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Optoisolators - Transistor, Putanga Whakaahua

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  • Optoisolators - Transistor, Putanga Whakaahua
FOD050L
ON Semiconductor

FOD050L

Wahanga Tapeke: 90440

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 15% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 1µs, 1µs (Max),

Momotae
H11A617AW
ON Semiconductor

H11A617AW

Wahanga Tapeke: 5812

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 80% @ 10mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
MOC8103W
ON Semiconductor

MOC8103W

Wahanga Tapeke: 5785

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 108% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 173% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
TIL117FVM
ON Semiconductor

TIL117FVM

Wahanga Tapeke: 5931

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA, Whakakā / Weto Weto (Patohia): 10µs, 10µs (Max), Whakatika / Wa Hinga (Momo): 2µs, 2µs,

Momotae
SL5504300W
ON Semiconductor

SL5504300W

Wahanga Tapeke: 5838

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 10mA, Whakakā / Weto Weto (Patohia): 50µs, 150µs (Max),

Momotae
FOD617DW
ON Semiconductor

FOD617DW

Wahanga Tapeke: 5812

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
HMHA2801BR1V
ON Semiconductor

HMHA2801BR1V

Wahanga Tapeke: 5775

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 130% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 260% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
SL5504300
ON Semiconductor

SL5504300

Wahanga Tapeke: 5789

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 10mA, Whakakā / Weto Weto (Patohia): 50µs, 150µs (Max),

Momotae
H11A617DS
ON Semiconductor

H11A617DS

Wahanga Tapeke: 5749

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
MOC119W
ON Semiconductor

MOC119W

Wahanga Tapeke: 5892

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 300% @ 10mA, Whakakā / Weto Weto (Patohia): 3.5µs, 95µs,

Momotae
HMA2701BR1V
ON Semiconductor

HMA2701BR1V

Wahanga Tapeke: 5721

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 80% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 160% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
HMA121ER1
ON Semiconductor

HMA121ER1

Wahanga Tapeke: 5902

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 150% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
MOCD217R1M
ON Semiconductor

MOCD217R1M

Wahanga Tapeke: 5865

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
FOD070LR1
ON Semiconductor

FOD070LR1

Wahanga Tapeke: 5910

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 400% @ 500µA, Te Whakatauranga Whakawhiti Onaianei (Max): 7000% @ 500µA, Whakakā / Weto Weto (Patohia): 3µs, 50µs,

Momotae
HCPL4502SV
ON Semiconductor

HCPL4502SV

Wahanga Tapeke: 5913

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 19% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 450ns, 300ns,

Momotae
HCPL0452
ON Semiconductor

HCPL0452

Wahanga Tapeke: 5816

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 19% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 450ns, 300ns,

Momotae
MOC8105W
ON Semiconductor

MOC8105W

Wahanga Tapeke: 5989

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 65% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 133% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
HCPL2530SV
ON Semiconductor

HCPL2530SV

Wahanga Tapeke: 5907

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 7% @ 16mA, Te Whakatauranga Whakawhiti Onaianei (Max): 50% @ 16mA, Whakakā / Weto Weto (Patohia): 450ns, 500ns,

Momotae
H11A5FVM
ON Semiconductor

H11A5FVM

Wahanga Tapeke: 5932

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 30% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae
H11AA814A300
ON Semiconductor

H11AA814A300

Wahanga Tapeke: 5936

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 1mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
MOC8103SD
ON Semiconductor

MOC8103SD

Wahanga Tapeke: 5821

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 108% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 173% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
MOC8113W
ON Semiconductor

MOC8113W

Wahanga Tapeke: 5854

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Whakakā / Weto Weto (Patohia): 4.2µs, 23µs, Whakatika / Wa Hinga (Momo): 3µs, 14µs,

Momotae
CNY17F23SD
ON Semiconductor

CNY17F23SD

Wahanga Tapeke: 5886

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 63% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 125% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
HMA121EV
ON Semiconductor

HMA121EV

Wahanga Tapeke: 5821

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 150% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
FOD817300W
ON Semiconductor

FOD817300W

Wahanga Tapeke: 188129

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
H11A617DSD
ON Semiconductor

H11A617DSD

Wahanga Tapeke: 5924

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
FOD617D
ON Semiconductor

FOD617D

Wahanga Tapeke: 5937

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
H11B1S
ON Semiconductor

H11B1S

Wahanga Tapeke: 5785

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 1mA, Whakakā / Weto Weto (Patohia): 25µs, 18µs,

Momotae
HMHAA280R3V
ON Semiconductor

HMHAA280R3V

Wahanga Tapeke: 5894

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
H11B3SD
ON Semiconductor

H11B3SD

Wahanga Tapeke: 5895

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Whakakā / Weto Weto (Patohia): 25µs, 18µs,

Momotae
H11B2300
ON Semiconductor

H11B2300

Wahanga Tapeke: 5789

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 1mA, Whakakā / Weto Weto (Patohia): 25µs, 18µs,

Momotae
CNY171
ON Semiconductor

CNY171

Wahanga Tapeke: 5896

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 80% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
HMA2701BR4V
ON Semiconductor

HMA2701BR4V

Wahanga Tapeke: 5737

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 80% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 160% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
MOC205VM
ON Semiconductor

MOC205VM

Wahanga Tapeke: 5885

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 80% @ 10mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
CNX38U300
ON Semiconductor

CNX38U300

Wahanga Tapeke: 2647

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 70% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 210% @ 10mA, Whakakā / Weto Weto (Patohia): 20µs, 20µs,

Momotae
H11A4TM
ON Semiconductor

H11A4TM

Wahanga Tapeke: 5908

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 10% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae