Transistors - FETs, MOSFETs - Kotahi

Kāinga
Transistors - FETs, MOSFETs - Kotahi

Infineon Technologies

BSS138N E8004

Wahanga Tapeke: 164

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Momotae

Infineon Technologies

BSS138N E7854

Wahanga Tapeke: 6034

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Momotae

Infineon Technologies

BSS138N E6908

Wahanga Tapeke: 6083

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Momotae

Infineon Technologies

BSS138N E6433

Wahanga Tapeke: 174

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Momotae

Infineon Technologies

BSS127 E6327

Wahanga Tapeke: 172

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae

Infineon Technologies

BSS126 E6906

Wahanga Tapeke: 106

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae

Infineon Technologies

BSS126 E6327

Wahanga Tapeke: 152

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae

Infineon Technologies

BSS123L7874XT

Wahanga Tapeke: 161

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSS119 E7978

Wahanga Tapeke: 169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSS123 E6433

Wahanga Tapeke: 169

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSS119 E7796

Wahanga Tapeke: 122

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSS119 E6433

Wahanga Tapeke: 145

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSP92P E6327

Wahanga Tapeke: 140

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Momotae

Infineon Technologies

BSP615S2L

Wahanga Tapeke: 129

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 1.4A, 10V,

Momotae

Infineon Technologies

BSP613P

Wahanga Tapeke: 153

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V,

Momotae

Infineon Technologies

BSP373 E6327

Wahanga Tapeke: 119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V,

Momotae

Infineon Technologies

BSP324 E6327

Wahanga Tapeke: 172

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V,

Momotae

Infineon Technologies

BSP372 E6327

Wahanga Tapeke: 155

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V,

Momotae

Infineon Technologies

BSP320S E6433

Wahanga Tapeke: 110

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Momotae

Infineon Technologies

BSP320S E6327

Wahanga Tapeke: 88

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Momotae

BSP300L6327HUSA1

Infineon Technologies

BSP300L6327HUSA1

Wahanga Tapeke: 138

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 190mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

Momotae

Infineon Technologies

BSP318S E6327

Wahanga Tapeke: 158

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V,

Momotae

Infineon Technologies

BSP300 E6327

Wahanga Tapeke: 95

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 190mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 20 Ohm @ 190mA, 10V,

Momotae

Infineon Technologies

BSP299 E6327

Wahanga Tapeke: 166

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 400mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 400mA, 10V,

Momotae

Infineon Technologies

BSP298 E6327

Wahanga Tapeke: 6031

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Momotae

BSP298L6327HUSA1

Infineon Technologies

BSP298L6327HUSA1

Wahanga Tapeke: 5657

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 500mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V,

Momotae

Infineon Technologies

BSP296 E6433

Wahanga Tapeke: 127

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V,

Momotae

Infineon Technologies

BSP297 E6327

Wahanga Tapeke: 144

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Momotae

Infineon Technologies

BSP149 E6906

Wahanga Tapeke: 78

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Momotae

BSP149L6906HTSA1

Infineon Technologies

BSP149L6906HTSA1

Wahanga Tapeke: 6023

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Momotae

Infineon Technologies

BSP149 E6327

Wahanga Tapeke: 156

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 660mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10V,

Momotae

BSP135L6906HTSA1

Infineon Technologies

BSP135L6906HTSA1

Wahanga Tapeke: 6085

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Momotae

BSP135L6327HTSA1

Infineon Technologies

BSP135L6327HTSA1

Wahanga Tapeke: 106

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Momotae

Infineon Technologies

BSP135 E6906

Wahanga Tapeke: 6091

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Momotae

Infineon Technologies

BSP135 E6327

Wahanga Tapeke: 155

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V,

Momotae

BSP129L6906HTSA1

Infineon Technologies

BSP129L6906HTSA1

Wahanga Tapeke: 84

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Momotae

3600

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