Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 290 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 7A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, 4.5A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, 2.5A, Rds Kei (Max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,
Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, 5.5A, Rds Kei (Max) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 0.9V Drive, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, 3.5A, Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, Rds Kei (Max) @ Id, Vgs: 22 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 2.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 215 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, Rds Kei (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A,
Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 73 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 42 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A, 7A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,
