Transistors - FETs, MOSFETs - Kotahi

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Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

IRF6713STR1PBF

Wahanga Tapeke: 609

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 95A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V,

Momotae

IPP80N06S205AKSA1

Infineon Technologies

IPP80N06S205AKSA1

Wahanga Tapeke: 792

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRFSL4115PBF

Wahanga Tapeke: 861

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12.1 mOhm @ 62A, 10V,

Momotae

Infineon Technologies

SN7002W L6327

Wahanga Tapeke: 839

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V,

Momotae

Infineon Technologies

IRFR3910TRPBF

Wahanga Tapeke: 188719

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 115 mOhm @ 10A, 10V,

Momotae

Infineon Technologies

IPU103N08N3 G

Wahanga Tapeke: 813

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 10.3 mOhm @ 46A, 10V,

Momotae

Infineon Technologies

IRFP4368PBF

Wahanga Tapeke: 9954

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.85 mOhm @ 195A, 10V,

Momotae

IPB34CN10NGATMA1

Infineon Technologies

IPB34CN10NGATMA1

Wahanga Tapeke: 809

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 27A, 10V,

Momotae

IPD160N04LGBTMA1

Infineon Technologies

IPD160N04LGBTMA1

Wahanga Tapeke: 818

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

IRFS4010-7PPBF

Wahanga Tapeke: 629

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 190A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V,

Momotae

Infineon Technologies

IPD50R520CP

Wahanga Tapeke: 6089

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V,

Momotae

Infineon Technologies

IRFS5620TRLPBF

Wahanga Tapeke: 640

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 77.5 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IRF7450TRPBF

Wahanga Tapeke: 105126

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 1.5A, 10V,

Momotae

IPB100N06S205ATMA1

Infineon Technologies

IPB100N06S205ATMA1

Wahanga Tapeke: 804

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRFH7914TR2PBF

Wahanga Tapeke: 834

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V,

Momotae

IPB80N06S2H5ATMA1

Infineon Technologies

IPB80N06S2H5ATMA1

Wahanga Tapeke: 808

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IRFH5053TRPBF

Wahanga Tapeke: 87092

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.3A (Ta), 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V,

Momotae

Infineon Technologies

IRF6729MTR1PBF

Wahanga Tapeke: 821

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), 190A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 31A, 10V,

Momotae

IPI80N04S204AKSA1

Infineon Technologies

IPI80N04S204AKSA1

Wahanga Tapeke: 840

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V,

Momotae

IPI80N06S2L05AKSA1

Infineon Technologies

IPI80N06S2L05AKSA1

Wahanga Tapeke: 750

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.8 mOhm @ 80A, 10V,

Momotae

IPB80N06S209ATMA1

Infineon Technologies

IPB80N06S209ATMA1

Wahanga Tapeke: 6080

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V,

Momotae

SPP15N60CFDHKSA1

Infineon Technologies

SPP15N60CFDHKSA1

Wahanga Tapeke: 768

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 330 mOhm @ 9.4A, 10V,

Momotae

Infineon Technologies

IRF40R207

Wahanga Tapeke: 112715

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 55A, 10V,

Momotae

IPD068N10N3GBTMA1

Infineon Technologies

IPD068N10N3GBTMA1

Wahanga Tapeke: 759

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 90A, 10V,

Momotae

Infineon Technologies

IRFHS8342TRPBF

Wahanga Tapeke: 198501

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.8A (Ta), 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 8.5A, 10V,

Momotae

IRFR15N20DTRPBF

Infineon Technologies

IRFR15N20DTRPBF

Wahanga Tapeke: 131500

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V,

Momotae

Infineon Technologies

IRLR8256TRPBF

Wahanga Tapeke: 172098

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 81A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V,

Momotae

Infineon Technologies

IRFSL3004PBF

Wahanga Tapeke: 869

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V,

Momotae

IPB60R250CPATMA1

Infineon Technologies

IPB60R250CPATMA1

Wahanga Tapeke: 785

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V,

Momotae

IPB80N06S2L09ATMA1

Infineon Technologies

IPB80N06S2L09ATMA1

Wahanga Tapeke: 6112

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.2 mOhm @ 52A, 10V,

Momotae

Infineon Technologies

IRFU4620PBF

Wahanga Tapeke: 6147

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 78 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IPB12CN10N G

Wahanga Tapeke: 756

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 67A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12.6 mOhm @ 67A, 10V,

Momotae

Infineon Technologies

IRF7201TRPBF

Wahanga Tapeke: 109705

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.3A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V,

Momotae

IPP80N06S208AKSA1

Infineon Technologies

IPP80N06S208AKSA1

Wahanga Tapeke: 809

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 58A, 10V,

Momotae

Infineon Technologies

IRLH7134TRPBF

Wahanga Tapeke: 103354

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 26A (Ta), 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

IRF7809AVTRPBF

Wahanga Tapeke: 163838

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V,

Momotae

3600

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