Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 540mA, Rds Kei (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 650mA, Rds Kei (Max) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 280mA, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.03A, 700mA, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13.1A (Ta), 47.6A (Tc), Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 430mA, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 630mA, Rds Kei (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 294mA, Rds Kei (Max) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, 2.6A, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 6.3A, Rds Kei (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 2A, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.9A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.1A, 13.7A, Rds Kei (Max) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,
Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17A, 32A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1700V (1.7kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 325A (Tc), Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V, Vgs (th) (Max) @ Id: 2.3V @ 15mA (Typ),
Momo FET: 2 P-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.7V @ 100µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 15.2A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 800µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.2A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.6A, Rds Kei (Max) @ Id, Vgs: 73 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 25A, 15V, Vgs (th) (Max) @ Id: 5.5V @ 10mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, Rds Kei (Max) @ Id, Vgs: 350 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,
