Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

IRF7601TRPBF

Wahanga Tapeke: 135832

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.7V, 4.5V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 3.8A, 4.5V,

Momotae

Infineon Technologies

IPD12CNE8N G

Wahanga Tapeke: 763

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 85V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 67A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V,

Momotae

Infineon Technologies

IRFS4615PBF

Wahanga Tapeke: 833

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V,

Momotae

SPS03N60C3BKMA1

Infineon Technologies

SPS03N60C3BKMA1

Wahanga Tapeke: 124014

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V,

Momotae

Infineon Technologies

SPB100N03S203T

Wahanga Tapeke: 39342

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V,

Momotae

IPP100N04S2L03AKSA1

Infineon Technologies

IPP100N04S2L03AKSA1

Wahanga Tapeke: 842

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRFH8201TRPBF

Wahanga Tapeke: 95587

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 0.95 mOhm @ 50A, 10V,

Momotae

IPD50N06S214ATMA1

Infineon Technologies

IPD50N06S214ATMA1

Wahanga Tapeke: 826

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 14.4 mOhm @ 32A, 10V,

Momotae

Infineon Technologies

IPB08CN10N G

Wahanga Tapeke: 758

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V,

Momotae

Infineon Technologies

IRFR4615PBF

Wahanga Tapeke: 95865

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V,

Momotae

Infineon Technologies

IRFB4321GPBF

Wahanga Tapeke: 852

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 83A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V,

Momotae

IPB80N04S204ATMA1

Infineon Technologies

IPB80N04S204ATMA1

Wahanga Tapeke: 745

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V,

Momotae

IPI80N03S4L04AKSA1

Infineon Technologies

IPI80N03S4L04AKSA1

Wahanga Tapeke: 750

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRF8252TRPBF

Wahanga Tapeke: 600

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V,

Momotae

Infineon Technologies

IRLB8721PBF

Wahanga Tapeke: 67229

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 62A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 31A, 10V,

Momotae

Infineon Technologies

IRF7739L1TRPBF

Wahanga Tapeke: 29691

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A (Ta), 270A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 mOhm @ 160A, 10V,

Momotae

Infineon Technologies

IPI08CNE8N G

Wahanga Tapeke: 6123

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 85V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6.4 mOhm @ 95A, 10V,

Momotae

Infineon Technologies

IRLS3036-7PPBF

Wahanga Tapeke: 13929

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V,

Momotae

Infineon Technologies

IPU075N03L G

Wahanga Tapeke: 817

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V,

Momotae

IPP100P03P3L-04

Infineon Technologies

IPP100P03P3L-04

Wahanga Tapeke: 793

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRL100HS121

Wahanga Tapeke: 13281

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 6.7A, 10V,

Momotae

IPP16CN10LGXKSA1

Infineon Technologies

IPP16CN10LGXKSA1

Wahanga Tapeke: 838

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 54A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 15.7 mOhm @ 54A, 10V,

Momotae

Infineon Technologies

IRF7413TRPBF

Wahanga Tapeke: 174562

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V,

Momotae

IRFR3707ZTRRPBF

Infineon Technologies

IRFR3707ZTRRPBF

Wahanga Tapeke: 545

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V,

Momotae

IPZ65R045C7XKSA1

Infineon Technologies

IPZ65R045C7XKSA1

Wahanga Tapeke: 5179

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V,

Momotae

Infineon Technologies

IRLR8503TRLPBF

Wahanga Tapeke: 563

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IRF2804S-7PPBF

Wahanga Tapeke: 12545

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V,

Momotae

Infineon Technologies

IRFR3412TRLPBF

Wahanga Tapeke: 572

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 29A, 10V,

Momotae

Infineon Technologies

IRF6722STR1PBF

Wahanga Tapeke: 572

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), 58A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.3 mOhm @ 13A, 10V,

Momotae

IRFR3706CTRRPBF

Infineon Technologies

IRFR3706CTRRPBF

Wahanga Tapeke: 504

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IRFR3418PBF

Wahanga Tapeke: 518

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V,

Momotae

Infineon Technologies

IRF6714MTR1PBF

Wahanga Tapeke: 537

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 29A (Ta), 166A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V,

Momotae

Infineon Technologies

IRLU8743PBF

Wahanga Tapeke: 44169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V,

Momotae

Infineon Technologies

IRF3711ZCSTRRP

Wahanga Tapeke: 571

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 92A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IRF6620TRPBF

Wahanga Tapeke: 50617

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Ta), 150A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 27A, 10V,

Momotae

Infineon Technologies

IRLR3717TRLPBF

Wahanga Tapeke: 553

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V,

Momotae

3600

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