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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
FCH041N60E
ON Semiconductor

FCH041N60E

Wahanga Tapeke: 5830

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 77A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 39A, 10V,

Momotae
FQP6N40CF
ON Semiconductor

FQP6N40CF

Wahanga Tapeke: 42360

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 400V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V,

Momotae
FDB8444
ON Semiconductor

FDB8444

Wahanga Tapeke: 73361

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 70A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.5 mOhm @ 70A, 10V,

Momotae
HUF75542P3
ON Semiconductor

HUF75542P3

Wahanga Tapeke: 23366

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V,

Momotae
NVB5404NT4G
ON Semiconductor

NVB5404NT4G

Wahanga Tapeke: 47506

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Ta), Rds Kei (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V,

Momotae
FCH041N60F
ON Semiconductor

FCH041N60F

Wahanga Tapeke: 7301

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V,

Momotae
FQPF5N50CYDTU
ON Semiconductor

FQPF5N50CYDTU

Wahanga Tapeke: 47888

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V,

Momotae
FQP9N30
ON Semiconductor

FQP9N30

Wahanga Tapeke: 51666

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V,

Momotae
HUF75639S3
ON Semiconductor

HUF75639S3

Wahanga Tapeke: 54528

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V,

Momotae
WPH4003-1E
ON Semiconductor

WPH4003-1E

Wahanga Tapeke: 12250

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 1700V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10.5 Ohm @ 1.5A, 10V,

Momotae
FDP2710-F085
ON Semiconductor

FDP2710-F085

Wahanga Tapeke: 4329

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 50A, 10V,

Momotae
FDB2532-F085
ON Semiconductor

FDB2532-F085

Wahanga Tapeke: 4262

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 79A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 33A, 10V,

Momotae
FQP12P20
ON Semiconductor

FQP12P20

Wahanga Tapeke: 39385

Momo FET: P-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 470 mOhm @ 5.75A, 10V,

Momotae
FQPF5N60C
ON Semiconductor

FQPF5N60C

Wahanga Tapeke: 65973

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.5 Ohm @ 2.25A, 10V,

Momotae
FDP3651U
ON Semiconductor

FDP3651U

Wahanga Tapeke: 23051

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 80A, 10V,

Momotae
FCA36N60NF
ON Semiconductor

FCA36N60NF

Wahanga Tapeke: 6046

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 34.9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 95 mOhm @ 18A, 10V,

Momotae
FQA90N08
ON Semiconductor

FQA90N08

Wahanga Tapeke: 18361

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 90A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 45A, 10V,

Momotae
FQB9N50CTM
ON Semiconductor

FQB9N50CTM

Wahanga Tapeke: 83086

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V,

Momotae
FCA35N60
ON Semiconductor

FCA35N60

Wahanga Tapeke: 10941

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 35A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V,

Momotae
HUFA75645S3S
ON Semiconductor

HUFA75645S3S

Wahanga Tapeke: 25731

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 75A, 10V,

Momotae
NTHL082N65S3F
ON Semiconductor

NTHL082N65S3F

Wahanga Tapeke: 2216

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 40A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 82 mOhm @ 20A, 10V,

Momotae
FDP33N25
ON Semiconductor

FDP33N25

Wahanga Tapeke: 37182

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 33A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V,

Momotae
FCH041N60F-F085
ON Semiconductor

FCH041N60F-F085

Wahanga Tapeke: 2859

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 76A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 41 mOhm @ 38A, 10V,

Momotae
FCP067N65S3
ON Semiconductor

FCP067N65S3

Wahanga Tapeke: 19794

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 44A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 67 mOhm @ 22A, 10V,

Momotae
FDPF33N25TRDTU
ON Semiconductor

FDPF33N25TRDTU

Wahanga Tapeke: 87253

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V,

Momotae
FCH47N60F-F085
ON Semiconductor

FCH47N60F-F085

Wahanga Tapeke: 2894

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 47A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 75 mOhm @ 47A, 10V,

Momotae
FQA44N30
ON Semiconductor

FQA44N30

Wahanga Tapeke: 10244

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 69 mOhm @ 21.75A, 10V,

Momotae
FCP11N60N
ON Semiconductor

FCP11N60N

Wahanga Tapeke: 49440

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V,

Momotae
FCPF11N60NT
ON Semiconductor

FCPF11N60NT

Wahanga Tapeke: 17440

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10.8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V,

Momotae
FQA6N90C-F109
ON Semiconductor

FQA6N90C-F109

Wahanga Tapeke: 2429

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 Ohm @ 3A, 10V,

Momotae
FDA38N30
ON Semiconductor

FDA38N30

Wahanga Tapeke: 22090

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 300V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 38A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 85 mOhm @ 19A, 10V,

Momotae
FQP4N90C
ON Semiconductor

FQP4N90C

Wahanga Tapeke: 69095

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 4.2 Ohm @ 2A, 10V,

Momotae
FQPF6N90C
ON Semiconductor

FQPF6N90C

Wahanga Tapeke: 38837

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 Ohm @ 3A, 10V,

Momotae
FCH170N60
ON Semiconductor

FCH170N60

Wahanga Tapeke: 19339

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 22A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 170 mOhm @ 11A, 10V,

Momotae
FDA28N50F
ON Semiconductor

FDA28N50F

Wahanga Tapeke: 15995

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 28A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 14A, 10V,

Momotae
FQA160N08
ON Semiconductor

FQA160N08

Wahanga Tapeke: 14813

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 160A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V,

Momotae