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Transistors - FETs, MOSFETs - Kotahi

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  • Transistors - FETs, MOSFETs - Kotahi
FDB2710
ON Semiconductor

FDB2710

Wahanga Tapeke: 21533

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 50A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V,

Momotae
FDP3672
ON Semiconductor

FDP3672

Wahanga Tapeke: 34753

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 105V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.9A (Ta), 41A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 41A, 10V,

Momotae
FQP6N90C
ON Semiconductor

FQP6N90C

Wahanga Tapeke: 41686

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.3 Ohm @ 3A, 10V,

Momotae
NTD4808N-1G
ON Semiconductor

NTD4808N-1G

Wahanga Tapeke: 139308

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A (Ta), 63A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 11.5V, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V,

Momotae
FDPF51N25RDTU
ON Semiconductor

FDPF51N25RDTU

Wahanga Tapeke: 35196

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 51A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V,

Momotae
NTHL110N65S3F
ON Semiconductor

NTHL110N65S3F

Wahanga Tapeke: 2637

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 30A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 15A, 10V,

Momotae
FCH125N65S3R0-F155
ON Semiconductor

FCH125N65S3R0-F155

Wahanga Tapeke: 2836

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 24A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 125 mOhm @ 12A, 10V,

Momotae
FCH104N60F
ON Semiconductor

FCH104N60F

Wahanga Tapeke: 11414

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 37A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 104 mOhm @ 18.5A, 10V,

Momotae
FCH072N60F
ON Semiconductor

FCH072N60F

Wahanga Tapeke: 9769

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 52A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 72 mOhm @ 26A, 10V,

Momotae
FDB390N15A
ON Semiconductor

FDB390N15A

Wahanga Tapeke: 76673

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 27A, 10V,

Momotae
FDB024N06
ON Semiconductor

FDB024N06

Wahanga Tapeke: 27613

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V,

Momotae
FDA032N08
ON Semiconductor

FDA032N08

Wahanga Tapeke: 14825

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 75V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 120A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 3.2 mOhm @ 75A, 10V,

Momotae
HUF75345G3
ON Semiconductor

HUF75345G3

Wahanga Tapeke: 16907

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 75A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V,

Momotae
FQA13N80-F109
ON Semiconductor

FQA13N80-F109

Wahanga Tapeke: 2894

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12.6A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 750 mOhm @ 6.3A, 10V,

Momotae
FDB0165N807L
ON Semiconductor

FDB0165N807L

Wahanga Tapeke: 20598

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 310A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.6 mOhm @ 36A, 10V,

Momotae
FQA7N80C-F109
ON Semiconductor

FQA7N80C-F109

Wahanga Tapeke: 2819

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 800V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.9 Ohm @ 3.5A, 10V,

Momotae
FCH040N65S3-F155
ON Semiconductor

FCH040N65S3-F155

Wahanga Tapeke: 1507

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 65A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 32.5A, 10V,

Momotae
FCP165N65S3
ON Semiconductor

FCP165N65S3

Wahanga Tapeke: 3662

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 650V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 19A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 165 mOhm @ 9.5A, 10V,

Momotae
FCP600N60Z
ON Semiconductor

FCP600N60Z

Wahanga Tapeke: 4255

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 600 mOhm @ 3.7A, 10V,

Momotae
FDA50N50
ON Semiconductor

FDA50N50

Wahanga Tapeke: 11843

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 500V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 48A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V,

Momotae
FCP20N60
ON Semiconductor

FCP20N60

Wahanga Tapeke: 10175

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V,

Momotae
FDPF7N60NZ
ON Semiconductor

FDPF7N60NZ

Wahanga Tapeke: 55956

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.25 Ohm @ 3.25A, 10V,

Momotae
FCA20N60F
ON Semiconductor

FCA20N60F

Wahanga Tapeke: 10392

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V,

Momotae
FDB8860
ON Semiconductor

FDB8860

Wahanga Tapeke: 44713

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V,

Momotae
FQA11N90-F109
ON Semiconductor

FQA11N90-F109

Wahanga Tapeke: 2876

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11.4A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 960 mOhm @ 5.7A, 10V,

Momotae
FDB2552-F085
ON Semiconductor

FDB2552-F085

Wahanga Tapeke: 4307

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A (Ta), 37A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 36 mOhm @ 16A, 10V,

Momotae
FQA8N90C-F109
ON Semiconductor

FQA8N90C-F109

Wahanga Tapeke: 3836

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 900V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.9 Ohm @ 4A, 10V,

Momotae
FDP2572
ON Semiconductor

FDP2572

Wahanga Tapeke: 34634

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 150V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Ta), 29A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 6V, 10V, Rds Kei (Max) @ Id, Vgs: 54 mOhm @ 9A, 10V,

Momotae
FQP27N25
ON Semiconductor

FQP27N25

Wahanga Tapeke: 33145

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 250V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 25.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 110 mOhm @ 12.75A, 10V,

Momotae
FQP44N10
ON Semiconductor

FQP44N10

Wahanga Tapeke: 39643

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 43.5A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 39 mOhm @ 21.75A, 10V,

Momotae
FCP190N60
ON Semiconductor

FCP190N60

Wahanga Tapeke: 18330

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 20.2A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 199 mOhm @ 10A, 10V,

Momotae
FQPF85N06
ON Semiconductor

FQPF85N06

Wahanga Tapeke: 22909

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 53A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 10 mOhm @ 26.5A, 10V,

Momotae
HUF75639P3-F102
ON Semiconductor

HUF75639P3-F102

Wahanga Tapeke: 4311

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 56A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V,

Momotae
FQA170N06
ON Semiconductor

FQA170N06

Wahanga Tapeke: 8959

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 170A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 85A, 10V,

Momotae
FDB9406L-F085
ON Semiconductor

FDB9406L-F085

Wahanga Tapeke: 4266

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 4.5V, 10V, Rds Kei (Max) @ Id, Vgs: 1.5 mOhm @ 80A, 10V,

Momotae
FDB9406-F085
ON Semiconductor

FDB9406-F085

Wahanga Tapeke: 4251

Momo FET: N-Channel, Hangarau: MOSFET (Metal Oxide), Tohaina ki te Hiko Puna (Vdss): 40V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 110A (Tc), Ngaohiko Puku (Max Rds Kei, Min Rds Kei): 10V, Rds Kei (Max) @ Id, Vgs: 1.8 mOhm @ 80A, 10V,

Momotae