Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

Kāinga
Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

Infineon Technologies

BCR 162F E6327

Wahanga Tapeke: 1848

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Momotae

BCR158WE6327HTSA1

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BCR158WE6327HTSA1

Wahanga Tapeke: 1840

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 162 B6327

Wahanga Tapeke: 1887

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 158T E6327

Wahanga Tapeke: 1908

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR 158L3 E6327

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BCR 158L3 E6327

Wahanga Tapeke: 1838

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 158 B6327

Wahanga Tapeke: 1880

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 158F E6327

Wahanga Tapeke: 1870

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 153T E6327

Wahanga Tapeke: 1846

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Momotae

BCR 153L3 E6327

Infineon Technologies

BCR 153L3 E6327

Wahanga Tapeke: 1899

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Momotae

Infineon Technologies

BCR 153F E6327

Wahanga Tapeke: 1847

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V,

Momotae

BCR 151L3 E6327

Infineon Technologies

BCR 151L3 E6327

Wahanga Tapeke: 1890

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 151T E6327

Wahanga Tapeke: 1855

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 151F E6327

Wahanga Tapeke: 1827

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 149T E6327

Wahanga Tapeke: 1902

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

BCR 149L3 E6327

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BCR 149L3 E6327

Wahanga Tapeke: 1877

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 149F E6327

Wahanga Tapeke: 3262

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 148T E6327

Wahanga Tapeke: 1882

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR148WE6327BTSA1

Infineon Technologies

BCR148WE6327BTSA1

Wahanga Tapeke: 1902

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 148F E6327

Wahanga Tapeke: 3260

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR 148L3 E6327

Infineon Technologies

BCR 148L3 E6327

Wahanga Tapeke: 1913

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 148F B6327

Wahanga Tapeke: 1865

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 148 B6327

Wahanga Tapeke: 1911

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 146T E6327

Wahanga Tapeke: 1826

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

BCR 146L3 E6327

Infineon Technologies

BCR 146L3 E6327

Wahanga Tapeke: 3245

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 146F E6327

Wahanga Tapeke: 1912

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

BCR142WE6327HTSA1

Infineon Technologies

BCR142WE6327HTSA1

Wahanga Tapeke: 1824

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR 142L3 E6327

Infineon Technologies

BCR 142L3 E6327

Wahanga Tapeke: 1858

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 142T E6327

Wahanga Tapeke: 1827

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR142B6327HTLA1

Infineon Technologies

BCR142B6327HTLA1

Wahanga Tapeke: 1896

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 142F E6327

Wahanga Tapeke: 1836

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

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BCR 141T E6327

Wahanga Tapeke: 1866

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

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BCR 141F E6327

Wahanga Tapeke: 1842

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

BCR 141L3 E6327

Infineon Technologies

BCR 141L3 E6327

Wahanga Tapeke: 1865

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 139T E6327

Wahanga Tapeke: 1828

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

BCR 139L3 E6327

Infineon Technologies

BCR 139L3 E6327

Wahanga Tapeke: 1852

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 139F E6327

Wahanga Tapeke: 1851

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

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