Transistors - FETs, MOSFETs - Huinga

AOP607

Wahanga Tapeke: 3275

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, Rds Kei (Max) @ Id, Vgs: 56 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOP609

Wahanga Tapeke: 2816

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOP605

Wahanga Tapeke: 2811

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4838

Wahanga Tapeke: 114715

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 9.6 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

AO4882

Wahanga Tapeke: 110285

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AO4852

Wahanga Tapeke: 115960

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

AO4886

Wahanga Tapeke: 2683

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

AON7611

Wahanga Tapeke: 168239

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 18.5A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4803A

Wahanga Tapeke: 134931

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4614B

Wahanga Tapeke: 146451

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4813

Wahanga Tapeke: 174721

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.1A, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

AO4800B

Wahanga Tapeke: 189998

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AO4805

Wahanga Tapeke: 180636

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

AO4630

Wahanga Tapeke: 137477

Momo FET: N and P-Channel Complementary, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, 7A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1.45V @ 250µA,

AO4612

Wahanga Tapeke: 189775

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, 3.2A, Rds Kei (Max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AO4840

Wahanga Tapeke: 161636

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AON6924

Wahanga Tapeke: 90862

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, 28A, Rds Kei (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

AOD609

Wahanga Tapeke: 192201

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AOC2804

Wahanga Tapeke: 105804

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Standard,

AON7804

Wahanga Tapeke: 120975

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

AAT7347IAS-T1

Wahanga Tapeke: 157898

AUIRFN8459TR

Wahanga Tapeke: 64112

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A, Rds Kei (Max) @ Id, Vgs: 5.9 mOhm @ 40A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 50µA,

AUIRFN8458TR

Wahanga Tapeke: 79588

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A (Tc), Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 25µA,

AUIRF7341QTR

Wahanga Tapeke: 89718

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A, Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7319QTR

Wahanga Tapeke: 89679

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A, 4.9A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7316QTR

Wahanga Tapeke: 89739

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7342QTR

Wahanga Tapeke: 91383

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7313QTR

Wahanga Tapeke: 94924

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7304QTR

Wahanga Tapeke: 101244

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

AUIRF7379QTR

Wahanga Tapeke: 101249

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.8A, 4.3A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF7103QTR

Wahanga Tapeke: 121994

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

AUIRF9952QTR

Wahanga Tapeke: 125213

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, 2.3A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

BSM180D12P3C007

Wahanga Tapeke: 168

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Max) @ Id: 5.6V @ 50mA,

BSM300D12P2E001

Wahanga Tapeke: 201

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Max) @ Id: 4V @ 68mA,

BSM080D12P2C008

Wahanga Tapeke: 263

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Max) @ Id: 4V @ 13.2mA,

BSS8402DWQ-7

Wahanga Tapeke: 194681

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 115mA, 130mA, Rds Kei (Max) @ Id, Vgs: 13.5 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,