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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
SQM120N10-3M8_GE3
Vishay Siliconix

SQM120N10-3M8_GE3

Wahanga Tapeke: 38953

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V,

Momotae
SI7414DN-T1-GE3
Vishay Siliconix

SI7414DN-T1-GE3

Wahanga Tapeke: 128182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.6A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 8.7A, 10V,

Momotae
SQ3456BEV-T1_GE3
Vishay Siliconix

SQ3456BEV-T1_GE3

Wahanga Tapeke: 180919

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V,

Momotae
SQM40014EM_GE3
Vishay Siliconix

SQM40014EM_GE3

Wahanga Tapeke: 8185

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1 mOhm @ 35A, 10V,

Momotae
SI4463BDY-T1-E3
Vishay Siliconix

SI4463BDY-T1-E3

Wahanga Tapeke: 124207

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.8A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V,

Momotae
SIHP23N60E-GE3
Vishay Siliconix

SIHP23N60E-GE3

Wahanga Tapeke: 40977

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 23A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 158 mOhm @ 12A, 10V,

Momotae
SQJ488EP-T1_GE3
Vishay Siliconix

SQJ488EP-T1_GE3

Wahanga Tapeke: 102542

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 42A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 7.4A, 10V,

Momotae
SI7478DP-T1-GE3
Vishay Siliconix

SI7478DP-T1-GE3

Wahanga Tapeke: 72362

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V,

Momotae
SQP120N10-3M8_GE3
Vishay Siliconix

SQP120N10-3M8_GE3

Wahanga Tapeke: 8429

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V,

Momotae
SIE812DF-T1-GE3
Vishay Siliconix

SIE812DF-T1-GE3

Wahanga Tapeke: 40462

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.6 mOhm @ 25A, 10V,

Momotae
SUM110P06-07L-E3
Vishay Siliconix

SUM110P06-07L-E3

Wahanga Tapeke: 43657

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.9 mOhm @ 30A, 10V,

Momotae
SUM110P08-11L-E3
Vishay Siliconix

SUM110P08-11L-E3

Wahanga Tapeke: 26593

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V,

Momotae
SQM85N15-19_GE3
Vishay Siliconix

SQM85N15-19_GE3

Wahanga Tapeke: 41153

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 85A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 30A, 10V,

Momotae
SUM70101EL-GE3
Vishay Siliconix

SUM70101EL-GE3

Wahanga Tapeke: 5857

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.1 mOhm @ 30A, 10V,

Momotae
SIHH11N65E-T1-GE3
Vishay Siliconix

SIHH11N65E-T1-GE3

Wahanga Tapeke: 31998

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 363 mOhm @ 6A, 10V,

Momotae
SIHP7N60E-GE3
Vishay Siliconix

SIHP7N60E-GE3

Wahanga Tapeke: 31909

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V,

Momotae
SIHA21N65EF-E3
Vishay Siliconix

SIHA21N65EF-E3

Wahanga Tapeke: 14182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V,

Momotae
IRLL110TRPBF
Vishay Siliconix

IRLL110TRPBF

Wahanga Tapeke: 177510

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4V, 5V, Rds Kei (Max) @ Id, Vgs: 540 mOhm @ 900mA, 5V,

Momotae
SIHH21N60EF-T1-GE3
Vishay Siliconix

SIHH21N60EF-T1-GE3

Wahanga Tapeke: 24041

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 185 mOhm @ 11A, 10V,

Momotae
SIHB24N65ET1-GE3
Vishay Siliconix

SIHB24N65ET1-GE3

Wahanga Tapeke: 8432

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V,

Momotae
SQM100N10-10_GE3
Vishay Siliconix

SQM100N10-10_GE3

Wahanga Tapeke: 43589

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 30A, 10V,

Momotae
SIE808DF-T1-E3
Vishay Siliconix

SIE808DF-T1-E3

Wahanga Tapeke: 35075

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 60A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V,

Momotae
SI7439DP-T1-GE3
Vishay Siliconix

SI7439DP-T1-GE3

Wahanga Tapeke: 35018

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 5.2A, 10V,

Momotae
SUM70040M-GE3
Vishay Siliconix

SUM70040M-GE3

Wahanga Tapeke: 40354

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V,

Momotae
SIHB20N50E-GE3
Vishay Siliconix

SIHB20N50E-GE3

Wahanga Tapeke: 20238

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 184 mOhm @ 10A, 10V,

Momotae
SUM50020EL-GE3
Vishay Siliconix

SUM50020EL-GE3

Wahanga Tapeke: 40423

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V,

Momotae
SIHP15N60E-E3
Vishay Siliconix

SIHP15N60E-E3

Wahanga Tapeke: 22504

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 280 mOhm @ 8A, 10V,

Momotae
SQM120N06-06_GE3
Vishay Siliconix

SQM120N06-06_GE3

Wahanga Tapeke: 5875

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V,

Momotae
SUM40010EL-GE3
Vishay Siliconix

SUM40010EL-GE3

Wahanga Tapeke: 42698

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 30A, 10V,

Momotae
SI7336ADP-T1-E3
Vishay Siliconix

SI7336ADP-T1-E3

Wahanga Tapeke: 110356

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V,

Momotae
SQP90P06-07L_GE3
Vishay Siliconix

SQP90P06-07L_GE3

Wahanga Tapeke: 8376

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 6.7 mOhm @ 30A, 10V,

Momotae
SQM120N03-1M5L_GE3
Vishay Siliconix

SQM120N03-1M5L_GE3

Wahanga Tapeke: 39214

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 30A, 10V,

Momotae
SIDR610DP-T1-GE3
Vishay Siliconix

SIDR610DP-T1-GE3

Wahanga Tapeke: 8141

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.9A (Ta), 39.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 31.9 mOhm @ 10A, 10V,

Momotae
SIA459EDJ-T1-GE3
Vishay Siliconix

SIA459EDJ-T1-GE3

Wahanga Tapeke: 190565

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 2.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 35 mOhm @ 5A, 4.5V,

Momotae
SQP10250E_GE3
Vishay Siliconix

SQP10250E_GE3

Wahanga Tapeke: 8326

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 7.5V, 10V, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 15A, 10V,

Momotae
SIB441EDK-T1-GE3
Vishay Siliconix

SIB441EDK-T1-GE3

Wahanga Tapeke: 166611

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 1.5V, 4.5V, Rds Kei (Max) @ Id, Vgs: 25.5 mOhm @ 4A, 4.5V,

Momotae