Transistors - FETs, MOSFETs - Huinga

NTMFD4C85NT1G

NTMFD4C85NT1G

Wahanga Tapeke: 29711

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15.4A, 29.7A, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia
NTMFD5C470NLT1G

NTMFD5C470NLT1G

Wahanga Tapeke: 6471

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A (Ta), 36A (Tc), Rds Kei (Max) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Ki te hiahia
FDMQ8203

FDMQ8203

Wahanga Tapeke: 55066

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, 2.6A, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
NVMFD5C650NLWFT1G

NVMFD5C650NLWFT1G

Wahanga Tapeke: 9967

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Ta), 111A (Tc), Rds Kei (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 98µA,

Ki te hiahia
NTGD3133PT1G

NTGD3133PT1G

Wahanga Tapeke: 3323

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.6A, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Ki te hiahia
FDS8958B_G

FDS8958B_G

Wahanga Tapeke: 2939

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.4A, 4.5A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
EFC8822R-TF

EFC8822R-TF

Wahanga Tapeke: 3006

Ki te hiahia
MCH6605-TL-EX

MCH6605-TL-EX

Wahanga Tapeke: 2947

Ki te hiahia
FDMS3620S

FDMS3620S

Wahanga Tapeke: 94876

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 17.5A, 38A, Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia
FDMS8095AC

FDMS8095AC

Wahanga Tapeke: 54792

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.2A, 1A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
NVMFD5C680NLWFT1G

NVMFD5C680NLWFT1G

Wahanga Tapeke: 6505

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.5A (Ta), 26A (Tc), Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

Ki te hiahia
EFC3C001NUZTCG

EFC3C001NUZTCG

Wahanga Tapeke: 153532

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Ki te hiahia
NTMFD4C86NT1G

NTMFD4C86NT1G

Wahanga Tapeke: 26834

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.3A, 18.1A, Rds Kei (Max) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
FDS8949-F085

FDS8949-F085

Wahanga Tapeke: 10816

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
FDG6304P

FDG6304P

Wahanga Tapeke: 174228

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 410mA, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
NDS8934

NDS8934

Wahanga Tapeke: 3124

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.8A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
FMP76-01T

FMP76-01T

Wahanga Tapeke: 227

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 54A (Tc), 62A (Tc), Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 38A, 10V, 11 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA,

Ki te hiahia
FMM50-025TF

FMM50-025TF

Wahanga Tapeke: 5089

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 4.5V @ 250µA,

Ki te hiahia
VMK90-02T2

VMK90-02T2

Wahanga Tapeke: 1263

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 83A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 3mA,

Ki te hiahia
SI1539DDL-T1-GE3

SI1539DDL-T1-GE3

Wahanga Tapeke: 3368

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 700mA (Tc), 460mA (Tc), Rds Kei (Max) @ Id, Vgs: 388 mOhm @ 600mA, 10V, 1.07 Ohm @ 400mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA,

Ki te hiahia
SI4565ADY-T1-GE3

SI4565ADY-T1-GE3

Wahanga Tapeke: 3004

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.6A, 5.6A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
SI3552DV-T1-E3

SI3552DV-T1-E3

Wahanga Tapeke: 116715

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
SQ3985EV-T1_GE3

SQ3985EV-T1_GE3

Wahanga Tapeke: 9989

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A (Tc), Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
RJM0603JSC-00#13

RJM0603JSC-00#13

Wahanga Tapeke: 3358

Momo FET: 3 N and 3 P-Channel (3-Phase Bridge), Āhuahira FET: Logic Level Gate, 4.5V Drive, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
DMNH6042SSDQ-13

DMNH6042SSDQ-13

Wahanga Tapeke: 171893

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.7A (Tc), Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
ZXMC3A17DN8TA

ZXMC3A17DN8TA

Wahanga Tapeke: 125228

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A, 3.4A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
DMC3028LSDXQ-13

DMC3028LSDXQ-13

Wahanga Tapeke: 198368

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 5.8A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMN2016LFG-7

DMN2016LFG-7

Wahanga Tapeke: 115776

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.2A, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia
DMG6898LSDQ-13

DMG6898LSDQ-13

Wahanga Tapeke: 192348

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
PMDPB95XNE2X

PMDPB95XNE2X

Wahanga Tapeke: 126919

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.7A (Ta), Rds Kei (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Ki te hiahia
PMGD290UCEAX

PMGD290UCEAX

Wahanga Tapeke: 122614

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 725mA, 500mA, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia
PHC21025,118

PHC21025,118

Wahanga Tapeke: 68440

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 1mA,

Ki te hiahia
IRF8910TRPBF

IRF8910TRPBF

Wahanga Tapeke: 184858

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

Ki te hiahia
KGF16N05D-400

KGF16N05D-400

Wahanga Tapeke: 3372

Momo FET: 2 N-Channel (Dual) Common Source, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 5.5V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16A (Ta), Rds Kei (Max) @ Id, Vgs: 0.95 mOhm @ 8A, 4.5V, Vgs (th) (Max) @ Id: 0.9V @ 250µA,

Ki te hiahia
TSM6502CR RLG

TSM6502CR RLG

Wahanga Tapeke: 10781

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), 18A (Tc), Rds Kei (Max) @ Id, Vgs: 34 mOhm @ 5.4A, 10V, 68 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
SSM6P41FE(TE85L,F)

SSM6P41FE(TE85L,F)

Wahanga Tapeke: 13283

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 720mA, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia