Transistors - FETs, MOSFETs - Huinga

AO4822L_101

AO4822L_101

Wahanga Tapeke: 2926

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4822AL

AO4822AL

Wahanga Tapeke: 2937

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4822AL_102

AO4822AL_102

Wahanga Tapeke: 2930

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4821L

AO4821L

Wahanga Tapeke: 2889

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 9A, 4.5V, Vgs (th) (Max) @ Id: 850mV @ 250µA,

Ki te hiahia
AO4822_101

AO4822_101

Wahanga Tapeke: 2919

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4818BL_101

AO4818BL_101

Wahanga Tapeke: 2886

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4818L

AO4818L

Wahanga Tapeke: 2884

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4812L_101

AO4812L_101

Wahanga Tapeke: 2974

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4812L

AO4812L

Wahanga Tapeke: 2904

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4812_101

AO4812_101

Wahanga Tapeke: 2947

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4807L

AO4807L

Wahanga Tapeke: 2938

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4806L

AO4806L

Wahanga Tapeke: 2910

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
AO4803L

AO4803L

Wahanga Tapeke: 2914

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4805L_101

AO4805L_101

Wahanga Tapeke: 2939

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Ki te hiahia
AO4803AL

AO4803AL

Wahanga Tapeke: 2963

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
AO4801L

AO4801L

Wahanga Tapeke: 2906

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia
AO4801AS
Ki te hiahia
AO4801AL

AO4801AL

Wahanga Tapeke: 2897

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia
AO4801AL_001

AO4801AL_001

Wahanga Tapeke: 2928

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

Ki te hiahia
AO4800L

AO4800L

Wahanga Tapeke: 2903

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia
AO4616L_102

AO4616L_102

Wahanga Tapeke: 3349

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, 7A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
AO4614B_101

AO4614B_101

Wahanga Tapeke: 2973

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
AO4614BL_103

AO4614BL_103

Wahanga Tapeke: 2888

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
AO4613_001

AO4613_001

Wahanga Tapeke: 2944

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
AON6971

AON6971

Wahanga Tapeke: 2884

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A, 40A, Rds Kei (Max) @ Id, Vgs: 5.7 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia
AO4952

AO4952

Wahanga Tapeke: 190149

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia
APTMC60TLM55CT3AG

APTMC60TLM55CT3AG

Wahanga Tapeke: 222

Momo FET: 4 N-Channel (Three Level Inverter), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Rds Kei (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),

Ki te hiahia
APTMC120AM16CD3AG

APTMC120AM16CD3AG

Wahanga Tapeke: 166

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 131A (Tc), Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 5mA (Typ),

Ki te hiahia
APTMC60TL11CT3AG

APTMC60TL11CT3AG

Wahanga Tapeke: 420

Momo FET: 4 N-Channel (Three Level Inverter), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

Ki te hiahia
APTC90AM60SCTG

APTC90AM60SCTG

Wahanga Tapeke: 647

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 59A, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

Ki te hiahia
APTC90H12SCTG

APTC90H12SCTG

Wahanga Tapeke: 686

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

Ki te hiahia
APTC60DSKM70CT1G

APTC60DSKM70CT1G

Wahanga Tapeke: 2914

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia
APTC60DDAM70CT1G

APTC60DDAM70CT1G

Wahanga Tapeke: 3376

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Super Junction, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 39A, Rds Kei (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Ki te hiahia
APTML502UM90R020T3AG

APTML502UM90R020T3AG

Wahanga Tapeke: 2888

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 52A, Rds Kei (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia
APTC60DDAM45CT1G

APTC60DDAM45CT1G

Wahanga Tapeke: 2940

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 49A, Rds Kei (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

Ki te hiahia
APTML102UM09R004T3AG

APTML102UM09R004T3AG

Wahanga Tapeke: 2898

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 154A (Tc), Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

Ki te hiahia