Transistors - FETs, MOSFETs - Huinga

FDD3510H

Wahanga Tapeke: 147680

Momo FET: N and P-Channel, Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, 2.8A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

FDS6900AS

Wahanga Tapeke: 159056

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.9A, 8.2A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

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FDS6898A

Wahanga Tapeke: 128074

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.4A, Rds Kei (Max) @ Id, Vgs: 14 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

FDMB3900AN

Wahanga Tapeke: 118545

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

FDS6875

Wahanga Tapeke: 133470

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 30 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

MCH6663-TL-W

Wahanga Tapeke: 154760

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.8A, 1.5A, Rds Kei (Max) @ Id, Vgs: 188 mOhm @ 900mA, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Ki te hiahia

FDS6912A

Wahanga Tapeke: 171009

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6A, Rds Kei (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

FDMD86100

Wahanga Tapeke: 131

Momo FET: 2 N-Channel (Dual) Common Source, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 100V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia

NTLLD4951NFTWG

Wahanga Tapeke: 61646

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 6.3A, Rds Kei (Max) @ Id, Vgs: 17.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Ki te hiahia

US6K2TR

Wahanga Tapeke: 124293

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.4A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

EM6K33T2R

Wahanga Tapeke: 182538

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 1.2V Drive, Tohaina ki te Hiko Puna (Vdss): 50V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 200mA, Rds Kei (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Ki te hiahia

SP8M4FRATB

Wahanga Tapeke: 91

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9A (Ta), 7A (Ta), Rds Kei (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

SP8K31FRATB

Wahanga Tapeke: 99

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.5A (Ta), Rds Kei (Max) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia

DMN6070SSD-13

Wahanga Tapeke: 104685

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.3A, Rds Kei (Max) @ Id, Vgs: 80 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

DMTH6016LSD-13

Wahanga Tapeke: 190248

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7.6A (Ta), Rds Kei (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

DMN2028UFDH-7

Wahanga Tapeke: 132521

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.8A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

DMG4822SSD-13

Wahanga Tapeke: 199433

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 20 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

DMG6898LSD-13

Wahanga Tapeke: 109166

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.5A, Rds Kei (Max) @ Id, Vgs: 16 mOhm @ 9.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

DMC6040SSD-13

Wahanga Tapeke: 146822

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.1A, 3.1A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

ZXMHC6A07N8TC

Wahanga Tapeke: 158542

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.39A, 1.28A, Rds Kei (Max) @ Id, Vgs: 250 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

DMG6301UDW-7

Wahanga Tapeke: 168789

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 240mA, Rds Kei (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Ki te hiahia

DMC3016LDV-13

Wahanga Tapeke: 172087

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 21A (Tc), 15A (Tc), Rds Kei (Max) @ Id, Vgs: 12 mOhm @ 7A, 10V, 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia

DMC2990UDJQ-7

Wahanga Tapeke: 147861

Momo FET: N and P-Channel Complementary, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 450mA (Ta), 310mA (Ta), Rds Kei (Max) @ Id, Vgs: 990 mOhm @ 100mA, 4.5V, 1.9 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

Monolithic Power Systems Inc.

DMNH6042SSD-13

Wahanga Tapeke: 182552

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 16.7A (Tc), Rds Kei (Max) @ Id, Vgs: 50 mOhm @ 5.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

Microchip Technology

TC6321T-V/9U

Wahanga Tapeke: 64633

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2A (Ta), Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, 8 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA, 2.4V @ 1mA,

Ki te hiahia

LN60A01ES-LF

Wahanga Tapeke: 77637

Momo FET: 3 N-Channel, Common Gate, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80mA, Rds Kei (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia

SI7923DN-T1-E3

Wahanga Tapeke: 101885

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SI5902BDC-T1-E3

Wahanga Tapeke: 125159

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A (Tc), Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia

SI5908DC-T1-GE3

Wahanga Tapeke: 118967

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.4A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia

SIZ904DT-T1-GE3

Wahanga Tapeke: 140725

Momo FET: 2 N-Channel (Half Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 16A, Rds Kei (Max) @ Id, Vgs: 24 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Ki te hiahia

SI7923DN-T1-GE3

Wahanga Tapeke: 101842

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 47 mOhm @ 6.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia