Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A, Rds Kei (Max) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.7A, Rds Kei (Max) @ Id, Vgs: 144 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Rds Kei (Max) @ Id, Vgs: 26.4 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.8A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.6A, Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 430mA, Rds Kei (Max) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 700mA, Rds Kei (Max) @ Id, Vgs: 400 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 36.5 mOhm @ 2.5A, 4.5V,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 5.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.7A, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V, Vgs (th) (Max) @ Id: 4.9V @ 50µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Rds Kei (Max) @ Id, Vgs: 103 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 100µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180mA, 100mA, Rds Kei (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 350mA, Rds Kei (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 230mA, Rds Kei (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, 4.2A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A, Rds Kei (Max) @ Id, Vgs: 18.5 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 950mV @ 250µA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 220mA, Rds Kei (Max) @ Id, Vgs: 2.8 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.03A, 700mA, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, 2.5A, Rds Kei (Max) @ Id, Vgs: 55 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 3 N and 3 P-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A,
Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Momo FET: 2 P-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.1A (Ta), Rds Kei (Max) @ Id, Vgs: 9.8 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 860mA (Ta), Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 15V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.17A, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.9A (Ta), Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
