Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

Kāinga
Transistors - Bipolar (BJT) - Takitahi, Mua-rawe

Infineon Technologies

BCR 135F E6327

Wahanga Tapeke: 2128

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR158E6327HTSA1

Infineon Technologies

BCR158E6327HTSA1

Wahanga Tapeke: 111325

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR562E6327HTSA1

Infineon Technologies

BCR562E6327HTSA1

Wahanga Tapeke: 174692

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

Momotae

BCR198E6393HTSA1

Infineon Technologies

BCR198E6393HTSA1

Wahanga Tapeke: 2061

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 519 E6327

Wahanga Tapeke: 2048

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V,

Momotae

Infineon Technologies

BCR 198T E6327

Wahanga Tapeke: 2013

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR166WE6327HTSA1

Infineon Technologies

BCR166WE6327HTSA1

Wahanga Tapeke: 2057

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR 162L3 E6327

Infineon Technologies

BCR 162L3 E6327

Wahanga Tapeke: 2049

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V,

Momotae

BCR141WE6327HTSA1

Infineon Technologies

BCR141WE6327HTSA1

Wahanga Tapeke: 2073

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 119 E6433

Wahanga Tapeke: 2021

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 129F E6327

Wahanga Tapeke: 2023

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 133F B6327

Wahanga Tapeke: 1978

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Momotae

BCR108WE6327BTSA1

Infineon Technologies

BCR108WE6327BTSA1

Wahanga Tapeke: 2069

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 101T E6327

Wahanga Tapeke: 1992

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 50mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 100 kOhms, Resistor - Papa Emitter (R2): 100 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR505E6778HTSA1

Infineon Technologies

BCR505E6778HTSA1

Wahanga Tapeke: 5409

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V,

Momotae

BCR503E6393HTSA1

Infineon Technologies

BCR503E6393HTSA1

Wahanga Tapeke: 1955

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

Momotae

BCR183E6359HTMA1

Infineon Technologies

BCR183E6359HTMA1

Wahanga Tapeke: 1981

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Momotae

BCR192E6785HTSA1

Infineon Technologies

BCR192E6785HTSA1

Wahanga Tapeke: 1986

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 22 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR148E6393HTSA1

Infineon Technologies

BCR148E6393HTSA1

Wahanga Tapeke: 2004

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR135E6359HTMA1

Infineon Technologies

BCR135E6359HTMA1

Wahanga Tapeke: 1907

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR133E6393HTSA1

Infineon Technologies

BCR133E6393HTSA1

Wahanga Tapeke: 3211

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 10 kOhms, Resistor - Papa Emitter (R2): 10 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 148W H6433

Wahanga Tapeke: 1910

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 569 E6327

Wahanga Tapeke: 1861

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V,

Momotae

Infineon Technologies

BCR 512 B6327

Wahanga Tapeke: 1858

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 4.7 kOhms, Resistor - Papa Emitter (R2): 4.7 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V,

Momotae

Infineon Technologies

BCR 199T E6327

Wahanga Tapeke: 1876

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 503 B6327

Wahanga Tapeke: 1882

Momo Transistor: NPN - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 500mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 2.2 kOhms, Resistor - Papa Emitter (R2): 2.2 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V,

Momotae

Infineon Technologies

BCR 199F E6327

Wahanga Tapeke: 1910

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

BCR 199L3 E6327

Infineon Technologies

BCR 199L3 E6327

Wahanga Tapeke: 1899

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V,

Momotae

BCR198WE6327BTSA1

Infineon Technologies

BCR198WE6327BTSA1

Wahanga Tapeke: 1924

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 198F E6327

Wahanga Tapeke: 1931

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR 198L3 E6327

Infineon Technologies

BCR 198L3 E6327

Wahanga Tapeke: 1885

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

BCR196WE6327HTSA1

Infineon Technologies

BCR196WE6327HTSA1

Wahanga Tapeke: 1922

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

BCR198B6327HTLA1

Infineon Technologies

BCR198B6327HTLA1

Wahanga Tapeke: 1860

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 100mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 47 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 196T E6327

Wahanga Tapeke: 1855

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

Infineon Technologies

BCR 196F E6327

Wahanga Tapeke: 1930

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

BCR 196L3 E6327

Infineon Technologies

BCR 196L3 E6327

Wahanga Tapeke: 1883

Momo Transistor: PNP - Pre-Biased, Onāianei - Kohikohi (Ic) (Max): 70mA, Ngaohiko - Kohinga Kaituku Pakaru (Max): 50V, Resistor - Papa (R1): 47 kOhms, Resistor - Papa Emitter (R2): 22 kOhms, DC Whiwhi Onaianei (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V,

Momotae

206

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