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Optoisolators - Transistor, Putanga Whakaahua

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  • Optoisolators - Transistor, Putanga Whakaahua
H11B815300W
ON Semiconductor

H11B815300W

Wahanga Tapeke: 5924

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 600% @ 1mA, Te Whakatauranga Whakawhiti Onaianei (Max): 7500% @ 1mA, Whakatika / Wa Hinga (Momo): 300µs, 250µs (Max),

Momotae
MOC217M_F132
ON Semiconductor

MOC217M_F132

Wahanga Tapeke: 5955

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
H11A2SM
ON Semiconductor

H11A2SM

Wahanga Tapeke: 5969

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae
H11B1300W
ON Semiconductor

H11B1300W

Wahanga Tapeke: 5887

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 500% @ 1mA, Whakakā / Weto Weto (Patohia): 25µs, 18µs,

Momotae
CNW84
ON Semiconductor

CNW84

Wahanga Tapeke: 5896

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5900Vrms, Ratio Whakawhiti Onaianei (Min): 0.63% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 3.20% @ 10mA,

Momotae
SL5501S
ON Semiconductor

SL5501S

Wahanga Tapeke: 5954

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 25% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 400% @ 10mA, Whakakā / Weto Weto (Patohia): 20µs, 50µs (Max),

Momotae
FODM2701B
ON Semiconductor

FODM2701B

Wahanga Tapeke: 5858

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
MOC8111S
ON Semiconductor

MOC8111S

Wahanga Tapeke: 5972

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 3µs, 18µs, Whakatika / Wa Hinga (Momo): 2µs, 11µs,

Momotae
FODM121CR1
ON Semiconductor

FODM121CR1

Wahanga Tapeke: 2606

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
HMA121C
ON Semiconductor

HMA121C

Wahanga Tapeke: 5961

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
CNW11AV2300
ON Semiconductor

CNW11AV2300

Wahanga Tapeke: 2639

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 4000Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 10mA,

Momotae
CNY17F2300W
ON Semiconductor

CNY17F2300W

Wahanga Tapeke: 5881

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 63% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 125% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
FODM2701R2V
ON Semiconductor

FODM2701R2V

Wahanga Tapeke: 5907

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
H11A817BS
ON Semiconductor

H11A817BS

Wahanga Tapeke: 5737

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 130% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 260% @ 5mA, Whakatika / Wa Hinga (Momo): 2.4µs, 2.4µs,

Momotae
H11AA13S
ON Semiconductor

H11AA13S

Wahanga Tapeke: 5862

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA,

Momotae
CNY173S
ON Semiconductor

CNY173S

Wahanga Tapeke: 5802

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 200% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
CNY17F4300W
ON Semiconductor

CNY17F4300W

Wahanga Tapeke: 5863

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
CNY17F2SD
ON Semiconductor

CNY17F2SD

Wahanga Tapeke: 4292

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 63% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 125% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 1µs, 2µs,

Momotae
H11AG33S
ON Semiconductor

H11AG33S

Wahanga Tapeke: 5946

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 1mA, Whakakā / Weto Weto (Patohia): 5µs, 5µs,

Momotae
CNW82
ON Semiconductor

CNW82

Wahanga Tapeke: 5786

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5900Vrms, Ratio Whakawhiti Onaianei (Min): 0.4% @ 10mA,

Momotae
FODM2701AR2
ON Semiconductor

FODM2701AR2

Wahanga Tapeke: 5746

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 300% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
HCPL2730V
ON Semiconductor

HCPL2730V

Wahanga Tapeke: 5928

Tuhinga o mua: 2, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 300% @ 1.6mA, Whakakā / Weto Weto (Patohia): 300ns, 5µs,

Momotae
H11A4FVM
ON Semiconductor

H11A4FVM

Wahanga Tapeke: 5905

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 7500Vpk, Ratio Whakawhiti Onaianei (Min): 10% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae
H11B23S
ON Semiconductor

H11B23S

Wahanga Tapeke: 5841

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 200% @ 1mA, Whakakā / Weto Weto (Patohia): 25µs, 18µs,

Momotae
FOD617DS
ON Semiconductor

FOD617DS

Wahanga Tapeke: 5789

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
H11A2300W
ON Semiconductor

H11A2300W

Wahanga Tapeke: 5849

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 2µs,

Momotae
CNX38USD
ON Semiconductor

CNX38USD

Wahanga Tapeke: 5873

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 70% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 210% @ 10mA, Whakakā / Weto Weto (Patohia): 20µs, 20µs,

Momotae
FOD817DW
ON Semiconductor

FOD817DW

Wahanga Tapeke: 5773

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5000Vrms, Ratio Whakawhiti Onaianei (Min): 300% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 4µs, 3µs,

Momotae
H11G13S
ON Semiconductor

H11G13S

Wahanga Tapeke: 5875

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 5300Vrms, Ratio Whakawhiti Onaianei (Min): 1000% @ 10mA, Whakakā / Weto Weto (Patohia): 5µs, 100µs,

Momotae
CNY174SM
ON Semiconductor

CNY174SM

Wahanga Tapeke: 110969

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 4170Vrms, Ratio Whakawhiti Onaianei (Min): 160% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 320% @ 10mA, Whakakā / Weto Weto (Patohia): 2µs, 3µs, Whakatika / Wa Hinga (Momo): 4µs, 3.5µs (Max),

Momotae
MOC215M
ON Semiconductor

MOC215M

Wahanga Tapeke: 5941

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 20% @ 1mA, Whakakā / Weto Weto (Patohia): 4µs, 4µs, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
FODM121DR1V
ON Semiconductor

FODM121DR1V

Wahanga Tapeke: 5820

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
HMA121BR4V
ON Semiconductor

HMA121BR4V

Wahanga Tapeke: 5870

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 150% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
HMHA281R3V
ON Semiconductor

HMHA281R3V

Wahanga Tapeke: 5965

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 3750Vrms, Ratio Whakawhiti Onaianei (Min): 50% @ 5mA, Te Whakatauranga Whakawhiti Onaianei (Max): 600% @ 5mA, Whakatika / Wa Hinga (Momo): 3µs, 3µs,

Momotae
MOC217VM
ON Semiconductor

MOC217VM

Wahanga Tapeke: 5986

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 100% @ 1mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae
MOC208R2VM
ON Semiconductor

MOC208R2VM

Wahanga Tapeke: 5748

Tuhinga o mua: 1, Ngaohiko - Motuhotu: 2500Vrms, Ratio Whakawhiti Onaianei (Min): 40% @ 10mA, Te Whakatauranga Whakawhiti Onaianei (Max): 125% @ 10mA, Whakakā / Weto Weto (Patohia): 7.5µs, 5.7µs, Whakatika / Wa Hinga (Momo): 3.2µs, 4.7µs,

Momotae