Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Vishay Siliconix

IRF634PBF

Wahanga Tapeke: 45547

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 5.1A, 10V,

Momotae

Vishay Siliconix

SIHG30N60E-GE3

Wahanga Tapeke: 10405

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRFPE30PBF

Wahanga Tapeke: 11961

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V,

Momotae

Vishay Siliconix

SIHP12N50E-GE3

Wahanga Tapeke: 76576

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V,

Momotae

SUP90P06-09L-E3

Vishay Siliconix

SUP90P06-09L-E3

Wahanga Tapeke: 11931

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V,

Momotae

Vishay Siliconix

IRFBC40APBF

Wahanga Tapeke: 35961

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V,

Momotae

Vishay Siliconix

SIHP4N80E-GE3

Wahanga Tapeke: 5297

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.27 Ohm @ 2A, 10V,

Momotae

Vishay Siliconix

IRFBE30STRLPBF

Wahanga Tapeke: 34565

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 2.5A, 10V,

Momotae

Vishay Siliconix

SIHD7N60E-GE3

Wahanga Tapeke: 33162

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

Momotae

Vishay Siliconix

IRF624PBF

Wahanga Tapeke: 79176

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 2.6A, 10V,

Momotae

Vishay Siliconix

IRF830SPBF

Wahanga Tapeke: 39890

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 2.7A, 10V,

Momotae

Vishay Siliconix

SIHP30N60E-GE3

Wahanga Tapeke: 4593

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V,

Momotae

Vishay Siliconix

IRL630PBF

Wahanga Tapeke: 28303

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V,

Momotae

Vishay Siliconix

IRF9Z14PBF

Wahanga Tapeke: 72543

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V,

Momotae

Vishay Siliconix

IRFI510GPBF

Wahanga Tapeke: 37405

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 2.7A, 10V,

Momotae

Vishay Siliconix

IRFU420APBF

Wahanga Tapeke: 42120

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.5A, 10V,

Momotae

Vishay Siliconix

IRFB9N65APBF

Wahanga Tapeke: 23332

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 930 mOhm @ 5.1A, 10V,

Momotae

Vishay Siliconix

SIHP14N60E-GE3

Wahanga Tapeke: 28218

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 309 mOhm @ 7A, 10V,

Momotae

Vishay Siliconix

IRFD9220PBF

Wahanga Tapeke: 54667

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 560mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.5 Ohm @ 340mA, 10V,

Momotae

Vishay Siliconix

IRFIBF20GPBF

Wahanga Tapeke: 24078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 720mA, 10V,

Momotae

Vishay Siliconix

IRFU1N60APBF

Wahanga Tapeke: 48177

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 840mA, 10V,

Momotae

SIHB12N60ET1-GE3

Vishay Siliconix

SIHB12N60ET1-GE3

Wahanga Tapeke: 4313

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

SIHP16N50C-E3

Wahanga Tapeke: 22735

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V,

Momotae

SIHB33N60EF-GE3

Vishay Siliconix

SIHB33N60EF-GE3

Wahanga Tapeke: 10290

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 16.5A, 10V,

Momotae

Vishay Siliconix

IRLI530GPBF

Wahanga Tapeke: 34629

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 5.8A, 5V,

Momotae

SIHP22N60AE-GE3

Vishay Siliconix

SIHP22N60AE-GE3

Wahanga Tapeke: 17671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae

Vishay Siliconix

SIHA4N80E-GE3

Wahanga Tapeke: 4358

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.27 Ohm @ 2A, 10V,

Momotae

Vishay Siliconix

SIHB35N60E-GE3

Wahanga Tapeke: 10428

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 32A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 17A, 10V,

Momotae

Vishay Siliconix

IRFI9530GPBF

Wahanga Tapeke: 38978

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 4.6A, 10V,

Momotae

Vishay Siliconix

IRFBC40LCPBF

Wahanga Tapeke: 15074

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V,

Momotae

Vishay Siliconix

IRF630STRRPBF

Wahanga Tapeke: 77116

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 10V,

Momotae

Vishay Siliconix

IRFR9210PBF

Wahanga Tapeke: 69100

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V,

Momotae

Vishay Siliconix

IRF740APBF

Wahanga Tapeke: 29433

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V,

Momotae

Vishay Siliconix

IRFD220PBF

Wahanga Tapeke: 66643

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 800mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 480mA, 10V,

Momotae

Vishay Siliconix

IRFI9Z14GPBF

Wahanga Tapeke: 65760

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V,

Momotae

Vishay Siliconix

IRF9Z24SPBF

Wahanga Tapeke: 39856

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V,

Momotae

3600

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