Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 7

APTM100DU18TG

Wahanga Tapeke: 2809

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM100DDA35T3G

Wahanga Tapeke: 2731

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTM100A46FT1G

Wahanga Tapeke: 2813

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, Rds Kei (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTM100A40FT1G

Wahanga Tapeke: 2805

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTM100A12STG

Wahanga Tapeke: 2822

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 68A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Momotae

Microsemi Corporation

APTM100A23SCTG

Wahanga Tapeke: 2760

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM08TDUM04PG

Wahanga Tapeke: 2746

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Momotae

Microsemi Corporation

APTC80H29T1G

Wahanga Tapeke: 2742

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Momotae

Microsemi Corporation

APTC80DSK29T3G

Wahanga Tapeke: 2793

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Momotae

Microsemi Corporation

APTC80H29SCTG

Wahanga Tapeke: 1092

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Momotae

Microsemi Corporation

APTC80DDA29T3G

Wahanga Tapeke: 2788

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Momotae

Microsemi Corporation

APTC80A15T1G

Wahanga Tapeke: 2799

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Momotae

Microsemi Corporation

APTC80AM75SCG

Wahanga Tapeke: 594

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 4mA,

Momotae

Microsemi Corporation

APTC80A10SCTG

Wahanga Tapeke: 863

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Momotae

Microsemi Corporation

APTC60DSKM70T3G

Wahanga Tapeke: 2751

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

APTC60DSKM35T3G

Wahanga Tapeke: 2727

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Momotae

Microsemi Corporation

APTC60DDAM70T3G

Wahanga Tapeke: 2741

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

APTC60AM70T1G

Wahanga Tapeke: 2769

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

JANTXV2N7334

Wahanga Tapeke: 2993

Momo FET: 4 N-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Microsemi Corporation

JANTX2N7335

Wahanga Tapeke: 2875

Momo FET: 4 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Microsemi Corporation

JAN2N7335

Wahanga Tapeke: 2942

Momo FET: 4 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Microsemi Corporation

JAN2N7334

Wahanga Tapeke: 2865

Momo FET: 4 N-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Microsemi Corporation

JANTXV2N7335

Wahanga Tapeke: 2903

Momo FET: 4 P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 750mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae

Microsemi Corporation

JANTX2N7334

Wahanga Tapeke: 2911

Momo FET: 4 N-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Momotae