Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

IPB12CNE8N G

Wahanga Tapeke: 763

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 85V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 67A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V,

Momotae

Infineon Technologies

IPD80N06S3-09

Wahanga Tapeke: 831

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 8.4 mOhm @ 40A, 10V,

Momotae

Infineon Technologies

IPP147N03L G

Wahanga Tapeke: 630

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V,

Momotae

Infineon Technologies

IRFR3709ZTRPBF

Wahanga Tapeke: 164540

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 86A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V,

Momotae

Infineon Technologies

IPD16CNE8N G

Wahanga Tapeke: 789

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 85V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 53A, 10V,

Momotae

IPI80N03S4L03AKSA1

Infineon Technologies

IPI80N03S4L03AKSA1

Wahanga Tapeke: 72486

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V,

Momotae

IPI139N08N3GHKSA1

Infineon Technologies

IPI139N08N3GHKSA1

Wahanga Tapeke: 801

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 13.9 mOhm @ 45A, 10V,

Momotae

Infineon Technologies

IRF7703TRPBF

Wahanga Tapeke: 683

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V,

Momotae

IPA60R250CPXKSA1

Infineon Technologies

IPA60R250CPXKSA1

Wahanga Tapeke: 39633

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V,

Momotae

IPB50R250CPATMA1

Infineon Technologies

IPB50R250CPATMA1

Wahanga Tapeke: 58237

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 550V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 7.8A, 10V,

Momotae

IPB065N15N3GATMA1

Infineon Technologies

IPB065N15N3GATMA1

Wahanga Tapeke: 13275

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 130A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V,

Momotae

Infineon Technologies

IRFH5004TRPBF

Wahanga Tapeke: 82938

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 50A, 10V,

Momotae

IPP80N06S209AKSA1

Infineon Technologies

IPP80N06S209AKSA1

Wahanga Tapeke: 815

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

IRFH7084TRPBF

Wahanga Tapeke: 71052

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.25 mOhm @ 100A, 10V,

Momotae

Infineon Technologies

IRF7779L2TRPBF

Wahanga Tapeke: 27078

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 375A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V,

Momotae

Infineon Technologies

IPU135N08N3 G

Wahanga Tapeke: 6136

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 50A, 10V,

Momotae

Infineon Technologies

IRFB3004GPBF

Wahanga Tapeke: 6094

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 195A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.75 mOhm @ 195A, 10V,

Momotae

Infineon Technologies

IPB26CNE8N G

Wahanga Tapeke: 807

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 85V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V,

Momotae

Infineon Technologies

IPI26CN10N G

Wahanga Tapeke: 804

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 35A, 10V,

Momotae

Infineon Technologies

IRFR220NTRPBF

Wahanga Tapeke: 124498

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V,

Momotae

Infineon Technologies

IRF8721GPBF

Wahanga Tapeke: 904

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.5 mOhm @ 14A, 10V,

Momotae

IPI030N10N3GHKSA1

Infineon Technologies

IPI030N10N3GHKSA1

Wahanga Tapeke: 821

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 100A, 10V,

Momotae

IPS090N03LGAKMA1

Infineon Technologies

IPS090N03LGAKMA1

Wahanga Tapeke: 687

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Momotae

IPP260N06N3GXKSA1

Infineon Technologies

IPP260N06N3GXKSA1

Wahanga Tapeke: 807

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 27A, 10V,

Momotae

IPI60R600CPAKSA1

Infineon Technologies

IPI60R600CPAKSA1

Wahanga Tapeke: 5696

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.3A, 10V,

Momotae

IPB017N10N5ATMA1

Infineon Technologies

IPB017N10N5ATMA1

Wahanga Tapeke: 18472

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V,

Momotae

Infineon Technologies

IPP096N03L G

Wahanga Tapeke: 647

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V,

Momotae

Infineon Technologies

IRFH8334TRPBF

Wahanga Tapeke: 159705

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A (Ta), 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V,

Momotae

IPD135N08N3GBTMA1

Infineon Technologies

IPD135N08N3GBTMA1

Wahanga Tapeke: 820

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 45A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 13.5 mOhm @ 45A, 10V,

Momotae

Infineon Technologies

IRFH5300TRPBF

Wahanga Tapeke: 123896

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V,

Momotae

IPP80N06S2H5AKSA1

Infineon Technologies

IPP80N06S2H5AKSA1

Wahanga Tapeke: 778

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V,

Momotae

Infineon Technologies

IPB16CN10N G

Wahanga Tapeke: 745

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16.5 mOhm @ 53A, 10V,

Momotae

Infineon Technologies

IPP80N06S2L-07

Wahanga Tapeke: 49543

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V,

Momotae

IPW90R1K0C3FKSA1

Infineon Technologies

IPW90R1K0C3FKSA1

Wahanga Tapeke: 38771

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V,

Momotae

Infineon Technologies

IPI80CN10N G

Wahanga Tapeke: 6157

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 13A, 10V,

Momotae

Infineon Technologies

IRFSL4020PBF

Wahanga Tapeke: 868

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 11A, 10V,

Momotae

3600

«
70
71
72
73
74
75
76
77
78
79
»