Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 99A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 99A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A, Rds Kei (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,
Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,
Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,
Momo FET: 4 N-Channel, Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 147A (Tc), Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 4V @ 30mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 495A, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V, Vgs (th) (Max) @ Id: 4V @ 10mA,
Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1700V (1.7kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 50A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 2.5mA (Typ),
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34A, Rds Kei (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 278A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,
Momo FET: 2 N Channel (Phase Leg), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1700V (1.7kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 5mA (Typ),
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 208A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 317A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A, Rds Kei (Max) @ Id, Vgs: 83 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 175A, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 22.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,
