Transistors - FETs, MOSFETs - Huinga

IRF7342PBF

IRF7342PBF

Wahanga Tapeke: 59591

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 55V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.4A, Rds Kei (Max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SP8K32FRATB

SP8K32FRATB

Wahanga Tapeke: 80

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A (Ta), Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
HP8S36TB

HP8S36TB

Wahanga Tapeke: 130641

Momo FET: 2 N-Channel (Half Bridge), Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 27A, 80A, Rds Kei (Max) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
US6K1TR

US6K1TR

Wahanga Tapeke: 126806

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia
US6M2GTR

US6M2GTR

Wahanga Tapeke: 127

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.5A, 1A, Rds Kei (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA,

Ki te hiahia
HS8K11TB

HS8K11TB

Wahanga Tapeke: 188805

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, 11A, Rds Kei (Max) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Ki te hiahia
TT8K2TR

TT8K2TR

Wahanga Tapeke: 164928

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia
TT8M2TR

TT8M2TR

Wahanga Tapeke: 126279

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 2.5A, Rds Kei (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Ki te hiahia
FC8J33040L

FC8J33040L

Wahanga Tapeke: 178049

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 33V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 38 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 260µA,

Ki te hiahia
ZXMN2088DE6TA

ZXMN2088DE6TA

Wahanga Tapeke: 158779

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 1.7A, Rds Kei (Max) @ Id, Vgs: 200 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
DMC3025LDV-7

DMC3025LDV-7

Wahanga Tapeke: 189831

Momo FET: N and P-Channel, Āhuahira FET: Standard, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A (Tc), Rds Kei (Max) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Ki te hiahia
DMHC6070LSD-13

DMHC6070LSD-13

Wahanga Tapeke: 158503

Momo FET: 2 N and 2 P-Channel (H-Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, 2.4A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
DMC3021LSDQ-13

DMC3021LSDQ-13

Wahanga Tapeke: 112926

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8.5A, 7A, Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Ki te hiahia
DMC3028LSDX-13

DMC3028LSDX-13

Wahanga Tapeke: 179812

Momo FET: N and P-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.5A, 5.8A, Rds Kei (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
ZXMN6A09DN8TA

ZXMN6A09DN8TA

Wahanga Tapeke: 63423

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.3A, Rds Kei (Max) @ Id, Vgs: 40 mOhm @ 8.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
ECH8695R-TL-W

ECH8695R-TL-W

Wahanga Tapeke: 130870

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, 2.5V Drive, Tohaina ki te Hiko Puna (Vdss): 24V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 11A, Rds Kei (Max) @ Id, Vgs: 9.1 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Ki te hiahia
FDMS3606S

FDMS3606S

Wahanga Tapeke: 103403

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 13A, 27A, Rds Kei (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Ki te hiahia
FW297-TL-2W

FW297-TL-2W

Wahanga Tapeke: 151817

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, 4V Drive, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.5A, Rds Kei (Max) @ Id, Vgs: 58 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

Ki te hiahia
FDMS3602AS

FDMS3602AS

Wahanga Tapeke: 95320

Momo FET: 2 N-Channel (Dual) Asymmetrical, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 25V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 15A, 26A, Rds Kei (Max) @ Id, Vgs: 5.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
FDMC7208S

FDMC7208S

Wahanga Tapeke: 116029

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 16A, Rds Kei (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
FDMS7600AS

FDMS7600AS

Wahanga Tapeke: 69548

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 12A, 22A, Rds Kei (Max) @ Id, Vgs: 7.5 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
FDMD8680

FDMD8680

Wahanga Tapeke: 74712

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 80V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 66A (Tc), Rds Kei (Max) @ Id, Vgs: 4.7 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Ki te hiahia
NVMD6P02R2G

NVMD6P02R2G

Wahanga Tapeke: 115513

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4.8A, Rds Kei (Max) @ Id, Vgs: 33 mOhm @ 6.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia
FDMQ86530L

FDMQ86530L

Wahanga Tapeke: 57140

Momo FET: 4 N-Channel (H-Bridge), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 8A, Rds Kei (Max) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI4532DY

SI4532DY

Wahanga Tapeke: 183986

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.9A, 3.5A, Rds Kei (Max) @ Id, Vgs: 65 mOhm @ 3.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
NTLUD4C26NTAG

NTLUD4C26NTAG

Wahanga Tapeke: 108

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 9.1A (Ta), Rds Kei (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Ki te hiahia
SI4943BDY-T1-GE3

SI4943BDY-T1-GE3

Wahanga Tapeke: 73684

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 6.3A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Ki te hiahia
SI6954ADQ-T1-E3

SI6954ADQ-T1-E3

Wahanga Tapeke: 197681

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 3.1A, Rds Kei (Max) @ Id, Vgs: 53 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Ki te hiahia
SI8900EDB-T2-E1

SI8900EDB-T2-E1

Wahanga Tapeke: 45537

Momo FET: 2 N-Channel (Dual) Common Drain, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5.4A, Vgs (th) (Max) @ Id: 1V @ 1.1mA,

Ki te hiahia
SI7913DN-T1-GE3

SI7913DN-T1-GE3

Wahanga Tapeke: 93108

Momo FET: 2 P-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 20V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 5A, Rds Kei (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
SLA5068 LF853

SLA5068 LF853

Wahanga Tapeke: 10734

Momo FET: 6 N-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 7A, Rds Kei (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia
SLA5041

SLA5041

Wahanga Tapeke: 12982

Momo FET: 4 N-Channel, Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 200V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 175 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Ki te hiahia
SMA5127

SMA5127

Wahanga Tapeke: 33740

Momo FET: 3 N and 3 P-Channel (3-Phase Bridge), Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 60V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 4A, Rds Kei (Max) @ Id, Vgs: 550 Ohm @ 2A, 4V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Ki te hiahia
STS8DN3LLH5

STS8DN3LLH5

Wahanga Tapeke: 113246

Momo FET: 2 N-Channel (Dual), Āhuahira FET: Logic Level Gate, Tohaina ki te Hiko Puna (Vdss): 30V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 10A, Rds Kei (Max) @ Id, Vgs: 19 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Ki te hiahia
TC2320TG-G

TC2320TG-G

Wahanga Tapeke: 63061

Momo FET: N and P-Channel, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 200V, Rds Kei (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Ki te hiahia
LN60A01ES-LF-Z

LN60A01ES-LF-Z

Wahanga Tapeke: 135897

Momo FET: 3 N-Channel, Common Gate, Āhuahira FET: Standard, Tohaina ki te Hiko Puna (Vdss): 600V, I Nei - Te Tuku Tonu (Id) @ 25 ° C: 80mA, Rds Kei (Max) @ Id, Vgs: 190 Ohm @ 10mA, 10V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Ki te hiahia