Transistors - Bipolar (BJT) - Takitahi, Mua-rawe | Nga Hua Semiconductor Motuhake | 6

RN1112(T5L,F,T)

Wahanga Tapeke: 1924

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1106,LF(CT

Wahanga Tapeke: 126227

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1101CT(TPL3)

Wahanga Tapeke: 1912

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2315TE85LF

Wahanga Tapeke: 100188

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1112ACT(TPL3)

Wahanga Tapeke: 1954

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2101ACT(TPL3)

Wahanga Tapeke: 1987

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1105CT(TPL3)

Wahanga Tapeke: 1976

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2105CT(TPL3)

Wahanga Tapeke: 1970

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1111CT(TPL3)

Wahanga Tapeke: 1984

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1109ACT(TPL3)

Wahanga Tapeke: 2177

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1103ACT(TPL3)

Wahanga Tapeke: 1902

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2404,LF

Wahanga Tapeke: 9904

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1306,LF

Wahanga Tapeke: 116634

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1444ATE85LF

Wahanga Tapeke: 1960

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 300mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Momotae

Toshiba Semiconductor and Storage

RN1107ACT(TPL3)

Wahanga Tapeke: 2029

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2110CT(TPL3)

Wahanga Tapeke: 1997

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2107MFV,L3F

Wahanga Tapeke: 128621

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1107CT(TPL3)

Wahanga Tapeke: 1985

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1109MFV,L3F

Wahanga Tapeke: 1935

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1112CT(TPL3)

Wahanga Tapeke: 1956

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1113CT(TPL3)

Wahanga Tapeke: 2014

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1102,LF(CT

Wahanga Tapeke: 176393

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1113(T5L,F,T)

Wahanga Tapeke: 158736

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1308,LF

Wahanga Tapeke: 147458

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2106CT(TPL3)

Wahanga Tapeke: 1999

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1106MFV(TL3,T)

Wahanga Tapeke: 1905

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2117(T5L,F,T)

Wahanga Tapeke: 1959

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2109CT(TPL3)

Wahanga Tapeke: 1945

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2316(TE85L,F)

Wahanga Tapeke: 159037

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2102CT(TPL3)

Wahanga Tapeke: 1965

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2107CT(TPL3)

Wahanga Tapeke: 1933

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2101CT(TPL3)

Wahanga Tapeke: 3234

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1117(T5L,F,T)

Wahanga Tapeke: 1981

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1305,LF

Wahanga Tapeke: 184462

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN2106ACT(TPL3)

Wahanga Tapeke: 140630

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae

Toshiba Semiconductor and Storage

RN1101MFV,L3F

Wahanga Tapeke: 164879

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae