Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 7

APTM10TAM19FPG

Wahanga Tapeke: 905

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Momotae

Microsemi Corporation

APTC60TAM35PG

Wahanga Tapeke: 622

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Momotae

Microsemi Corporation

APTM20AM10STG

Wahanga Tapeke: 814

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTC60HM70SCTG

Wahanga Tapeke: 825

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

APTM20HM20STG

Wahanga Tapeke: 874

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 89A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTC60AM35T1G

Wahanga Tapeke: 1737

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Momotae

Microsemi Corporation

APTM120A20SG

Wahanga Tapeke: 517

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Momotae

Microsemi Corporation

APTMC60TLM14CAG

Wahanga Tapeke: 121

Momo FET: 4 N-Channel (Three Level Inverter), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 219A (Tc), Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Momotae

Microsemi Corporation

APTM20DUM04G

Wahanga Tapeke: 485

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 372A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Momotae

Microsemi Corporation

APTMC120AM12CT3AG

Wahanga Tapeke: 202

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220A (Tc), Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Momotae

Microsemi Corporation

APTC60TAM21SCTPAG

Wahanga Tapeke: 341

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 116A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 88A, 10V, Vgs (th) (Max) @ Id: 3.6V @ 6mA,

Momotae

Microsemi Corporation

APTM100A23STG

Wahanga Tapeke: 772

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTC60AM24T1G

Wahanga Tapeke: 1322

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Momotae

Microsemi Corporation

APTMC120TAM17CTPAG

Wahanga Tapeke: 81

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 147A (Tc), Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 20mA (Typ),

Momotae

Microsemi Corporation

APTM60H23FT1G

Wahanga Tapeke: 2039

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Momotae

Microsemi Corporation

APTM50AM38FTG

Wahanga Tapeke: 808

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM120A29FTG

Wahanga Tapeke: 635

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A, Rds Kei (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM50DHM38G

Wahanga Tapeke: 726

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM20DUM08TG

Wahanga Tapeke: 866

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 208A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTM10AM02FG

Wahanga Tapeke: 400

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 495A, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,

Momotae

Microsemi Corporation

APTM10DSKM09T3G

Wahanga Tapeke: 1457

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Momotae

Microsemi Corporation

APTC60BBM24T3G

Wahanga Tapeke: 1133

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Momotae

Microsemi Corporation

APTML602U12R020T3AG

Wahanga Tapeke: 485

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Momotae

Microsemi Corporation

APTC60HM70BT3G

Wahanga Tapeke: 1289

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

APTM20HM16FTG

Wahanga Tapeke: 748

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 104A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTM20AM10FTG

Wahanga Tapeke: 856

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Momotae

Microsemi Corporation

APTMC120AM09CT3AG

Wahanga Tapeke: 162

Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 295A (Tc), Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 40mA (Typ),

Momotae

Microsemi Corporation

APTC60DDAM70T1G

Wahanga Tapeke: 2258

Momo FET: 2 N Channel (Dual Buck Chopper), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Momotae

Microsemi Corporation

APTC60AM45BC1G

Wahanga Tapeke: 1478

Momo FET: 3 N Channel (Phase Leg + Boost Chopper), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Momotae

Microsemi Corporation

APTM10TAM09FPG

Wahanga Tapeke: 558

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Momotae

Microsemi Corporation

APTM100DSK35T3G

Wahanga Tapeke: 1267

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTC60AM45B1G

Wahanga Tapeke: 1093

Momo FET: 3 N Channel (Phase Leg + Boost Chopper), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Momotae

Microsemi Corporation

APTM100H46FT3G

Wahanga Tapeke: 1492

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, Rds Kei (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTM50HM75FTG

Wahanga Tapeke: 809

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Momotae

Microsemi Corporation

APTC60HM24T3G

Wahanga Tapeke: 757

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Momotae

Microsemi Corporation

APTM100AM90FG

Wahanga Tapeke: 379

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Momotae