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Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

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  • Transistors - Bipolar (BJT) - Takitahi, Mua-rawe
RN2404TE85LF
Toshiba Semiconductor and Storage

RN2404TE85LF

Wahanga Tapeke: 1976

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1402S,LF
Toshiba Semiconductor and Storage

RN1402S,LF

Wahanga Tapeke: 1953

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN2104MFV,L3F
Toshiba Semiconductor and Storage

RN2104MFV,L3F

Wahanga Tapeke: 1980

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2402S,LF(D
Toshiba Semiconductor and Storage

RN2402S,LF(D

Wahanga Tapeke: 1961

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN2106(T5L,F,T)
Toshiba Semiconductor and Storage

RN2106(T5L,F,T)

Wahanga Tapeke: 1986

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1104CT(TPL3)
Toshiba Semiconductor and Storage

RN1104CT(TPL3)

Wahanga Tapeke: 1925

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae
RN2111CT(TPL3)
Toshiba Semiconductor and Storage

RN2111CT(TPL3)

Wahanga Tapeke: 2043

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae
RN1105ACT(TPL3)
Toshiba Semiconductor and Storage

RN1105ACT(TPL3)

Wahanga Tapeke: 1932

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1406S,LF(D
Toshiba Semiconductor and Storage

RN1406S,LF(D

Wahanga Tapeke: 1944

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1108(T5L,F,T)
Toshiba Semiconductor and Storage

RN1108(T5L,F,T)

Wahanga Tapeke: 2027

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2108ACT(TPL3)
Toshiba Semiconductor and Storage

RN2108ACT(TPL3)

Wahanga Tapeke: 1975

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1316,LF
Toshiba Semiconductor and Storage

RN1316,LF

Wahanga Tapeke: 199880

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN2113CT(TPL3)
Toshiba Semiconductor and Storage

RN2113CT(TPL3)

Wahanga Tapeke: 1959

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V,

Momotae
RN1108ACT(TPL3)
Toshiba Semiconductor and Storage

RN1108ACT(TPL3)

Wahanga Tapeke: 1901

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2112,LF(CT
Toshiba Semiconductor and Storage

RN2112,LF(CT

Wahanga Tapeke: 9941

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae
RN2103MFV,L3F
Toshiba Semiconductor and Storage

RN2103MFV,L3F

Wahanga Tapeke: 1966

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Momotae
RN1103CT(TPL3)
Toshiba Semiconductor and Storage

RN1103CT(TPL3)

Wahanga Tapeke: 1955

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Momotae
RN1413(TE85L,F)
Toshiba Semiconductor and Storage

RN1413(TE85L,F)

Wahanga Tapeke: 169265

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae
RN1111ACT(TPL3)
Toshiba Semiconductor and Storage

RN1111ACT(TPL3)

Wahanga Tapeke: 1945

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae
RN2118(T5L,F,T)
Toshiba Semiconductor and Storage

RN2118(T5L,F,T)

Wahanga Tapeke: 1956

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN1108CT(TPL3)
Toshiba Semiconductor and Storage

RN1108CT(TPL3)

Wahanga Tapeke: 1979

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae
RN1106ACT(TPL3)
Toshiba Semiconductor and Storage

RN1106ACT(TPL3)

Wahanga Tapeke: 2028

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2102ACT(TPL3)
Toshiba Semiconductor and Storage

RN2102ACT(TPL3)

Wahanga Tapeke: 1977

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN2104CT(TPL3)
Toshiba Semiconductor and Storage

RN2104CT(TPL3)

Wahanga Tapeke: 1987

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae
RN1109CT(TPL3)
Toshiba Semiconductor and Storage

RN1109CT(TPL3)

Wahanga Tapeke: 1950

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Momotae
RN2104ACT(TPL3)
Toshiba Semiconductor and Storage

RN2104ACT(TPL3)

Wahanga Tapeke: 2045

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2103CT(TPL3)
Toshiba Semiconductor and Storage

RN2103CT(TPL3)

Wahanga Tapeke: 3230

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V,

Momotae
RN1104ACT(TPL3)
Toshiba Semiconductor and Storage

RN1104ACT(TPL3)

Wahanga Tapeke: 1956

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN2303(TE85L,F)
Toshiba Semiconductor and Storage

RN2303(TE85L,F)

Wahanga Tapeke: 126325

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V,

Momotae
RN2107ACT(TPL3)
Toshiba Semiconductor and Storage

RN2107ACT(TPL3)

Wahanga Tapeke: 2063

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V,

Momotae
RN1441ATE85LF
Toshiba Semiconductor and Storage

RN1441ATE85LF

Wahanga Tapeke: 176769

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 300mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 5.6 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V,

Momotae
RN2108CT(TPL3)
Toshiba Semiconductor and Storage

RN2108CT(TPL3)

Wahanga Tapeke: 2026

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 20V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V,

Momotae
RN1101ACT(TPL3)
Toshiba Semiconductor and Storage

RN1101ACT(TPL3)

Wahanga Tapeke: 1962

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 80mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V,

Momotae
RN1102MFV,L3F
Toshiba Semiconductor and Storage

RN1102MFV,L3F

Wahanga Tapeke: 120698

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN1414,LF
Toshiba Semiconductor and Storage

RN1414,LF

Wahanga Tapeke: 112225

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 1 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V,

Momotae
RN2313(TE85L,F)
Toshiba Semiconductor and Storage

RN2313(TE85L,F)

Wahanga Tapeke: 163677

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V,

Momotae