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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
BSC200P03LSGAUMA1
Infineon Technologies

BSC200P03LSGAUMA1

Wahanga Tapeke: 884

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.9A (Ta), 12.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 12.5A, 10V,

Momotae
BSS215PL6327HTSA1
Infineon Technologies

BSS215PL6327HTSA1

Wahanga Tapeke: 873

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 4.5V,

Momotae
BSS315PL6327HTSA1
Infineon Technologies

BSS315PL6327HTSA1

Wahanga Tapeke: 914

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 1.5A, 10V,

Momotae
BSO130N03MSGXUMA1
Infineon Technologies

BSO130N03MSGXUMA1

Wahanga Tapeke: 855

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V,

Momotae
BSS83PL6327HTSA1
Infineon Technologies

BSS83PL6327HTSA1

Wahanga Tapeke: 886

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 330mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V,

Momotae
BSS7728NL6327HTSA1
Infineon Technologies

BSS7728NL6327HTSA1

Wahanga Tapeke: 6115

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V,

Momotae
BSS84PL6433HTMA1
Infineon Technologies

BSS84PL6433HTMA1

Wahanga Tapeke: 768

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V,

Momotae
BSS670S2LL6327HTSA1
Infineon Technologies

BSS670S2LL6327HTSA1

Wahanga Tapeke: 5631

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 540mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 650 mOhm @ 270mA, 10V,

Momotae
BSS308PEL6327HTSA1
Infineon Technologies

BSS308PEL6327HTSA1

Wahanga Tapeke: 747

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 2A, 10V,

Momotae
BSS316NL6327HTSA1
Infineon Technologies

BSS316NL6327HTSA1

Wahanga Tapeke: 804

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 160 mOhm @ 1.4A, 10V,

Momotae
BSS214NW L6327
Infineon Technologies

BSS214NW L6327

Wahanga Tapeke: 6119

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V,

Momotae
BSS306NL6327HTSA1
Infineon Technologies

BSS306NL6327HTSA1

Wahanga Tapeke: 6076

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V,

Momotae
BSS214NL6327HTSA1
Infineon Technologies

BSS214NL6327HTSA1

Wahanga Tapeke: 803

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V,

Momotae
BSS209PW L6327
Infineon Technologies

BSS209PW L6327

Wahanga Tapeke: 817

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 580mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 580mA, 4.5V,

Momotae
BSS169L6327HTSA1
Infineon Technologies

BSS169L6327HTSA1

Wahanga Tapeke: 722

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae
BSS159NL6327HTSA1
Infineon Technologies

BSS159NL6327HTSA1

Wahanga Tapeke: 719

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V,

Momotae
BSS139L6327HTSA1
Infineon Technologies

BSS139L6327HTSA1

Wahanga Tapeke: 783

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

Momotae
BSS139L6906HTSA1
Infineon Technologies

BSS139L6906HTSA1

Wahanga Tapeke: 765

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V,

Momotae
BSS138W L6327
Infineon Technologies

BSS138W L6327

Wahanga Tapeke: 784

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Momotae
BSS138W L6433
Infineon Technologies

BSS138W L6433

Wahanga Tapeke: 726

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V,

Momotae
BSS127L6327HTSA1
Infineon Technologies

BSS127L6327HTSA1

Wahanga Tapeke: 810

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae
BSS138NL6433HTMA1
Infineon Technologies

BSS138NL6433HTMA1

Wahanga Tapeke: 726

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V,

Momotae
BSS126L6327HTSA1
Infineon Technologies

BSS126L6327HTSA1

Wahanga Tapeke: 754

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae
BSS126L6906HTSA1
Infineon Technologies

BSS126L6906HTSA1

Wahanga Tapeke: 769

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 0V, 10V, Rds Kei (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V,

Momotae
BSR92PL6327HTSA1
Infineon Technologies

BSR92PL6327HTSA1

Wahanga Tapeke: 734

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 140mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 11 Ohm @ 140mA, 10V,

Momotae
BSS119L6327HTSA1
Infineon Technologies

BSS119L6327HTSA1

Wahanga Tapeke: 792

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V,

Momotae
BSR316PL6327HTSA1
Infineon Technologies

BSR316PL6327HTSA1

Wahanga Tapeke: 775

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 360mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.8 Ohm @ 360mA, 10V,

Momotae
BSP322PL6327HTSA1
Infineon Technologies

BSP322PL6327HTSA1

Wahanga Tapeke: 811

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V,

Momotae
BSP321PL6327HTSA1
Infineon Technologies

BSP321PL6327HTSA1

Wahanga Tapeke: 714

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 980mA (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 980mA, 10V,

Momotae
BSF045N03MQ3 G
Infineon Technologies

BSF045N03MQ3 G

Wahanga Tapeke: 777

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Ta), 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V,

Momotae
BSC152N10NSFGATMA1
Infineon Technologies

BSC152N10NSFGATMA1

Wahanga Tapeke: 801

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.4A (Ta), 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 15.2 mOhm @ 25A, 10V,

Momotae
BSP89H6327XTSA1
Infineon Technologies

BSP89H6327XTSA1

Wahanga Tapeke: 183471

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V,

Momotae
BSP92PH6327XTSA1
Infineon Technologies

BSP92PH6327XTSA1

Wahanga Tapeke: 175847

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 260mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.8V, 10V, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V,

Momotae
BSP170PH6327XTSA1
Infineon Technologies

BSP170PH6327XTSA1

Wahanga Tapeke: 177989

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.9A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V,

Momotae
BSS225H6327FTSA1
Infineon Technologies

BSS225H6327FTSA1

Wahanga Tapeke: 122139

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V,

Momotae
BSS131L6327HTSA1
Infineon Technologies

BSS131L6327HTSA1

Wahanga Tapeke: 673

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 240V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V,

Momotae