Transistors - FETs, MOSFETs - Huinga | Nga Hua Semiconductor Motuhake | 5

BSM180D12P3C007

Wahanga Tapeke: 168

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 180A (Tc), Vgs (th) (Max) @ Id: 5.6V @ 50mA,

Momotae

Rohm Semiconductor

BSM300D12P2E001

Wahanga Tapeke: 201

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 300A (Tc), Vgs (th) (Max) @ Id: 4V @ 68mA,

Momotae

Rohm Semiconductor

BSM080D12P2C008

Wahanga Tapeke: 263

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Vgs (th) (Max) @ Id: 4V @ 13.2mA,

Momotae

Rohm Semiconductor

BSM120D12P2C005

Wahanga Tapeke: 258

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Vgs (th) (Max) @ Id: 2.7V @ 22mA,

Momotae

Rohm Semiconductor

BSM180D12P2C101

Wahanga Tapeke: 243

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Silicon Carbide (SiC), Tohaina ki te Hiko Puna (Vdss): 1200V (1.2kV), I Nei - Te Tuku Tonu (Id) @ 25 ° C: 204A (Tc), Vgs (th) (Max) @ Id: 4V @ 35.2mA,

Momotae

Rohm Semiconductor

VT6J1T2CR

Wahanga Tapeke: 168368

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae

Rohm Semiconductor

EM6K31T2R

Wahanga Tapeke: 181152

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, Rds Kei (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Momotae

Rohm Semiconductor

EM6K31GT2R

Wahanga Tapeke: 153168

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 250mA, Rds Kei (Max) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Momotae

Rohm Semiconductor

VT6M1T2CR

Wahanga Tapeke: 125142

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 100mA, Rds Kei (Max) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae

Rohm Semiconductor

EM6J1T2R

Wahanga Tapeke: 109230

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Momotae

Rohm Semiconductor

TT8J13TCR

Wahanga Tapeke: 181566

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae

Rohm Semiconductor

US6J11TR

Wahanga Tapeke: 145887

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.3A, Rds Kei (Max) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae

Rohm Semiconductor

TT8J11TCR

Wahanga Tapeke: 175857

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 12V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A, Rds Kei (Max) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae

Rohm Semiconductor

SP8M24FRATB

Wahanga Tapeke: 109

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), 3.5A (Ta), Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8M51FRATB

Wahanga Tapeke: 152

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), 2.5A (Ta), Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8M3TR

Wahanga Tapeke: 154779

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, 2.4A, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae

Rohm Semiconductor

HP8KA1TB

Wahanga Tapeke: 113065

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 14A, Rds Kei (Max) @ Id, Vgs: 5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 10mA,

Momotae

Rohm Semiconductor

SP8K22FRATB

Wahanga Tapeke: 87

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Rds Kei (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8K33FRATB

Wahanga Tapeke: 149

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), Rds Kei (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8K1TR

Wahanga Tapeke: 171251

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.5V Drive, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Momotae

Rohm Semiconductor

TT8K11TCR

Wahanga Tapeke: 195555

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A, Rds Kei (Max) @ Id, Vgs: 71 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1A,

Momotae

Rohm Semiconductor

SP8K52FRATB

Wahanga Tapeke: 115

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3A (Ta), Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8J3TR

Wahanga Tapeke: 193760

Momo FET: 2 P-Channel (Dual), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8K32FRATB

Wahanga Tapeke: 80

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

HP8S36TB

Wahanga Tapeke: 130641

Momo FET: 2 N-Channel (Half Bridge), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A, 80A, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

US6K1TR

Wahanga Tapeke: 126806

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Momotae

Rohm Semiconductor

US6M2GTR

Wahanga Tapeke: 127

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, 1A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA,

Momotae

Rohm Semiconductor

HS8K11TB

Wahanga Tapeke: 188805

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, 11A, Rds Kei (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8K2TR

Wahanga Tapeke: 164928

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8M2TR

Wahanga Tapeke: 126279

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8M5FRATB

Wahanga Tapeke: 154

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), 7A (Ta), Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8M6FRATB

Wahanga Tapeke: 153

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), 3.5A (Ta), Rds Kei (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V, 90 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8M21FRATB

Wahanga Tapeke: 70

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), 4A (Ta), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

SP8K24FRATB

Wahanga Tapeke: 123

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 45V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Ta), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

TT8J2TR

Wahanga Tapeke: 170382

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae

Rohm Semiconductor

US6K2TR

Wahanga Tapeke: 124293

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Momotae