Transistors - FETs, MOSFETs - Kotahi | Nga Hua Semiconductor Motuhake | 100

SIA441DJ-T1-GE3

Wahanga Tapeke: 111388

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 4.4A, 10V,

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Vishay Siliconix

SQM40N15-38_GE3

Wahanga Tapeke: 50212

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 15A, 10V,

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Vishay Siliconix

SIHP18N60E-GE3

Wahanga Tapeke: 8094

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 18A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 202 mOhm @ 9A, 10V,

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Vishay Siliconix

SQJQ410EL-T1_GE3

Wahanga Tapeke: 54803

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V,

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Vishay Siliconix

SIR870ADP-T1-RE3

Wahanga Tapeke: 7921

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V,

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Vishay Siliconix

SQM50P08-25L_GE3

Wahanga Tapeke: 8060

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 12.5A, 10V,

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Vishay Siliconix

SI7898DP-T1-E3

Wahanga Tapeke: 89672

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V,

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Vishay Siliconix

SQM100N04-2M7_GE3

Wahanga Tapeke: 54046

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.7 mOhm @ 30A, 10V,

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Vishay Siliconix

SI7625DN-T1-GE3

Wahanga Tapeke: 146833

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 15A, 10V,

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Vishay Siliconix

SIHP7N60E-E3

Wahanga Tapeke: 68110

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

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Vishay Siliconix

SI2307CDS-T1-GE3

Wahanga Tapeke: 169805

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 88 mOhm @ 3.5A, 10V,

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Vishay Siliconix

SI4840BDY-T1-E3

Wahanga Tapeke: 113559

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 12.4A, 10V,

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Vishay Siliconix

SQM40061EL_GE3

Wahanga Tapeke: 5795

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V,

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Vishay Siliconix

SI9435BDY-T1-E3

Wahanga Tapeke: 156461

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.1A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V,

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Vishay Siliconix

SIR871DP-T1-GE3

Wahanga Tapeke: 7949

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 20A, 10V,

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Vishay Siliconix

SUM60030E-GE3

Wahanga Tapeke: 40410

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V,

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Vishay Siliconix

SIE882DF-T1-GE3

Wahanga Tapeke: 60960

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.4 mOhm @ 20A, 10V,

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Vishay Siliconix

SUD19N20-90-E3

Wahanga Tapeke: 55792

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 5A, 10V,

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Vishay Siliconix

SQP50P03-07_GE3

Wahanga Tapeke: 5858

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V,

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Vishay Siliconix

SI1050X-T1-GE3

Wahanga Tapeke: 176985

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 8V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.34A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V,

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Vishay Siliconix

SIR872DP-T1-GE3

Wahanga Tapeke: 53485

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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Vishay Siliconix

SIR440DP-T1-GE3

Wahanga Tapeke: 75878

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.55 mOhm @ 20A, 10V,

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Vishay Siliconix

SI7788DP-T1-GE3

Wahanga Tapeke: 53122

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V,

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Vishay Siliconix

SI7464DP-T1-E3

Wahanga Tapeke: 80879

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V,

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Vishay Siliconix

SI4626ADY-T1-E3

Wahanga Tapeke: 70488

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.3 mOhm @ 15A, 10V,

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Vishay Siliconix

SQM200N04-1M8_GE3

Wahanga Tapeke: 5861

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 30A, 10V,

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Vishay Siliconix

SIHF7N60E-GE3

Wahanga Tapeke: 7919

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

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Vishay Siliconix

SI2325DS-T1-E3

Wahanga Tapeke: 163982

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 530mA (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V,

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Vishay Siliconix

SIR688DP-T1-GE3

Wahanga Tapeke: 76252

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V,

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Vishay Siliconix

SIHA12N50E-E3

Wahanga Tapeke: 35246

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V,

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Vishay Siliconix

SI4434ADY-T1-GE3

Wahanga Tapeke: 7910

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.8A (Ta), 4.1A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 150 mOhm @ 2.8A, 10V,

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Vishay Siliconix

SIHJ6N65E-T1-GE3

Wahanga Tapeke: 71835

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 868 mOhm @ 3A, 10V,

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Vishay Siliconix

SQM50P06-15L_GE3

Wahanga Tapeke: 8070

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V,

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Vishay Siliconix

SQM25N15-52_GE3

Wahanga Tapeke: 8048

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 52 mOhm @ 15A, 10V,

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Vishay Siliconix

SIHP6N65E-GE3

Wahanga Tapeke: 5867

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V,

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Vishay Siliconix

SIR872ADP-T1-RE3

Wahanga Tapeke: 7954

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53.7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V,

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