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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
BSC0906NSATMA1
Infineon Technologies

BSC0906NSATMA1

Wahanga Tapeke: 186905

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V,

Momotae
BSZ068N06NSATMA1
Infineon Technologies

BSZ068N06NSATMA1

Wahanga Tapeke: 182964

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V,

Momotae
BSC090N03LSGATMA1
Infineon Technologies

BSC090N03LSGATMA1

Wahanga Tapeke: 170812

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A (Ta), 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V,

Momotae
BSC014N04LSTATMA1
Infineon Technologies

BSC014N04LSTATMA1

Wahanga Tapeke: 16515

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V,

Momotae
BSZ086P03NS3EGATMA1
Infineon Technologies

BSZ086P03NS3EGATMA1

Wahanga Tapeke: 16570

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.5A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 8.6 mOhm @ 20A, 10V,

Momotae
BSC014N04LSIATMA1
Infineon Technologies

BSC014N04LSIATMA1

Wahanga Tapeke: 61407

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 31A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.45 mOhm @ 50A, 10V,

Momotae
BSC160N15NS5ATMA1
Infineon Technologies

BSC160N15NS5ATMA1

Wahanga Tapeke: 72783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 8V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 28A, 10V,

Momotae
BSC026NE2LS5ATMA1
Infineon Technologies

BSC026NE2LS5ATMA1

Wahanga Tapeke: 154580

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Ta), 82A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V,

Momotae
BSC0901NSATMA1
Infineon Technologies

BSC0901NSATMA1

Wahanga Tapeke: 16599

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.9 mOhm @ 30A, 10V,

Momotae
BSZ088N03LSGATMA1
Infineon Technologies

BSZ088N03LSGATMA1

Wahanga Tapeke: 162357

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8.8 mOhm @ 20A, 10V,

Momotae
BSZ0589NSATMA1
Infineon Technologies

BSZ0589NSATMA1

Wahanga Tapeke: 152540

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.4 mOhm @ 8A, 10V,

Momotae
BSC020N03MSGATMA1
Infineon Technologies

BSC020N03MSGATMA1

Wahanga Tapeke: 118300

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V,

Momotae
BSC036NE7NS3GATMA1
Infineon Technologies

BSC036NE7NS3GATMA1

Wahanga Tapeke: 50526

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V,

Momotae
BSC010N04LSTATMA1
Infineon Technologies

BSC010N04LSTATMA1

Wahanga Tapeke: 16526

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1 mOhm @ 50A, 10V,

Momotae
BSC097N06NSATMA1
Infineon Technologies

BSC097N06NSATMA1

Wahanga Tapeke: 179136

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 46A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 9.7 mOhm @ 40A, 10V,

Momotae
BSC900N20NS3GATMA1
Infineon Technologies

BSC900N20NS3GATMA1

Wahanga Tapeke: 16593

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 7.6A, 10V,

Momotae
BSZ165N04NSGATMA1
Infineon Technologies

BSZ165N04NSGATMA1

Wahanga Tapeke: 16510

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.9A (Ta), 31A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16.5 mOhm @ 20A, 10V,

Momotae
BSC130P03LSGAUMA1
Infineon Technologies

BSC130P03LSGAUMA1

Wahanga Tapeke: 16579

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 22.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 22.5A, 10V,

Momotae
BSZ0909NSATMA1
Infineon Technologies

BSZ0909NSATMA1

Wahanga Tapeke: 159981

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 34V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 36A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V,

Momotae
BSZ088N03MSGATMA1
Infineon Technologies

BSZ088N03MSGATMA1

Wahanga Tapeke: 143671

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V,

Momotae
BSB014N04LX3GXUMA1
Infineon Technologies

BSB014N04LX3GXUMA1

Wahanga Tapeke: 16560

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Ta), 180A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 30A, 10V,

Momotae
BSZ018NE2LSIATMA1
Infineon Technologies

BSZ018NE2LSIATMA1

Wahanga Tapeke: 16507

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V,

Momotae
BSC882N03LSGATMA1
Infineon Technologies

BSC882N03LSGATMA1

Wahanga Tapeke: 146645

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 34V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 30A, 10V,

Momotae
BSZ075N08NS5ATMA1
Infineon Technologies

BSZ075N08NS5ATMA1

Wahanga Tapeke: 125045

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

Momotae
BSB013NE2LXIXUMA1
Infineon Technologies

BSB013NE2LXIXUMA1

Wahanga Tapeke: 16579

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A (Ta), 163A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.3 mOhm @ 30A, 10V,

Momotae
BSC024NE2LSATMA1
Infineon Technologies

BSC024NE2LSATMA1

Wahanga Tapeke: 16599

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 10V,

Momotae
BSC025N03MSGATMA1
Infineon Technologies

BSC025N03MSGATMA1

Wahanga Tapeke: 143497

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta). 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V,

Momotae
BSC120N03LSGATMA1
Infineon Technologies

BSC120N03LSGATMA1

Wahanga Tapeke: 105622

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Ta), 39A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V,

Momotae
BSC034N03LSGATMA1
Infineon Technologies

BSC034N03LSGATMA1

Wahanga Tapeke: 197142

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V,

Momotae
BSC017N04NSGATMA1
Infineon Technologies

BSC017N04NSGATMA1

Wahanga Tapeke: 16503

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V,

Momotae
BSB028N06NN3GXUMA1
Infineon Technologies

BSB028N06NN3GXUMA1

Wahanga Tapeke: 16573

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Ta), 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V,

Momotae
BSC030N03LSGATMA1
Infineon Technologies

BSC030N03LSGATMA1

Wahanga Tapeke: 181445

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Ta), 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V,

Momotae
BSZ100N03MSGATMA1
Infineon Technologies

BSZ100N03MSGATMA1

Wahanga Tapeke: 155577

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V,

Momotae
BSP320SH6327XTSA1
Infineon Technologies

BSP320SH6327XTSA1

Wahanga Tapeke: 127092

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A (Tj), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V,

Momotae
BSC060N10NS3GATMA1
Infineon Technologies

BSC060N10NS3GATMA1

Wahanga Tapeke: 71214

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14.9A (Ta), 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V,

Momotae
BUZ73L
Infineon Technologies

BUZ73L

Wahanga Tapeke: 92

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 5V, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V,

Momotae