Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 100

APTM10DUM05TG

Wahanga Tapeke: 2783

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 278A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V, Vgs (th) (Max) @ Id: 4V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM10DHM09TG

Wahanga Tapeke: 2789

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM10DDAM19T3G

Wahanga Tapeke: 2824

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM100TDU35PG

Wahanga Tapeke: 2796

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM10DDAM09T3G

Wahanga Tapeke: 2768

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 139A, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100DUM90G

Wahanga Tapeke: 2758

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 78A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM100H80FT1G

Wahanga Tapeke: 2809

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 960 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTM100DU18TG

Wahanga Tapeke: 2809

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43A, Rds Kei (Max) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM100DDA35T3G

Wahanga Tapeke: 2731

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A, Rds Kei (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100A46FT1G

Wahanga Tapeke: 2813

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A, Rds Kei (Max) @ Id, Vgs: 552 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100A40FT1G

Wahanga Tapeke: 2805

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A, Rds Kei (Max) @ Id, Vgs: 480 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Ki te hiahia

Microsemi Corporation

APTM100A12STG

Wahanga Tapeke: 2822

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 68A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 34A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Ki te hiahia

Microsemi Corporation

APTM100A23SCTG

Wahanga Tapeke: 2760

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1000V (1kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 36A, Rds Kei (Max) @ Id, Vgs: 270 mOhm @ 18A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Ki te hiahia

Microsemi Corporation

APTM08TDUM04PG

Wahanga Tapeke: 2746

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A, Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC80H29T1G

Wahanga Tapeke: 2742

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC80DSK29T3G

Wahanga Tapeke: 2793

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC80H29SCTG

Wahanga Tapeke: 1092

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC80DDA29T3G

Wahanga Tapeke: 2788

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 1mA,

Ki te hiahia

Microsemi Corporation

APTC80A15T1G

Wahanga Tapeke: 2799

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Ki te hiahia

Microsemi Corporation

APTC80AM75SCG

Wahanga Tapeke: 594

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 4mA,

Ki te hiahia

Microsemi Corporation

APTC80A10SCTG

Wahanga Tapeke: 863

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 21A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia

Microsemi Corporation

APTC60DSKM70T3G

Wahanga Tapeke: 2751

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTC60DSKM35T3G

Wahanga Tapeke: 2727

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 72A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Ki te hiahia

Microsemi Corporation

APTC60DDAM70T3G

Wahanga Tapeke: 2741

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Microsemi Corporation

APTC60AM70T1G

Wahanga Tapeke: 2769

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON5802A

Wahanga Tapeke: 2728

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.2A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 7.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON3810

Wahanga Tapeke: 2760

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AON3806

Wahanga Tapeke: 2744

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOD606

Wahanga Tapeke: 2755

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO8803

Wahanga Tapeke: 2798

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO7600

Wahanga Tapeke: 2769

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 900mA, 600mA, Rds Kei (Max) @ Id, Vgs: 300 mOhm @ 900mA, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO6804

Wahanga Tapeke: 2805

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 32 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4932

Wahanga Tapeke: 2765

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, 8A, Rds Kei (Max) @ Id, Vgs: 12.5 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4826

Wahanga Tapeke: 2775

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AOP610

Wahanga Tapeke: 2727

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Alpha & Omega Semiconductor Inc.

AO4619

Wahanga Tapeke: 3310

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,

Ki te hiahia