wahanga Tapeke: 177428

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON6934

Wahanga Tapeke: 185097

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, 30A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4884

Wahanga Tapeke: 124312

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO9926B

Wahanga Tapeke: 120793

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO6601

Wahanga Tapeke: 110328

Momo FET: N and P-Channel Complementary, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, 2.3A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Advanced Linear Devices Inc.

ALD212900APAL

Wahanga Tapeke: 19683

Momo FET: 2 N-Channel (Dual) Matched Pair, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 10.6V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80mA, Rds Kei (Max) @ Id, Vgs: 14 Ohm, Vgs (th) (Max) @ Id: 10mV @ 20µA,

Ki te hiahia

Advanced Linear Devices Inc.

ALD110800PCL

Wahanga Tapeke: 22645

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Max) @ Id: 20mV @ 1µA,

Ki te hiahia

Advanced Linear Devices Inc.

ALD110800ASCL

Wahanga Tapeke: 15215

Momo FET: 4 N-Channel, Matched Pair, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 10.6V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 4V, Vgs (th) (Max) @ Id: 10mV @ 1µA,

Ki te hiahia

Microsemi Corporation

APTM100H45SCTG

Wahanga Tapeke: 480

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100A13SCG

Wahanga Tapeke: 292

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A, Rds Kei (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Ki te hiahia

Microsemi Corporation

APTM50AM24SCG

Wahanga Tapeke: 372

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 150A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Ki te hiahia