Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 880mA, Rds Kei (Max) @ Id, Vgs: 490 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 100µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, Rds Kei (Max) @ Id, Vgs: 31 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 300µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 600mV @ 250µA (Min),
Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15.7A (Ta), 100A (Tc), Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, Rds Kei (Max) @ Id, Vgs: 16.5 mOhm @ 8.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 9.6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6.4A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.4A, 8A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 15.2A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 4A, 4.5V,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 450V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 700mA, Rds Kei (Max) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.7A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A, 2A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 2.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 64A, 105A, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 35µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 1µA,
